| Patent | Date |
|---|
Non-uniform gate dielectric for U-shape MOSFET
Grant 10,957,780 - Kerber , et al. March 23, 2 | 2021-03-23 |
III-V transistor device with self-aligned doped bottom barrier
Grant 10,937,871 - Cheng , et al. March 2, 2 | 2021-03-02 |
Transistor structure with varied gate cross-sectional area
Grant 10,680,085 - Schepis , et al. | 2020-06-09 |
Structure and method for tensile and compressive strained silicon germanium with same germanium concentration by single epitaxy step
Grant 10,643,907 - Kerber , et al. | 2020-05-05 |
Semiconductor device including epitaxially formed buried channel region
Grant 10,374,042 - Deng , et al. | 2019-08-06 |
Non-uniform Gate Dielectric For U-shape Mosfet
App 20190198640 - Kerber; Pranita ; et al. | 2019-06-27 |
Structure And Method For Tensile And Compressive Strained Silicon Germanium With Same Germanium Concentration By Single Epitaxy
App 20190157167 - Kerber; Pranita ; et al. | 2019-05-23 |
High-k gate dielectric and metal gate conductor stack for fin-type field effect transistors formed on type III-V semiconductor material and silicon germanium semiconductor material
Grant 10,262,999 - Ando , et al. | 2019-04-16 |
Non-uniform gate dielectric for U-shape MOSFET
Grant 10,256,319 - Kerber , et al. | 2019-04-09 |
High-K gate dielectric and metal gate conductor stack for fin-type field effect transistors formed on type III-V semiconductor material and silicon germanium semiconductor material
Grant 10,217,745 - Ando , et al. Feb | 2019-02-26 |
Structure and method for tensile and compressive strained silicon germanium with same germanium concentration by single epitaxy step
Grant 10,204,837 - Kerber , et al. Feb | 2019-02-12 |
Metallized junction FinFET structures
Grant 10,192,888 - Doris , et al. Ja | 2019-01-29 |
SiGe FinFET with improved junction doping control
Grant 10,176,990 - Kerber , et al. J | 2019-01-08 |
High-k Gate Dielectric And Metal Gate Conductor Stack For Fin-type Field Effect Transistors Formed On Type Iii-v Semiconductor Material And Silicon Germanium Semiconductor Material
App 20180240799 - Ando; Takashi ; et al. | 2018-08-23 |
Structure And Method For Tensile And Compressive Strained Silicon Germanium With Same Germanium Concentration By Single Epitaxy Step
App 20180233418 - Kerber; Pranita ; et al. | 2018-08-16 |
Transistor Structure With Varied Gate Cross-sectional Area
App 20180190797 - Schepis; Dominic J. ; et al. | 2018-07-05 |
Structure and method for tensile and compressive strained silicon germanium with same germanium concentration by single epitaxy step
Grant 10,002,798 - Kerber , et al. June 19, 2 | 2018-06-19 |
High-K gate dielectric and metal gate conductor stack for fin-type field effect transistors formed on type III-V semiconductor material and silicon germanium semiconductor material
Grant 10,002,871 - Ando , et al. June 19, 2 | 2018-06-19 |
Iii-v Transistor Device With Self-aligned Doped Bottom Barrier
App 20180151674 - Cheng; Cheng-Wei ; et al. | 2018-05-31 |
Reduced resistance short-channel InGaAs planar MOSFET
Grant 9,972,711 - Kerber , et al. May 15, 2 | 2018-05-15 |
Transistor structure with varied gate cross-sectional area
Grant 9,966,457 - Schepis , et al. May 8, 2 | 2018-05-08 |
III-V transistor device with self-aligned doped bottom barrier
Grant 9,941,363 - Cheng , et al. April 10, 2 | 2018-04-10 |
High-k gate dielectric and metal gate conductor stack for fin-type field effect transistors formed on type III-V semiconductor material and silicon germanium semiconductor material
Grant 9,859,279 - Ando , et al. January 2, 2 | 2018-01-02 |
High-k Gate Dielectric And Metal Gate Conductor Stack For Fin-type Field Effect Transistors Formed On Type Iii-v Semiconductor Material And Silicon Germanium Semiconductor Material
App 20170358579 - Ando; Takashi ; et al. | 2017-12-14 |
Semiconductor device and method of manufacturing the semiconductor device
Grant 9,812,556 - Mochizuki , et al. November 7, 2 | 2017-11-07 |
Asymmetric III-V MOSFET on silicon substrate
Grant 9,773,903 - Cheng , et al. September 26, 2 | 2017-09-26 |
Transistor Structure With Varied Gate Cross-sectional Area
App 20170271483 - Schepis; Dominic J. ; et al. | 2017-09-21 |
Structure and method for multi-threshold voltage adjusted silicon germanium alloy devices with same silicon germanium content
Grant 9,755,078 - Hashemi , et al. September 5, 2 | 2017-09-05 |
Non-uniform Gate Dielectric For U-shape Mosfet
App 20170250263 - Kerber; Pranita ; et al. | 2017-08-31 |
Method for forming through silicon via in N+ epitaxy wafers with reduced parasitic capacitance
Grant 9,748,114 - Cheng , et al. August 29, 2 | 2017-08-29 |
FinFET device with vertical silicide on recessed source/drain epitaxy regions
Grant 9,741,807 - Fogel , et al. August 22, 2 | 2017-08-22 |
Metallized Junction Finfet Structures
App 20170221926 - Doris; Bruce B. ; et al. | 2017-08-03 |
High-k Gate Dielectric And Metal Gate Conductor Stack For Fin-type Field Effect Transistors Formed On Type Iii-v Semiconductor Material And Silicon Germanium Semiconductor Material
App 20170221898 - Ando; Takashi ; et al. | 2017-08-03 |
Reduced current leakage semiconductor device
Grant 9,722,031 - Cheng , et al. August 1, 2 | 2017-08-01 |
Structure And Method For Tensile And Compressive Strained Silicon Germanium With Same Germanium Concentration By Single Epitaxy Step
App 20170207136 - Kerber; Pranita ; et al. | 2017-07-20 |
Iii-v Transistor Device With Self-aligned Doped Bottom Barrier
App 20170179288 - Cheng; Cheng-Wei ; et al. | 2017-06-22 |
Iii-v Transistor Device With Doped Bottom Barrier
App 20170179232 - Cheng; Cheng-Wei ; et al. | 2017-06-22 |
Semiconductor device including epitaxially formed buried channel region
Grant 9,679,969 - Deng , et al. June 13, 2 | 2017-06-13 |
ESD device compatible with bulk bias capability
Grant 9,673,190 - Cheng , et al. June 6, 2 | 2017-06-06 |
Structure and method for tensile and compressive strained silicon germanium with same germanium concentration by single epitaxy step
Grant 9,647,119 - Kerber , et al. May 9, 2 | 2017-05-09 |
Multi-height fin field effect transistors
Grant 9,640,552 - Kerber , et al. May 2, 2 | 2017-05-02 |
Structure And Method For Multi-threshold Voltage Adjusted Silicon Germanium Alloy Devices With Same Silicon Germanium Content
App 20170117413 - Hashemi; Pouya ; et al. | 2017-04-27 |
Metallized junction FinFET structures
Grant 9,634,028 - Doris , et al. April 25, 2 | 2017-04-25 |
Metallized junction FinFET structures
Grant 9,627,410 - Doris , et al. April 18, 2 | 2017-04-18 |
Reduced current leakage semiconductor device
Grant 9,627,482 - Cheng , et al. April 18, 2 | 2017-04-18 |
Esd Device Compatible With Bulk Bias Capability
App 20170098646 - Cheng; Kangguo ; et al. | 2017-04-06 |
Asymmetric Iii-v Mosfet On Silicon Substrate
App 20170092763 - Cheng; Cheng-Wei ; et al. | 2017-03-30 |
Finfet Device With Vertical Silicide On Recessed Source/drain Epitaxy Regions
App 20170077249 - Fogel; Keith E. ; et al. | 2017-03-16 |
Semiconductor device including epitaxially formed buried channel region
Grant 9,595,598 - Deng , et al. March 14, 2 | 2017-03-14 |
Semiconductor Device Including Epitaxially Formed Buried Channel Region
App 20170069718 - Deng; Jie ; et al. | 2017-03-09 |
Semiconductor device including epitaxially formed buried channel region
Grant 9,590,106 - Deng , et al. March 7, 2 | 2017-03-07 |
Semiconductor Device Including Epitaxially Formed Buried Channel Region
App 20170062589 - Deng; Jie ; et al. | 2017-03-02 |
Semiconductor Device Including Epitaxially Formed Buried Channel Region
App 20170062602 - Deng; Jie ; et al. | 2017-03-02 |
Semiconductor Device Including Epitaxially Formed Buried Channel Region
App 20170062570 - Deng; Jie ; et al. | 2017-03-02 |
High-k Gate Dielectric And Metal Gate Conductor Stack For Fin-type Field Effect Transistors Formed On Type Iii-v Semiconductor Material And Silicon Germanium Semiconductor Material
App 20170053915 - Ando; Takashi ; et al. | 2017-02-23 |
FinFET device with vertical silicide on recessed source/drain epitaxy regions
Grant 9,576,806 - Fogel , et al. February 21, 2 | 2017-02-21 |
Selective importance sampling
Grant 9,576,085 - Joshi , et al. February 21, 2 | 2017-02-21 |
Asymmetric III-V MOSFET on silicon substrate
Grant 9,553,166 - Cheng , et al. January 24, 2 | 2017-01-24 |
Shallow trench isolation structures
Grant 9,548,356 - Doris , et al. January 17, 2 | 2017-01-17 |
III-V MOSFETs with halo-doped bottom barrier layer
Grant 9,530,860 - Kerber , et al. December 27, 2 | 2016-12-27 |
Semiconductor device including gate channel having adjusted threshold voltage
Grant 9,530,699 - Kerber , et al. December 27, 2 | 2016-12-27 |
SiGe FINFET WITH IMPROVED JUNCTION DOPING CONTROL
App 20160358775 - Kerber; Pranita ; et al. | 2016-12-08 |
REDUCED RESISTANCE SHORT-CHANNEL InGaAs PLANAR MOSFET
App 20160359036 - Kerber; Pranita ; et al. | 2016-12-08 |
III-V field effect transistor (FET) with reduced short channel leakage, integrated circuit (IC) chip and method of manufacture
Grant 9,515,165 - Cheng , et al. December 6, 2 | 2016-12-06 |
Metallized Junction Finfet Structures
App 20160343572 - Doris; Bruce B. ; et al. | 2016-11-24 |
Metallized Junction Finfet Structures
App 20160343734 - Doris; Bruce B. ; et al. | 2016-11-24 |
Structure and method for highly strained germanium channel fins for high mobility pFINFETs
Grant 9,502,420 - Bedell , et al. November 22, 2 | 2016-11-22 |
FinFET device including fins having a smaller thickness in a channel region, and a method of manufacturing same
Grant 9,502,408 - Kerber , et al. November 22, 2 | 2016-11-22 |
Strained silicon--germanium integrated circuit with inversion capacitance enhancement and method to fabricate same
Grant 9,484,412 - Ando , et al. November 1, 2 | 2016-11-01 |
MOSFET with work function adjusted metal backgate
Grant 9,484,359 - Cheng , et al. November 1, 2 | 2016-11-01 |
High-K gate dielectric and metal gate conductor stack for planar field effect transistors formed on type III-V semiconductor material and silicon germanium semiconductor material
Grant 9,472,553 - Ando , et al. October 18, 2 | 2016-10-18 |
Finfet Device With Vertical Silicide On Recessed Source/drain Epitaxy Regions
App 20160293428 - Fogel; Keith E. ; et al. | 2016-10-06 |
Selective importance sampling
Grant 9,460,243 - Joshi , et al. October 4, 2 | 2016-10-04 |
Structure and method for tensile and compressive strained silicon germanium with same germanium concentration by single epitaxy step
Grant 9,443,873 - Kerber , et al. September 13, 2 | 2016-09-13 |
SiGe FinFET with improved junction doping control
Grant 9,443,963 - Kerber , et al. September 13, 2 | 2016-09-13 |
Defect reduction with rotated double aspect ratio trapping
Grant 9,443,940 - Fogel , et al. September 13, 2 | 2016-09-13 |
Reduced Current Leakage Semiconductor Device
App 20160254193 - Cheng; Cheng-Wei ; et al. | 2016-09-01 |
Reduced Current Leakage Semiconductor Device
App 20160254352 - Cheng; Cheng-Wei ; et al. | 2016-09-01 |
Non-uniform Gate Dielectric For U-shape Mosfet
App 20160247888 - Kerber; Pranita ; et al. | 2016-08-25 |
Reduced resistance short-channel InGaAs planar MOSFET
Grant 9,412,865 - Kerber , et al. August 9, 2 | 2016-08-09 |
Reduced current leakage semiconductor device
Grant 9,397,161 - Cheng , et al. July 19, 2 | 2016-07-19 |
FinFET device with vertical silicide on recessed source/drain epitaxy regions
Grant 9,391,173 - Fogel , et al. July 12, 2 | 2016-07-12 |
MOSFET with work function adjusted metal backgate
Grant 9,391,091 - Cheng , et al. July 12, 2 | 2016-07-12 |
Strained semiconductor trampoline
Grant 9,391,198 - Kerber , et al. July 12, 2 | 2016-07-12 |
Source and drain doping profile control employing carbon-doped semiconductor material
Grant 9,385,237 - Kerber , et al. July 5, 2 | 2016-07-05 |
SiGe finFET with improved junction doping control
Grant 9,379,219 - Kerber , et al. June 28, 2 | 2016-06-28 |
III-V MOSFETS With Halo-Doped Bottom Barrier Layer
App 20160181394 - Kerber; Pranita ; et al. | 2016-06-23 |
SiGe FINFET WITH IMPROVED JUNCTION DOPING CONTROL
App 20160172469 - Kerber; Pranita ; et al. | 2016-06-16 |
High-K gate dielectric and metal gate conductor stack for planar field effect transistors formed on type III-V semiconductor material and silicon germanium semiconductor material
Grant 9,362,282 - Ando , et al. June 7, 2 | 2016-06-07 |
Integrated circuit with on chip planar diode and CMOS devices
Grant 9,356,019 - Cheng , et al. May 31, 2 | 2016-05-31 |
MOSFETs with reduced contact resistance
Grant 9,356,119 - Doris , et al. May 31, 2 | 2016-05-31 |
Structure and method to improve ETSOI MOSFETS with back gate
Grant 9,337,259 - Cheng , et al. May 10, 2 | 2016-05-10 |
Semiconductor Device Including Gate Channel Having Adjusted Threshold Voltage
App 20160111340 - Kerber; Pranita ; et al. | 2016-04-21 |
Structure to enhance gate induced strain effect in multigate devices
Grant 9,293,464 - Basker , et al. March 22, 2 | 2016-03-22 |
Strained Semiconductor Trampoline
App 20160079419 - Kerber; Pranita ; et al. | 2016-03-17 |
FinFET device having a merge source drain region under contact areas and unmerged fins between contact areas, and a method of manufacturing same
Grant 9,276,118 - Kerber , et al. March 1, 2 | 2016-03-01 |
Semiconductor device including gate channel having adjusted threshold voltage
Grant 9,275,908 - Kerber , et al. March 1, 2 | 2016-03-01 |
Junction field effect transistor with an epitaxially grown gate structure
Grant 9,240,497 - Ning , et al. January 19, 2 | 2016-01-19 |
Source and drain doping profile control employing carbon-doped semiconductor material
Grant 9,231,108 - Kerber , et al. January 5, 2 | 2016-01-05 |
Semiconductor device including gate channel having adjusted threshold voltage
Grant 9,230,992 - Kerber , et al. January 5, 2 | 2016-01-05 |
Structure and method to modulate threshold voltage for high-K metal gate field effect transistors (FETs)
Grant 9,214,397 - Doris , et al. December 15, 2 | 2015-12-15 |
Integrated circuit having back gating, improved isolation and reduced well resistance and method to fabricate same
Grant 9,202,864 - Cai , et al. December 1, 2 | 2015-12-01 |
Shallow trench isolation structures
Grant 9,190,313 - Doris , et al. November 17, 2 | 2015-11-17 |
Semiconductor Device Including Gate Channel Having Adjusted Threshold Voltage
App 20150318218 - Kerber; Pranita ; et al. | 2015-11-05 |
Semiconductor Device Including Gate Channel Having Adjusted Threshold Voltage
App 20150318307 - Kerber; Pranita ; et al. | 2015-11-05 |
Finfet Device With Vertical Silicide On Recessed Source/drain Epitaxy Regions
App 20150303281 - Fogel; Keith E. ; et al. | 2015-10-22 |
Multi-height Fin Field Effect Transistors
App 20150287809 - Kerber; Pranita ; et al. | 2015-10-08 |
SiGe FINFET WITH IMPROVED JUNCTION DOPING CONTROL
App 20150287810 - Kerber; Pranita ; et al. | 2015-10-08 |
Multi-height Fin Field Effect Transistors
App 20150287743 - Kerber; Pranita ; et al. | 2015-10-08 |
Integrated Circuit With On Chip Planar Diode And Cmos Devices
App 20150262998 - Cheng; Kangguo ; et al. | 2015-09-17 |
Mosfet With Work Function Adjusted Metal Backgate
App 20150263041 - Cheng; Kangguo ; et al. | 2015-09-17 |
Shallow Trench Isolation Structures
App 20150255538 - Doris; Bruce B. ; et al. | 2015-09-10 |
Buried-channel Field-effect Transistors
App 20150249125 - CHENG; KANGGUO ; et al. | 2015-09-03 |
Structure to Enhance Gate Induced Strain Effect in Multigate Devices
App 20150236021 - Basker; Veeraraghavan S. ; et al. | 2015-08-20 |
Mosfet With Work Function Adjusted Metal Backgate
App 20150228489 - Cheng; Kangguo ; et al. | 2015-08-13 |
Method and structure to enhance gate induced strain effect in multigate device
Grant 9,105,662 - Basker , et al. August 11, 2 | 2015-08-11 |
Source And Drain Doping Profile Control Employing Carbon-doped Semiconductor Material
App 20150221724 - Kerber; Pranita ; et al. | 2015-08-06 |
Method And Structure To Enhance Gate Induced Strain Effect In Multigate Device
App 20150206953 - Basker; Veeraraghavan S. ; et al. | 2015-07-23 |
FinFET DEVICE HAVING A MERGE SOURCE DRAIN REGION UNDER CONTACT AREAS AND UNMERGED FINS BETWEEN CONTACT AREAS, AND A METHOD OF MANUFACTURING SAME
App 20150179789 - Kerber; Pranita ; et al. | 2015-06-25 |
Through Silicon Via In N+ Epitaxy Wafers With Reduced Parasitic Capacitance
App 20150179548 - Cheng; Kangguo ; et al. | 2015-06-25 |
MOSFET with recessed channel film and abrupt junctions
Grant 9,059,005 - Cheng , et al. June 16, 2 | 2015-06-16 |
Integrated circuit diode
Grant 9,059,014 - Cheng , et al. June 16, 2 | 2015-06-16 |
MOSFET with recessed channel film and abrupt junctions
Grant 9,053,946 - Cheng , et al. June 9, 2 | 2015-06-09 |
MOSFET with recessed channel film and abrupt junctions
Grant 9,041,108 - Cheng , et al. May 26, 2 | 2015-05-26 |
Method and structure for forming high-K/metal gate extremely thin semiconductor on insulator device
Grant 9,041,009 - Doris , et al. May 26, 2 | 2015-05-26 |
FinFET DEVICE INCLUDING FINS HAVING A SMALLER THICKNESS IN A CHANNEL REGION, AND A METHOD OF MANUFACTURING SAME
App 20150129982 - Kerber; Pranita ; et al. | 2015-05-14 |
Through silicon via in n+ epitaxy wafers with reduced parasitic capacitance
Grant 9,029,988 - Cheng , et al. May 12, 2 | 2015-05-12 |
Integrated circuit including DRAM and SRAM/logic
Grant 9,018,052 - Basker , et al. April 28, 2 | 2015-04-28 |
Integrated circuit having raised source drains devices with reduced silicide contact resistance and methods to fabricate same
Grant 9,018,714 - Cheng , et al. April 28, 2 | 2015-04-28 |
FinFET device having a merged source drain region under contact areas and unmerged fins between contact areas, and a method of manufacturing same
Grant 8,993,406 - Kerber , et al. March 31, 2 | 2015-03-31 |
Reduced resistance SiGe FinFET devices and method of forming same
Grant 8,994,072 - Kerber , et al. March 31, 2 | 2015-03-31 |
Finfet Device Having A Merged Source Drain Region Under Contact Areas And Unmerged Fins Between Contact Areas, And A Method Of Manufacturing Same
App 20150069527 - Kerber; Pranita ; et al. | 2015-03-12 |
Integrated Circuit Including Dram And Sram/logic
App 20150064853 - Basker; Veeraraghavan S. ; et al. | 2015-03-05 |
Integrated circuit having raised source drains devices with reduced silicide contact resistance and methods to fabricate same
Grant 8,962,412 - Cheng , et al. February 24, 2 | 2015-02-24 |
Semiconductor device having SSOI substrate with relaxed tensile stress
Grant 8,963,248 - Basker , et al. February 24, 2 | 2015-02-24 |
Source And Drain Doping Profile Control Employing Carbon-doped Semiconductor Material
App 20150044846 - Kerber; Pranita ; et al. | 2015-02-12 |
Semiconductor device having SSOI substrate with relaxed tensile stress
Grant 8,946,063 - Basker , et al. February 3, 2 | 2015-02-03 |
Three dimensional FET devices having different device widths
Grant 8,946,010 - Cheng , et al. February 3, 2 | 2015-02-03 |
REDUCED RESISTANCE SiGe FinFET DEVICES AND METHOD OF FORMING SAME
App 20140361338 - Kerber; Pranita ; et al. | 2014-12-11 |
REDUCED RESISTANCE SiGe FinFET DEVICES AND METHOD OF FORMING SAME
App 20140361368 - Kerber; Pranita ; et al. | 2014-12-11 |
Integrated Circuit Having Raised Source Drains Devices with Reduced Silicide Contact Resistance and Methods to Fabricate Same
App 20140349459 - Cheng; Kangguo ; et al. | 2014-11-27 |
Reduced resistance SiGe FinFET devices and method of forming same
Grant 8,895,395 - Kerber , et al. November 25, 2 | 2014-11-25 |
Integrated Circuit Having Raised Source Drains Devices with Reduced Silicide Contact Resistance and Methods to Fabricate Same
App 20140332903 - Cheng; Kangguo ; et al. | 2014-11-13 |
Integrated circuit having raised source drains devices with reduced silicide contact resistance and methods to fabricate same
Grant 8,878,311 - Cheng , et al. November 4, 2 | 2014-11-04 |
Strained thin body CMOS device having vertically raised source/drain stressors with single spacer
Grant 8,853,040 - Cheng , et al. October 7, 2 | 2014-10-07 |
Selective Importance Sampling
App 20140278309 - Joshi; Rajiv V. ; et al. | 2014-09-18 |
Selective Importance Sampling
App 20140278296 - Joshi; Rajiv V. ; et al. | 2014-09-18 |
Inducing channel stress in semiconductor-on-insulator devices by base substrate oxidation
Grant 8,815,694 - Cheng , et al. August 26, 2 | 2014-08-26 |
Three Dimensional Fet Devices Having Different Device Widths
App 20140206181 - Cheng; Kangguo ; et al. | 2014-07-24 |
Integrated Circuit Having Back Gating, Improved Isolation and Reduced Well Resistance and Method to Fabricate Same
App 20140183687 - CAI; Jin ; et al. | 2014-07-03 |
MOSFET with thin semiconductor channel and embedded stressor with enhanced junction isolation and method of fabrication
Grant 8,759,168 - Cheng , et al. June 24, 2 | 2014-06-24 |
Semiconductor Device Having SSOI Substrate
App 20140151806 - Basker; Veeraraghavan S. ; et al. | 2014-06-05 |
Shallow Trench Isolation Structures
App 20140154865 - Doris; Bruce B. ; et al. | 2014-06-05 |
Inducing Channel Stress in Semiconductor-on-Insulator Devices by Base Substrate Oxidation
App 20140151803 - Cheng; Kangguo ; et al. | 2014-06-05 |
Semiconductor Device Having SSOI Substrate
App 20140151802 - Basker; Veeraraghavan S. ; et al. | 2014-06-05 |
Fully-depleted son
Grant 8,742,504 - Cheng , et al. June 3, 2 | 2014-06-03 |
Junction Field Effect Transistor With An Epitaxially Grown Gate Structure
App 20140145246 - Ning; Tak H. ; et al. | 2014-05-29 |
Structure And Method To Improve Etsoi Mosfets With Back Gate
App 20140124862 - Cheng; Kangguo ; et al. | 2014-05-08 |
FET Devices with Oxide Spacers
App 20140103455 - Ando; Takashi ; et al. | 2014-04-17 |
Finfet Circuits With Various Fin Heights
App 20140106528 - Quyang; Qiqing C. ; et al. | 2014-04-17 |
Finfet Circuits With Various Fin Heights
App 20140103451 - Ouyang; Qiqing C. ; et al. | 2014-04-17 |
SOI device with DTI and STI
Grant 8,652,888 - Cheng , et al. February 18, 2 | 2014-02-18 |
Mosfet With Recessed Channel Film And Abrupt Junctions
App 20140042521 - Cheng; Kangguo ; et al. | 2014-02-13 |
Mosfet With Recessed Channel Film And Abrupt Junctions
App 20140042542 - Cheng; Kangguo ; et al. | 2014-02-13 |
Mosfet With Recessed Channel Film And Abrupt Junctions
App 20140042543 - Cheng; Kangguo ; et al. | 2014-02-13 |
Junction field effect transistor with an epitaxially grown gate structure
Grant 8,647,936 - Ning , et al. February 11, 2 | 2014-02-11 |
Non-relaxed embedded stressors with solid source extension regions in CMOS devices
Grant 8,647,939 - Cheng , et al. February 11, 2 | 2014-02-11 |
Non-relaxed Embedded Stressors With Solid Source Extension Regions In Cmos Devices
App 20130337621 - Cheng; Kangguo ; et al. | 2013-12-19 |
Strained Thin Body Cmos Device Having Vertically Raised Source/drain Stressors With Single Spacer
App 20130330887 - Cheng; Kangguo ; et al. | 2013-12-12 |
Soi Device With Dti And Sti
App 20130288451 - Cheng; Kangguo ; et al. | 2013-10-31 |
Controlled fin-merging for fin type FET devices
Grant 8,564,064 - Cheng , et al. October 22, 2 | 2013-10-22 |
Field effect transistor with asymmetric abrupt junction implant
Grant 8,551,848 - Kerber , et al. October 8, 2 | 2013-10-08 |
Fully-depleted Son
App 20130240993 - Cheng; Kangguo ; et al. | 2013-09-19 |
Integrated Circuit Diode
App 20130240998 - Cheng; Kangguo ; et al. | 2013-09-19 |
Junction Field Effect Transistor With An Epitaxially Grown Gate Structure
App 20130161706 - Ning; Tak H. ; et al. | 2013-06-27 |
Method And Structure For Forming High-k/metal Gate Extremely Thin Semiconductor On Insulator Device
App 20130153929 - Doris; Bruce B. ; et al. | 2013-06-20 |
MOSFETs WITH REDUCED CONTACT RESISTANCE
App 20130157423 - Doris; Bruce B. ; et al. | 2013-06-20 |
Through Silicon Via In N+ Epitaxy Wafers With Reduced Parasitic Capacitance
App 20130127067 - Cheng; Kangguo ; et al. | 2013-05-23 |
Semiconductor Fabrication
App 20130078781 - Kerber; Pranita ; et al. | 2013-03-28 |
Controlled Fin-Merging for Fin Type FET Devices
App 20130069171 - Cheng; Kangguo ; et al. | 2013-03-21 |
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