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Patent applications and USPTO patent grants for Kawabata; Shin-Ichiro.The latest application filed is for "ammonothermal growth of group-iii nitride crystals on seeds with at least two surfaces making an acute, right or obtuse angle with each other".
Patent | Date |
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Ammonothermal growth of group-III nitride crystals on seeds with at least two surfaces making an acute, right or obtuse angle with each other Grant 9,133,564 - Pimputkar , et al. September 15, 2 | 2015-09-15 |
Hexagonal wurtzite type epitaxial layer possessing a low alkali-metal concentration and method of creating the same Grant 8,647,967 - Saito , et al. February 11, 2 | 2014-02-11 |
Ammonothermal Growth Of Group-iii Nitride Crystals On Seeds With At Least Two Surfaces Making An Acute, Right Or Obtuse Angle With Each Other App 20120164386 - Pimputkar; Siddha ;   et al. | 2012-06-28 |
Hexagonal Wurtzite Type Epitaxial Layer Possessing A Low Alkali-metal Concentration And Method Of Creating The Same App 20090294775 - Saito; Makoto ;   et al. | 2009-12-03 |
Method for producing semiconductor device and semiconductor device produced thereby Grant 5,051,376 - Yamada , et al. September 24, 1 | 1991-09-24 |
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