loadpatents
name:-0.017683982849121
name:-0.016520977020264
name:-0.0013191699981689
Kim; Byong Man Patent Filings

Kim; Byong Man

Patent Applications and Registrations

Patent applications and USPTO patent grants for Kim; Byong Man.The latest application filed is for "method and media for improving ferroelectric domain stability in an information storage device".

Company Profile
0.13.14
  • Kim; Byong Man - East Brunswick NJ
  • Kim; Byong Man - Fremont CA
  • Kim; Byong-man - Gunpo KR
  • Kim; Byong-man - Gunpo-city KR
  • Kim; Byong-man - Gupo KR
  • Kim; Byong-man - Kyungki-do KR
  • Kim, Byong-man - Kunpo-city KR
  • Kim, Byong-man - Gupo-city KR
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Nanotube-based sensors and probes
Grant 7,964,159 - Bau , et al. June 21, 2
2011-06-21
Method and media for improving ferroelectric domain stability in an information storage device
Grant 7,626,846 - Rao , et al. December 1, 2
2009-12-01
Method And Media For Improving Ferroelectric Domain Stability In An Information Storage Device
App 20090021975 - Rao; Valluri Ramana ;   et al.
2009-01-22
Methods Of Treating A Surface Of A Ferroelectric Media
App 20080316897 - KIM; Byong Man ;   et al.
2008-12-25
Surface-treated Ferroelectric Media For Use In Systems For Storing Information
App 20080318086 - Kim; Byong Man ;   et al.
2008-12-25
Method of manufacturing a memory device
Grant 7,407,856 - Yoo , et al. August 5, 2
2008-08-05
Method And System For Writing And Reading A Charge-trap Media With A Probe Tip
App 20080174918 - Kim; Byong Man
2008-07-24
Nanotube-based sensors and probes
App 20070009379 - Bau; Haim H. ;   et al.
2007-01-11
Memory device comprising single transistor having functions of RAM and ROM and methods for operating and manufacturing the same
App 20060086966 - Yoo; In-kyeong ;   et al.
2006-04-27
Rewritable data storage using carbonaceous material and writing/reading method thereof
Grant 7,020,064 - Kim , et al. March 28, 2
2006-03-28
Memory device comprising single transistor having functions of RAM and ROM and methods for operating and manufacturing the same
Grant 6,999,346 - Yoo , et al. February 14, 2
2006-02-14
Method for manufacturing a single electron memory device having quantum dots between gate electrode and single electron storage element
Grant 6,946,346 - Chae , et al. September 20, 2
2005-09-20
Memory device including a transistor having functions of RAM and ROM
Grant 6,867,999 - Yoo , et al. March 15, 2
2005-03-15
Nanotube transistor device
App 20050051805 - Kim, Byong Man ;   et al.
2005-03-10
Memory device comprising single transistor having functions of RAM and ROM and methods for operating and manufacturing the same
App 20040160816 - Yoo, In-kyeong ;   et al.
2004-08-19
Memory device comprising single transistor having functions of RAM and ROM and methods for operating and manufacturing the same
App 20040155283 - Yoo, In-kyeong ;   et al.
2004-08-12
Memory device comprising single transistor having functions of RAM and ROM and methods for operating and manufacturing the same
Grant 6,740,925 - Yoo , et al. May 25, 2
2004-05-25
Single electron memory device comprising quantum dots between gate electrode and single electron storage element and method for manufacturing the same
App 20040076032 - Chae, Soo-Doo ;   et al.
2004-04-22
High-density information storage apparatus using electron emission and methods of writing, reading and erasing information using the same
Grant 6,687,210 - Yoo , et al. February 3, 2
2004-02-03
Single electron memory device comprising quantum dots between gate electrode and single electron storage element and method for manufacturing the same
Grant 6,670,670 - Chae , et al. December 30, 2
2003-12-30
Method for etching metal layer on a scale of nanometers
Grant 6,664,123 - Kim , et al. December 16, 2
2003-12-16
Multi-value single electron memory using double-quantum dot and driving method thereof
Grant 6,597,036 - Lee , et al. July 22, 2
2003-07-22
High-density information storage apparatus using electron emission and methods of writing, reading and erasing information using the same
App 20030053399 - Yoo, In-kyeong ;   et al.
2003-03-20
Single electron transistor using porous silicon and manufacturing method thereof
App 20020088969 - Lee, Jo-won ;   et al.
2002-07-11
Memory device comprising single transistor having functions of RAM and ROM and methods for operating and manufacturing the same
App 20020088996 - Yoo, In-kyeong ;   et al.
2002-07-11
Rewritable data storage using carbonaceous material and writing/reading method thereof
App 20020009632 - Kim, Byong-man ;   et al.
2002-01-24
Fabrication method of single electron tunneling device
Grant 6,268,273 - Kim , et al. July 31, 2
2001-07-31

uspto.report is an independent third-party trademark research tool that is not affiliated, endorsed, or sponsored by the United States Patent and Trademark Office (USPTO) or any other governmental organization. The information provided by uspto.report is based on publicly available data at the time of writing and is intended for informational purposes only.

While we strive to provide accurate and up-to-date information, we do not guarantee the accuracy, completeness, reliability, or suitability of the information displayed on this site. The use of this site is at your own risk. Any reliance you place on such information is therefore strictly at your own risk.

All official trademark data, including owner information, should be verified by visiting the official USPTO website at www.uspto.gov. This site is not intended to replace professional legal advice and should not be used as a substitute for consulting with a legal professional who is knowledgeable about trademark law.

© 2024 USPTO.report | Privacy Policy | Resources | RSS Feed of Trademarks | Trademark Filings Twitter Feed