Keys; Patrick H.
Patent Applications and Registrations
Patent applications and USPTO patent grants for Keys; Patrick H..The latest application filed is for "lateral gate material arrangements for quantum dot devices".
- Keys; Patrick H. - Portland OR
- - Portland OR US
- Keys; Patrick H. - Beaverton OR
| Patent | Date |
|---|---|
| Vertically stacked finFETs and shared gate patterning Grant 11,404,319 - Lilak , et al. August 2, 2 | 2022-08-02 |
| Lateral Gate Material Arrangements For Quantum Dot Devices App 20220190135 - Kotlyar; Roza ; et al. | 2022-06-16 |
| Quantum dot devices with strain control Grant 11,183,564 - Thomas , et al. November 23, 2 | 2021-11-23 |
| Hexagonal arrays for quantum dot devices Grant 11,107,891 - Pillarisetty , et al. August 31, 2 | 2021-08-31 |
| Methods and apparatus to remove epitaxial defects in semiconductors Grant 10,978,590 - Lilak , et al. April 13, 2 | 2021-04-13 |
| Nanowire Structures Having Wrap-around Contacts App 20210036137 - CEA; Stephen M. ; et al. | 2021-02-04 |
| Retrograde transistor doping by heterojunction materials Grant 10,896,907 - Keys , et al. January 19, 2 | 2021-01-19 |
| Nanowire structures having wrap-around contacts Grant 10,840,366 - Cea , et al. November 17, 2 | 2020-11-17 |
| Hexagonal Arrays For Quantum Dot Devices App 20200321436 - Pillarisetty; Ravi ; et al. | 2020-10-08 |
| Stacked channel structures for MOSFETs Grant 10,790,281 - Mehandru , et al. September 29, 2 | 2020-09-29 |
| Vertically Stacked Finfets & Shared Gate Patterning App 20200235013 - Lilak; Aaron ; et al. | 2020-07-23 |
| Fin strain in quantum dot devices Grant 10,665,770 - Pillarisetty , et al. | 2020-05-26 |
| Deep EPI enabled by backside reveal for stress enhancement and contact Grant 10,636,907 - Lilak , et al. | 2020-04-28 |
| Nanowire Structures Having Wrap-around Contacts App 20200035818A1 - | 2020-01-30 |
| Nanowire structures having wrap-around contacts Grant 10,483,385 - Cea , et al. Nov | 2019-11-19 |
| Retrograde Transistor Doping By Heterojunction Materials App 20190237466 - KEYS; Patrick H. ; et al. | 2019-08-01 |
| Methods And Apparatus To Remove Epitaxial Defects In Semiconductors App 20190189795 - Lilak; Aaron D. ; et al. | 2019-06-20 |
| Quantum Dot Devices With Strain Control App 20190043951 - Thomas; Nicole K. ; et al. | 2019-02-07 |
| Fin Strain In Quantum Dot Devices App 20190044050 - Pillarisetty; Ravi ; et al. | 2019-02-07 |
| Stacked Channel Structures For Mosfets App 20180323195 - Mehandru; Rishabh ; et al. | 2018-11-08 |
| Deep Epi Enabled By Backside Reveal For Stress Enhancement & Contact App 20180212057 - LILAK; Aaron D. ; et al. | 2018-07-26 |
| Semiconductor device with isolated body portion Grant 10,026,829 - Cappellani , et al. July 17, 2 | 2018-07-17 |
| Carbon-based Interface For Epitaxially Grown Source/drain Transistor Regions App 20180151733 - GLASS; GLENN A. ; et al. | 2018-05-31 |
| Semiconductor Device With Isolated Body Portion App 20170162676 - CAPPELLANI; Annalisa ; et al. | 2017-06-08 |
| Semiconductor device with isolated body portion Grant 9,608,059 - Cappellani , et al. March 28, 2 | 2017-03-28 |
| Nanowire Structures Having Wrap-around Contacts App 20140209855 - Cea; Stephen M. ; et al. | 2014-07-31 |
| Semiconductor Device With Isolated Body Portion App 20130320455 - Cappellani; Annalisa ; et al. | 2013-12-05 |
| Method to reduce junction leakage through partial regrowth with ultrafast anneal and structures formed thereby Grant 7,790,587 - Hwang , et al. September 7, 2 | 2010-09-07 |
| Method to reduce junction leakage through partial regrowth with ultrafast anneal and structures formed thereby App 20080121882 - Hwang; Jack ; et al. | 2008-05-29 |
| Implant and anneal amorphization process App 20070099404 - Govindaraju; Sridhar ; et al. | 2007-05-03 |
| Strained field effect transistors App 20060292776 - Jin; Been-Yih ; et al. | 2006-12-28 |
| Method of forming a shallow junction Grant 6,936,505 - Keys , et al. August 30, 2 | 2005-08-30 |
| Method of forming a shallow junction App 20040235280 - Keys, Patrick H. ; et al. | 2004-11-25 |
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