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Semiconductor contact formation
Grant 11,393,688 - Imonigie , et al. July 19, 2 | 2022-07-19 |
Semiconductor structure formation
Grant 11,387,369 - Hu , et al. July 12, 2 | 2022-07-12 |
Vertical Transistors
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Vertical Transistor, Integrated Circuitry, Method Of Forming A Vertical Transistor, And Method Of Forming Integrated Circuitry
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Vertical Transistor, Integrated Circuitry, Method Of Forming A Vertical Transistor, And Method Of Forming Integrated Circuitry
App 20220093617 - Liu; Hung-Wei ; et al. | 2022-03-24 |
Vertical transistor, integrated circuitry, method of forming a vertical transistor, and method of forming integrated circuitry
Grant 11,264,395 - Liu , et al. March 1, 2 | 2022-03-01 |
Semiconductor Contact Formation
App 20220045195 - Imonigie; Jerome A. ; et al. | 2022-02-10 |
Methods Of Forming An Array Of Elevationally-Extending Strings Of Memory Cells, Methods Of Forming Polysilicon, Elevationally-Extending Strings Of Memory Cells Individually Comprising A Programmable Charge Storage Transistor, And Electronic Components Comprising Polysilicon
App 20210351197 - Pavlopoulos; Dimitrios ; et al. | 2021-11-11 |
Transistor And Methods Of Forming Integrated Circuitry
App 20210265502 - Liu; Hung-Wei ; et al. | 2021-08-26 |
Arrays Of Elevationally-Extending Strings Of Memory Cells And Methods Used In Forming An Array Of Elevationally-Extending Strings Of Memory Cells
App 20210265171 - Hopkins; John D. ; et al. | 2021-08-26 |
Methods of forming an array of elevationally-extending strings of memory cells, methods of forming polysilicon, elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor, and electronic components comprising polysilicon
Grant 11,094,705 - Pavlopoulos , et al. August 17, 2 | 2021-08-17 |
Semiconductor Structure Formation
App 20210193843 - Hu; Shen ; et al. | 2021-06-24 |
Arrays of elevationally-extending strings of memory cells and methods used in forming an array of elevationally-extending strings of memory cells
Grant 11,037,797 - Hopkins , et al. June 15, 2 | 2021-06-15 |
Transistor and methods of forming integrated circuitry
Grant 11,024,736 - Liu , et al. June 1, 2 | 2021-06-01 |
Transistors and arrays of elevationally-extending strings of memory cells
Grant 11,011,538 - Wells , et al. May 18, 2 | 2021-05-18 |
Semiconductor Structure Formation
App 20210143011 - Tapias; Nicholas R. ; et al. | 2021-05-13 |
Methods of forming a channel region of a transistor and methods used in forming a memory array
Grant 10,971,360 - Wells , et al. April 6, 2 | 2021-04-06 |
Semiconductor structure formation
Grant 10,930,499 - Tapias , et al. February 23, 2 | 2021-02-23 |
Integrated Assemblies Having Rugged Material Fill, and Methods of Forming Integrated Assemblies
App 20210050364 - Tapias; Nicholas R. ; et al. | 2021-02-18 |
Transistor And Methods Of Forming Integrated Circuitry
App 20210043769 - Liu; Hung-Wei ; et al. | 2021-02-11 |
Semiconductor Formation Using Hybrid Oxidation
App 20200365596 - Mukherjee; Somik ; et al. | 2020-11-19 |
Semiconductor Structure Formation
App 20200328080 - Tapias; Nicholas R. ; et al. | 2020-10-15 |
Programmable charge storage transistor, an array of elevationally-extending strings of memory cells, methods of forming Si3Nx, methods of forming insulator material that is between a control gate and charge-storage material of a programmable charge-storage
Grant 10,749,041 - Wang , et al. A | 2020-08-18 |
Arrays Of Elevationally-Extending Strings Of Memory Cells And Methods Used In Forming An Array Of Elevationally-Extending String
App 20200251347 - Kind Code | 2020-08-06 |
Arrays of elevationally-extending strings of memory cells and methods used in forming an array of elevationally-extending strings of memory cells
Grant 10,665,469 - Hopkins , et al. | 2020-05-26 |
Integrated structures and methods of forming vertically-stacked memory cells
Grant 10,665,599 - Zhu , et al. | 2020-05-26 |
Elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor and methods of processing silicon nitride-comprising materials
Grant 10,615,174 - Wang , et al. | 2020-04-07 |
Arrays Of Elevationally-Extending Strings Of Memory Cells And Methods Used In Forming An Array Of Elevationally-Extending String
App 20200083059 - Hopkins; John D. ; et al. | 2020-03-12 |
Arrays of elevationally-extending strings of memory cells having a stack comprising vertically-alternating insulative tiers and wordline tiers and horizontally-elongated trenches in the stacks
Grant 10,586,807 - Xie , et al. | 2020-03-10 |
Method Of Forming An Array Of Elevationally-Extending Strings Of Programmable Memory Cells And Method Of Forming An Array Of Ele
App 20200066747 - Howder; Collin ; et al. | 2020-02-27 |
Programmable Charge Storage Transistor, an Array of Elevationally-Extending Strings of Memory Cells, Methods of Forming Si3Nx, M
App 20200052134 - Wang; Fei ; et al. | 2020-02-13 |
Methods of forming a channel region of a transistor and methods used in forming a memory array
Grant 10,559,466 - Wells , et al. Feb | 2020-02-11 |
Method of forming an array of elevationally-extending strings of programmable memory cells and method of forming an array of elevationally-extending strings of memory cells
Grant 10,553,607 - Howder , et al. Fe | 2020-02-04 |
Methods Of Forming A Channel Region Of A Transistor And Methods Used In Forming A Memory Array
App 20200020529 - Wells; David H. ; et al. | 2020-01-16 |
Arrays Of Elevationally-Extending Strings Of Memory Cells Having A Stack Comprising Vertically-Alternating Insulative Tiers and
App 20190371815 - Xie; Zhiqiang ; et al. | 2019-12-05 |
Methods of forming si.sub.3n.sub.X, methods of forming insulator material between a control gate and charge-storage material of a programmable charge-storage transistor, and methods of forming an array of elevationally-extending strings of memory cells and
Grant 10,483,407 - Wang , et al. Nov | 2019-11-19 |
Methods Of Forming An Array Of Elevationally-Extending Strings Of Memory Cells, Methods Of Forming Polysilicon, Elevationally-Ex
App 20190341398 - Pavlopoulos; Dimitrios ; et al. | 2019-11-07 |
Programmable Charge Storage Transistor, An Array Of Elevationally-Extending Strings Of Memory Cells, Methods Of Forming Si3Nx, M
App 20190326445 - Wang; Fei ; et al. | 2019-10-24 |
Methods used in forming an array of elevationally-extending strings of memory cells, methods of forming an array of elevationally-extending strings of memory cells, and methods of forming an array of vertical strings of memory cells
Grant 10,446,578 - Howder , et al. Oc | 2019-10-15 |
Elevationally-Extending Strings Of Memory Cells Individually Comprising A Programmable Charge Storage Transistor And Methods Of
App 20190312056 - Wang; Fei ; et al. | 2019-10-10 |
Transistors And Arrays Of Elevationally-Extending Strings Of Memory Cells
App 20190267394 - Wells; David H. ; et al. | 2019-08-29 |
Methods of forming an array of elevationally-extending strings of memory cells having a stack comprising vertically-alternating insulative tiers and wordline tiers and horizontally-elongated trenches in the stack
Grant 10,388,665 - Xie , et al. A | 2019-08-20 |
Elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor and methods of processing silicon nitride-comprising materials
Grant 10,381,377 - Wang , et al. A | 2019-08-13 |
Methods of forming an array of elevationally-extending strings of memory cells, methods of forming polysilicon, elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor, and electronic components comprising polysilicon
Grant 10,381,367 - Pavlopoulos , et al. A | 2019-08-13 |
Integrated Structures and Methods of Forming Vertically-Stacked Memory Cells
App 20190229126 - Zhu; Hongbin ; et al. | 2019-07-25 |
Methods Of Forming A Channel Region Of A Transistor And Methods Used In Forming A Memory Array
App 20190198320 - Wells; David H. ; et al. | 2019-06-27 |
Transistors and arrays of elevationally-extending strings of memory cells
Grant 10,297,611 - Wells , et al. | 2019-05-21 |
Integrated structures and methods of forming vertically-stacked memory cells
Grant 10,269,819 - Zhu , et al. | 2019-04-23 |
Elevationally-Extending Strings Of Memory Cells Individually Comprising A Programmable Charge Storage Transistor And Methods Of Processing Silicon Nitride-Comprising Materials
App 20180331120 - Wang; Fei ; et al. | 2018-11-15 |
Elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor and methods of processing silicon nitride-comprising materials
Grant 10,121,799 - Wang , et al. November 6, 2 | 2018-11-06 |
Methods Of Forming An Array Of Elevationally-Extending Strings Of Memory Cells, Methods Of Forming Polysilicon, Elevationally-Extending Strings Of Memory Cells Individually Comprising A Programmable Charge Storage Transistor, And Electronic Components Comprising Polysilicon
App 20180294275 - Pavlopoulos; Dimitrios ; et al. | 2018-10-11 |
Methods of forming an array of elevationally-extending strings of memory cells, methods of forming polysilicon, elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor, and electronic components comprising polysilicon
Grant 10,014,311 - Pavlopoulos , et al. July 3, 2 | 2018-07-03 |
Elevationally-Extending Strings Of Memory Cells Individually Comprising A Programmable Charge Storage Transistor And Methods Of Processing Silicon Nitride-Comprising Materials
App 20180114795 - Wang; Fei ; et al. | 2018-04-26 |
Methods Of Forming An Array Of Elevationally-Extending Strings Of Memory Cells, Methods Of Forming Polysilicon, Elevationally-Extending Strings Of Memory Cells Individually Comprising A Programmable Charge Storage Transistor, And Electronic Components Comprising Polysilicon
App 20180108670 - Pavlopoulos; Dimitrios ; et al. | 2018-04-19 |
Elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor and methods of processing silicon nitride-comprising materials
Grant 9,893,083 - Wang , et al. February 13, 2 | 2018-02-13 |
Integrated Structures and Methods of Forming Vertically-Stacked Memory Cells
App 20170229470 - Zhu; Hongbin ; et al. | 2017-08-10 |
Integrated structures
Grant 9,659,949 - Zhu , et al. May 23, 2 | 2017-05-23 |
Integrated Structures and Methods of Forming Vertically-Stacked Memory Cells
App 20160284719 - Zhu; Hongbin ; et al. | 2016-09-29 |
Methods of forming semiconductor devices having diffusion regions of reduced width
Grant 8,709,929 - Liu , et al. April 29, 2 | 2014-04-29 |
Methods Of Forming Semiconductor Devices Having Diffusion Regions Of Reduced Width
App 20120329258 - Liu; Lequn ; et al. | 2012-12-27 |
Semiconductor devices and methods of forming semiconductor devices having diffusion regions of reduced width
Grant 8,283,708 - Liu , et al. October 9, 2 | 2012-10-09 |
Semiconductor Devices And Methods Of Forming Semiconductor Devices Having Diffusion Regions Of Reduced Width
App 20110068378 - Liu; Lequn ; et al. | 2011-03-24 |
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