KENNEL; Harold W.

Patent Applications and Registrations

Patent applications and USPTO patent grants for KENNEL; Harold W..The latest application filed is for "semiconductor nanowire device having (111)-plane channel sidewalls".

Company Profile

42.45.63

KENNEL; Harold W. - Portland OR
Kennel; Harold W - Portland OR

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Semiconductor Nanowire Device Having (111)-plane Channel Sidewalls App 20220310600 - WEBER; Cory E. ; et al.	2022-09-29
Field effect transistors with wide bandgap materials Grant 11,444,159 - Ma , et al. September 13, 2	2022-09-13
Semiconductor nanowire device having (111)-plane channel sidewalls Grant 11,398,478 - Weber , et al. July 26, 2	2022-07-26
Reducing Band-to-band Tunneling In Semiconductor Devices App 20220109072 - CHU-KUNG; Benjamin ; et al.	2022-04-07
Cmos Finfet Device Having Strained Sige Fins And A Strained Si Cladding Layer On The Nmos Channel App 20220059656 - Cea; Stephen M. ; et al.	2022-02-24
Reducing band-to-band tunneling in semiconductor devices Grant 11,233,148 - Chu-Kung , et al. January 25, 2	2022-01-25
Channel Depopulation For Forksheet Transistors App 20210408009 - ZHENG; Peng ; et al.	2021-12-30
Method of fabricating a semiconductor device with strained SiGe fins and a Si cladding layer Grant 11,195,919 - Cea , et al. December 7, 2	2021-12-07
Transistor structures having multiple threshold voltage channel materials Grant 11,177,255 - Ma , et al. November 16, 2	2021-11-16
Group III-V semiconductor devices having asymmetric source and drain structures Grant 11,164,747 - Ma , et al. November 2, 2	2021-11-02
Integrated circuit with germanium-rich channel transistors including one or more dopant diffusion barrier elements Grant 11,101,350 - Glass , et al. August 24, 2	2021-08-24
Art trench spacers to enable fin release for non-lattice matched channels Grant 11,049,773 - Dewey , et al. June 29, 2	2021-06-29
Gradient doping to lower leakage in low band gap material devices Grant 11,024,713 - Sung , et al. June 1, 2	2021-06-01
Thin film cap to lower leakage in low band gap material devices Grant 10,985,263 - Sung , et al. April 20, 2	2021-04-20
High-mobility field effect transistors with wide bandgap fin cladding Grant 10,957,769 - Ma , et al. March 23, 2	2021-03-23
Methods and apparatus for gettering impurities in semiconductors Grant 10,937,665 - Lilak , et al. March 2, 2	2021-03-02
Device isolation by fixed charge Grant 10,892,335 - Ma , et al. January 12, 2	2021-01-12
Group III-V material transistors employing nitride-based dopant diffusion barrier layer Grant 10,886,408 - Mohapatra , et al. January 5, 2	2021-01-05
Transistors with non-vertical gates Grant 10,879,365 - Huang , et al. December 29, 2	2020-12-29
Stiff quantum layers to slow and or stop defect propagation Grant 10,861,939 - Metz , et al. December 8, 2	2020-12-08
High Mobility Strained Channels For Fin-based Nmos Transistors App 20200381549 - CEA; STEPHEN M. ; et al.	2020-12-03
High mobility strained channels for fin-based NMOS transistors Grant 10,854,752 - Cea , et al. December 1, 2	2020-12-01
Indium-rich NMOS transistor channels Grant 10,818,793 - Mohapatra , et al. October 27, 2	2020-10-27
Aluminum Indium Phosphide Subfin Germanium Channel Transistors App 20200328278 - Metz; Matthew V. ; et al.	2020-10-15
High-mobility Field Effect Transistors With Wide Bandgap Fin Cladding App 20200321439 - Ma; Sean T. ; et al.	2020-10-08
Transistors With High Density Channel Semiconductor Over Dielectric Material App 20200287024 - Dewey; Gilbert ; et al.	2020-09-10
Transistor Structures Having Multiple Threshold Voltage Channel Materials App 20200279845 - Ma; Sean T. ; et al.	2020-09-03
Reducing Off-state Leakage In Semiconductor Devices App 20200279910 - Basu; Dipanjan ; et al.	2020-09-03
Germanium-rich Channel Transistors Including One Or More Dopant Diffusion Barrier Elements App 20200273952 - GLASS; GLENN A. ; et al.	2020-08-27
Reducing Band-to-band Tunneling In Semiconductor Devices App 20200266296 - Chu-Kung; Benjamin ; et al.	2020-08-20
Aluminum indium phosphide subfin germanium channel transistors Grant 10,734,488 - Metz , et al.	2020-08-04
Aluminum Indium Phosphide Subfin Germanium Channel Transistors App 20200212186 - Metz; Matthew V. ; et al.	2020-07-02
Group Iii-v Semiconductor Devices Having Asymmetric Source And Drain Structures App 20200203169 - MA; Sean T. ; et al.	2020-06-25
Germanium-rich channel transistors including one or more dopant diffusion barrier elements Grant 10,692,973 - Glass , et al.	2020-06-23
Device Isolation By Fixed Charge App 20200185501 - Ma; Sean T. ; et al.	2020-06-11
Transistor With Wide Bandgap Channel And Narrow Bandgap Source/drain App 20200144374 - MA; Sean T. ; et al.	2020-05-07
Thin Film Cap To Lower Leakage In Low Band Gap Material Devices App 20200083354 - SUNG; Seung Hoon ; et al.	2020-03-12
Field Effect Transistors With Wide Bandgap Materials App 20200066843 - MA; Sean T. ; et al.	2020-02-27
An Indium-containing Fin Of A Transistor Device With An Indium-rich Core App 20200066855 - MOHAPATRA; Chandra S. ; et al.	2020-02-27
Backside isolation for integrated circuit Grant 10,573,715 - Lilak , et al. Feb	2020-02-25
Subfin Leakage Suppression Using Fixed Charge App 20200044059 - Ma; Sean T. ; et al.	2020-02-06
Low damage self-aligned amphoteric FINFET tip doping Grant 10,546,858 - Kavalieros , et al. Ja	2020-01-28
Dopant diffusion barrier for source/drain to curb dopant atom diffusion Grant 10,529,808 - Mohapatra , et al. J	2020-01-07
Transistors With Non-vertical Gates App 20200006510 - Huang; Cheng-Ying ; et al.	2020-01-02
III-V semiconductor alloys for use in the subfin of non-planar semiconductor devices and methods of forming the same Grant 10,497,814 - Kennel , et al. De	2019-12-03
Transistors Employing Cap Layer For Ge-rich Source/drain Regions App 20190348415 - SUNG; SEUNG HOON ; et al.	2019-11-14
Germanium-rich Channel Transistors Including One Or More Dopant Diffusion Barrier Elements App 20190348500 - GLASS; Glenn A. ; et al.	2019-11-14
Gradient Doping To Lower Leakage In Low Band Gap Material Devices App 20190341453 - Sung; Seung Hoon ; et al.	2019-11-07
High-electron-mobility transistors with heterojunction dopant diffusion barrier Grant 10,446,685 - Mohapatra , et al. Oc	2019-10-15
Art Trench Spacers To Enable Fin Release For Non-lattice Matched Channels App 20190267289 - DEWEY; Gilbert ; et al.	2019-08-29
High-electron-mobility transistors with counter-doped dopant diffusion barrier Grant 10,388,764 - Mohapatra , et al. A	2019-08-20
Group Iii-v Material Transistors Employing Nitride-based Dopant Diffusion Barrier Layer App 20190198658 - Mohapatra; Chandra S. ; et al.	2019-06-27
Stiff Quantum Layers To Slow And Or Stop Defect Propagation App 20190189753 - Metz; Matthew ; et al.	2019-06-20
Methods And Apparatus For Gettering Impurities In Semiconductors App 20190189464 - Lilak; Aaron D. ; et al.	2019-06-20
Indium-rich Nmos Transistor Channels App 20190189794 - MOHAPATRA; CHANDRA S. ; et al.	2019-06-20
High Mobility Strained Channels For Fin-based Nmos Transistors App 20190115466 - CEA; STEPHEN M. ; et al.	2019-04-18
Carrier confinement for high mobility channel devices Grant 10,243,078 - Dewey , et al.	2019-03-26
Indium-rich NMOS transistor channels Grant 10,229,997 - Mohapatra , et al.	2019-03-12
CMOS FinFET Device Having Strained SiGe Fins and a Strained Si Cladding Layer on the NMOS Channel App 20190035893 - Cea; Stephen M. ; et al.	2019-01-31
Dopant Diffusion Barrier For Source/drain To Curb Dopant Atom Diffusion App 20190035897 - MOHAPATRA; Chandra S. ; et al.	2019-01-31
Semiconductor device having germanium active layer with underlying diffusion barrier layer Grant 10,186,580 - Rachmady , et al. Ja	2019-01-22
High mobility strained channels for fin-based NMOS transistors Grant 10,153,372 - Cea , et al. Dec	2018-12-11
Backside Isolation For Integrated Circuit App 20180331183 - LILAK; AARON D. ; et al.	2018-11-15
Iii-v Semiconductor Alloys For Use In The Subfin Of Non-planar Semiconductor Devices And Methods Of Forming The Same App 20180323310 - KENNEL; HAROLD W. ; et al.	2018-11-08
CMOS FinFET device having strained SiGe fins and a strained Si cladding layer on the NMOS channel Grant 10,109,711 - Cea , et al. October 23, 2	2018-10-23
Strained channel region transistors employing source and drain stressors and systems including the same Grant 10,103,263 - Le , et al. October 16, 2	2018-10-16
High-electron-mobility Transistors With Counter-doped Dopant Diffusion Barrier App 20180254332 - Mohapatra; Chandra S. ; et al.	2018-09-06
High-electron-mobility Transistors With Heterojunction Dopant Diffusion Barrier App 20180248028 - Mohapatra; Chandra S. ; et al.	2018-08-30
Low Damage Self-aligned Amphoteric Finfet Tip Doping App 20180226405 - Kavalieros; Jack T. ; et al.	2018-08-09
Indium-rich Nmos Transistor Channels App 20180158944 - MOHAPATRA; CHANDRA S. ; et al.	2018-06-07
Carbon-based Interface For Epitaxially Grown Source/drain Transistor Regions App 20180151733 - GLASS; GLENN A. ; et al.	2018-05-31
Tin doped III-V material contacts Grant 9,966,440 - Glass , et al. May 8, 2	2018-05-08
CMOS FinFET device with dual strained cladding layers on relaxed SiGe fins, and method of fabricating the same Grant 9,935,107 - Cea , et al. April 3, 2	2018-04-03
GE and III-V channel semiconductor devices having maximized compliance and free surface relaxation Grant 9,905,651 - Pillarisetty , et al. February 27, 2	2018-02-27
Diffusion Tolerant Iii-v Semiconductor Heterostructures And Devices Including The Same App 20170345900 - KENNEL; HAROLD W. ; et al.	2017-11-30
Strain compensation in transistors Grant 9,818,884 - Le , et al. November 14, 2	2017-11-14
Carrier Confinement For High Mobility Channel Devices App 20170323962 - DEWEY; GILBERT ; et al.	2017-11-09
Strained Channel Region Transistors Employing Source And Drain Stressors And Systems Including The Same App 20170271515 - Le; Van H. ; et al.	2017-09-21
Strained channel region transistors employing source and drain stressors and systems including the same Grant 9,698,265 - Le , et al. July 4, 2	2017-07-04
Semiconductor Device Having Germanium Active Layer With Underlying Diffusion Barrier Layer App 20170162653 - RACHMADY; Willy ; et al.	2017-06-08
Ge And Iii-v Channel Semiconductor Devices Having Maximized Compliance And Free Surface Relaxation App 20170125524 - PILLARISETTY; RAVI ; et al.	2017-05-04
Semiconductor device having germanium active layer with underlying diffusion barrier layer Grant 9,608,055 - Rachmady , et al. March 28, 2	2017-03-28
Ge and III-V channel semiconductor devices having maximized compliance and free surface relaxation Grant 9,570,614 - Pillarisetty , et al. February 14, 2	2017-02-14
Strain Compensation In Transistors App 20160372607 - LE; VAN H. ; et al.	2016-12-22
High Mobility Strained Channels For Fin-based Nmos Transistors App 20160351701 - CEA; STEPHEN M. ; et al.	2016-12-01
Dual Strained Cladding Layers For Semiconductor Devices App 20160276347 - CEA; STEPHEN M ; et al.	2016-09-22
Nmos And Pmos Strained Devices Without Relaxed Substrates App 20160240616 - CEA; Stephen M. ; et al.	2016-08-18
Strained Channel Region Transistors Employing Source And Drain Stressors And Systems Including The Same App 20160233336 - Le; Van H. ; et al.	2016-08-11
Strained channel region transistors employing source and drain stressors and systems including the same Grant 9,397,166 - Le , et al. July 19, 2	2016-07-19
Ge and III-V Channel Semiconductor Devices having Maximized Compliance and Free Surface Relaxation App 20160204246 - PILLARISETTY; RAVI ; et al.	2016-07-14
Method for forming superactive deactivation-resistant junction with laser anneal and multiple implants Grant 9,240,322 - Jensen , et al. January 19, 2	2016-01-19
Tin Doped Iii-v Material Contacts App 20150054031 - GLASS; GLENN A. ; et al.	2015-02-26
Tin doped III-V material contacts Grant 8,896,066 - Glass , et al. November 25, 2	2014-11-25
Semiconductor Device Having Germanium Active Layer With Underlying Diffusion Barrier Layer App 20140008700 - Rachmady; Willy ; et al.	2014-01-09
Strained Channel Region Transistors Employing Source And Drain Stressors And Systems Including The Same App 20130285017 - Le; Van H. ; et al.	2013-10-31
Method For Forming Superactive Deactivation-resistant Junction With Laser Anneal And Multiple Implants App 20130267084 - Jensen; Jacob M. ; et al.	2013-10-10
Tin Doped Iii-v Material Contacts App 20130154016 - Glass; Glenn A. ; et al.	2013-06-20

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