loadpatents
Patent applications and USPTO patent grants for Katsuyama; Tomokazu.The latest application filed is for "semiconductor optical device and method for manufacturing the same".
Patent | Date |
---|---|
Semiconductor optical device and method for manufacturing the same Grant 11,126,021 - Katsuyama September 21, 2 | 2021-09-21 |
Semiconductor Optical Device And Method For Manufacturing The Same App 20210041726 - KATSUYAMA; Tomokazu | 2021-02-11 |
Integrated semiconductor device Grant 9,341,772 - Katsuyama May 17, 2 | 2016-05-17 |
Integrated semiconductor device Grant 9,235,002 - Katsuyama January 12, 2 | 2016-01-12 |
Method for producing integrated optical device Grant 8,741,670 - Katsuyama June 3, 2 | 2014-06-03 |
Method for producing integrated optical device Grant 8,637,337 - Katsuyama January 28, 2 | 2014-01-28 |
Method for producing integrated optical device Grant 8,637,338 - Katsuyama , et al. January 28, 2 | 2014-01-28 |
Method For Producing Integrated Optical Device App 20130183778 - KATSUYAMA; Tomokazu | 2013-07-18 |
Method For Producing Integrated Optical Device App 20130183784 - KATSUYAMA; Tomokazu ;   et al. | 2013-07-18 |
Method For Producing Integrated Optical Device App 20130183783 - KATSUYAMA; Tomokazu | 2013-07-18 |
Integrated Semiconductor Device App 20130129278 - Katsuyama; Tomokazu | 2013-05-23 |
Integrated Semiconductor Device App 20130129277 - KATSUYAMA; Tomokazu | 2013-05-23 |
Method to form semiconductor laser diode with mesa structure buried by current blocking layer Grant 8,227,275 - Katsuyama July 24, 2 | 2012-07-24 |
Method to form semiconductor laser diode Grant 8,021,985 - Katsuyama September 20, 2 | 2011-09-20 |
Method for forming a semiconductor light-emitting device Grant 7,998,770 - Matsumura , et al. August 16, 2 | 2011-08-16 |
Method To Form Semiconductor Laser Diode App 20110159620 - KATSUYAMA; Tomokazu | 2011-06-30 |
Method of producing semiconductor optical device Grant 7,816,157 - Katsuyama October 19, 2 | 2010-10-19 |
Method To Form Semiconductor Laser Diode With Mesa Structure Buried By Current Blocking Layer App 20100190283 - KATSUYAMA; Tomokazu | 2010-07-29 |
Method of fabricating a semiconductor optical device Grant 7,723,138 - Katsuyama May 25, 2 | 2010-05-25 |
Integrated optical device and fabrication method thereof Grant 7,678,594 - Katsuyama March 16, 2 | 2010-03-16 |
Light-emitting device on n-type InP substrate heavily doped with sulfur Grant 7,627,009 - Katsuyama , et al. December 1, 2 | 2009-12-01 |
Method Of Producing Semiconductor Optical Device App 20090203159 - Katsuyama; Tomokazu | 2009-08-13 |
Semiconductor optical device App 20090117676 - Katsuyama; Tomokazu | 2009-05-07 |
Method for forming a semiconductor light-emitting device and a semiconductor light-emitting device App 20090001408 - Matsumura; Atsushi ;   et al. | 2009-01-01 |
Light-emitting device on n-type InP substrate heavily doped with sulfur App 20080095206 - Katsuyama; Tomokazu ;   et al. | 2008-04-24 |
Integrated optical device and fabrication method thereof App 20080003704 - Katsuyama; Tomokazu | 2008-01-03 |
AC coupling circuit having a large capacitance and a good frequency response Grant 7,196,909 - Katsuyama March 27, 2 | 2007-03-27 |
AC coupling circuit having a large capacitance and a good frequency response App 20040223306 - Katsuyama, Tomokazu | 2004-11-11 |
Optical module Grant 6,791,159 - Moto , et al. September 14, 2 | 2004-09-14 |
Optical module App 20040047540 - Moto, Akihiro ;   et al. | 2004-03-11 |
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