loadpatents
name:-0.00044608116149902
name:-0.019705057144165
name:-0.0011129379272461
Kepler; Nick Patent Filings

Kepler; Nick

Patent Applications and Registrations

Patent applications and USPTO patent grants for Kepler; Nick.The latest application filed is for "shallow trench isolation formation with ion implantation".

Company Profile
0.15.0
  • Kepler; Nick - Saratoga CA
  • Kepler; Nick - San Jose CA
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Shallow trench isolation formation with ion implantation
Grant 6,599,810 - Kepler , et al. July 29, 2
2003-07-29
Method of forming junction-leakage free metal silicide in a semiconductor wafer by amorphization of refractory metal layer
Grant 6,274,511 - Wieczorek , et al. August 14, 2
2001-08-14
Method of forming junction-leakage free metal silicide in a semiconductor wafer by amorphization of source and drain regions
Grant 6,255,214 - Wieczorek , et al. July 3, 2
2001-07-03
Stepper alignment mark structure for maintaining alignment integrity
Grant 6,239,031 - Kepler , et al. May 29, 2
2001-05-29
Formation of junctions by diffusion from a doped amorphous silicon film during silicidation
Grant 6,169,005 - Kepler , et al. January 2, 2
2001-01-02
Method for decreasing the contact resistance of silicide contacts by retrograde implantation of source/drain regions
Grant 6,156,615 - Kepler December 5, 2
2000-12-05
Shallow junction formation by out-diffusion from a doped dielectric layer through a salicide layer
Grant 6,150,243 - Wieczorek , et al. November 21, 2
2000-11-21
Silicidation with silicon buffer layer and silicon spacers
Grant 6,100,145 - Kepler , et al. August 8, 2
2000-08-08
Formation of junctions by diffusion from a doped film into and through a silicide during silicidation
Grant 6,096,599 - Kepler , et al. August 1, 2
2000-08-01
Shallow trench isolation formation with trench wall spacer
Grant 6,074,927 - Kepler , et al. June 13, 2
2000-06-13
Low pressure baked HSQ gap fill layer following barrier layer deposition for high integrity borderless vias
Grant 6,046,104 - Kepler April 4, 2
2000-04-04
Stepper alignment mark structure for maintaining alignment integrity
Grant 6,037,671 - Kepler , et al. March 14, 2
2000-03-14
Dual gate oxide formation with minimal channel dopant diffusion
Grant 6,030,862 - Kepler February 29, 2
2000-02-29
Shallow trench isolation formation with reduced polish stop thickness
Grant 5,930,645 - Lyons , et al. July 27, 1
1999-07-27
Method for simplifying the manufacture of an interlayer dielectric stack
Grant 5,795,820 - Kepler August 18, 1
1998-08-18

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