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Patent applications and USPTO patent grants for Khan; Laique.The latest application filed is for "fets having lightly doped drain regions that are shaped with counter and noncounter dorant elements".
Patent | Date |
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FETs having lightly doped drain regions that are shaped with counter and noncounter dorant elements Grant 6,180,470 - Aronowitz , et al. January 30, 2 | 2001-01-30 |
Method of forming retrograde well structures and punch-through barriers using low energy implants Grant 5,963,801 - Aronowitz , et al. October 5, 1 | 1999-10-05 |
Formation of gradient doped profile region between channel region and heavily doped source/drain contact region of MOS device in integrated circuit structure using a re-entrant gate electrode and a higher dose drain implantation Grant 5,877,530 - Aronowitz , et al. March 2, 1 | 1999-03-02 |
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