Kern; R. Scott

Patent Applications and Registrations

Patent applications and USPTO patent grants for Kern; R. Scott.The latest application filed is for "formation of ohmic contacts in iii-nitride light emitting devices".

Company Profile

0.13.6

Kern; R. Scott - San Jose CA

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Formation of Ohmic contacts in III-nitride light emitting devices Grant 7,345,323 - Goetz , et al. March 18, 2	2008-03-18
Formation of Ohmic contacts in III-nitride light emitting devices App 20050167693 - Goetz, Werner K. ; et al.	2005-08-04
Formation of Ohmic contacts in III-nitride light emitting devices Grant 6,914,272 - Goetz , et al. July 5, 2	2005-07-05
Formation of Ohmic contacts in III-nitride light emitting devices App 20040075097 - Goetz, Werner K. ; et al.	2004-04-22
Formation of ohmic contacts in III-nitride light emitting devices Grant 6,657,300 - Goetz , et al. December 2, 2	2003-12-02
Indium gallium nitride smoothing structures for III-nitride devices Grant 6,635,904 - Goetz , et al. October 21, 2	2003-10-21
Epitaxial material grown laterally within a trench and method for producing same Grant 6,500,257 - Wang , et al. December 31, 2	2002-12-31
Indium gallium nitride smoothing structures for III-nitride devices Grant 6,489,636 - Goetz , et al. December 3, 2	2002-12-03
Indium Gallium Nitride Smoothing Structures For Iii-nitride Devices App 20020171091 - Goetz, Werner K. ; et al.	2002-11-21
Indium gallium nitride smoothing structures for III-nitride devices App 20020171092 - Goetz, Werner K. ; et al.	2002-11-21
Semiconductor devices with selectively doped III-V nitride layers Grant 6,441,393 - Goetz , et al. August 27, 2	2002-08-27
Methods for fabricating light emitting devices having aluminum gallium indium nitride structures and mirror stacks Grant 6,420,199 - Coman , et al. July 16, 2	2002-07-16
Methods for fabricating light emitting devices having aluminum gallium indium nitride structures and mirror stacks App 20020030198 - Coman, Carrie Carter ; et al.	2002-03-14
Formation of ohmic contacts in III-nitride light emitting devices App 20020008243 - Goetz, Werner K. ; et al.	2002-01-24
Light emitting devices having wafer bonded aluminum gallium indium nitride structures and mirror stacks Grant 6,320,206 - Coman , et al. November 20, 2	2001-11-20
Thickness tailoring of wafer bonded AlxGayInzN structures by laser melting Grant 6,280,523 - Coman , et al. August 28, 2	2001-08-28
Method of strain engineering and impurity control in III-V nitride semiconductor films and optoelectronic devices Grant 6,274,399 - Kern , et al. August 14, 2	2001-08-14
Strain engineered and impurity controlled III-V nitride semiconductor films and optoelectronic devices Grant 6,194,742 - Kern , et al. February 27, 2	2001-02-27
Buried reflectors for light emitters in epitaxial material and method for producing same Grant 6,046,465 - Wang , et al. April 4, 2	2000-04-04

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