loadpatents
name:-0.0028979778289795
name:-0.014240980148315
name:-0.00080704689025879
Keswick; Peter R. Patent Filings

Keswick; Peter R.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Keswick; Peter R..The latest application filed is for "processes used in an inductively coupled plasma reactor".

Company Profile
0.10.1
  • Keswick; Peter R. - Newark CA
  • Keswick; Peter R. - Bloomington MN
  • Keswick; Peter R. - Fremont CA
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Plasma reactor using inductive RF coupling, and processes
Grant 6,545,420 - Collins , et al. April 8, 2
2003-04-08
Plasma reactor using inductive RF coupling, and processes
Grant 6,518,195 - Collins , et al. February 11, 2
2003-02-11
Magnetic confinement in a plasma reactor having an RF bias electrode
Grant 6,488,807 - Collins , et al. December 3, 2
2002-12-03
Method for processing substrates using gaseous silicon scavenger
Grant 6,444,137 - Collins , et al. September 3, 2
2002-09-03
High temperature silicon surface providing high selectivity in an oxide etch process
Grant 6,399,514 - Marks , et al. June 4, 2
2002-06-04
Processes Used In An Inductively Coupled Plasma Reactor
App 20020004309 - COLLINS, KENNETH S. ;   et al.
2002-01-10
Plasma etch processes
Grant 6,251,792 - Collins , et al. June 26, 2
2001-06-26
Process used in an RF coupled plasma reactor
Grant 6,068,784 - Collins , et al. May 30, 2
2000-05-30
Plasma reactor and processes using RF inductive coupling and scavenger temperature control
Grant 5,888,414 - Collins , et al. March 30, 1
1999-03-30
Silicon scavenger in an inductively coupled RF plasma reactor
Grant 5,556,501 - Collins , et al. September 17, 1
1996-09-17
Selectivity for etching an oxide over a nitride
Grant 5,423,945 - Marks , et al. June 13, 1
1995-06-13

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