Katsuno; Masakazu

Patent Applications and Registrations

Patent applications and USPTO patent grants for Katsuno; Masakazu.The latest application filed is for "silicon carbide single crystal substrate and process for producing same".

Company Profile

1.20.23

Katsuno; Masakazu - Tokyo JP
Katsuno; Masakazu - Chiyoda-ku JP
Katsuno; Masakazu - Chiba JP
Katsuno, Masakazu - Futtsu-shi JP

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Method for producing silicon carbide single crystal and silicon carbide single crystal substrate Grant 10,711,369 - Sato , et al.	2020-07-14
Silicon Carbide Single Crystal Substrate And Process For Producing Same App 20190024257 - SATO; Shinya ; et al.	2019-01-24
Silicon carbide single crystal substrate and process for producing same Grant 10,119,200 - Sato , et al. November 6, 2	2018-11-06
Low resistivity single crystal silicon carbide wafer Grant 9,915,011 - Fujimoto , et al. March 13, 2	2018-03-13
Method For Producing Silicon Carbide Single Crystal And Silicon Carbide Single Crystal Substrate App 20170342593 - SATO; Shinya ; et al.	2017-11-30
Single-crystal silicon carbide and single-crystal silicon carbide wafer Grant 9,777,403 - Nakabayashi , et al. October 3, 2	2017-10-03
Process for producing epitaxial silicon carbide single crystal substrate and epitaxial silicon carbide single crystal substrate obtained by the same Grant 9,691,607 - Aigo , et al. June 27, 2	2017-06-27
Silicon carbide single crystal wafer and manufacturing method for same Grant 9,234,297 - Sato , et al. January 12, 2	2016-01-12
Silicon Carbide Single Crystal Substrate And Process For Producing Same App 20150267319 - Sato; Shinya ; et al.	2015-09-24
Apparatus for manufacturing single-crystal silicon carbide Grant 9,068,277 - Nakabayashi , et al. June 30, 2	2015-06-30
Crucible vessel and crucible cover having grooves for producing single-crystal silicon carbide, production apparatus and method Grant 8,936,680 - Katsuno , et al. January 20, 2	2015-01-20
Production process of epitaxial silicon carbide single crystal substrate Grant 8,927,396 - Aigo , et al. January 6, 2	2015-01-06
Silicon Carbide Single Crystal Wafer And Manufacturing Method For Same App 20140363607 - Sato; Shinya ; et al.	2014-12-11
Epitaxial silicon carbide single crystal substrate and process for producing the same Grant 8,901,570 - Aigo , et al. December 2, 2	2014-12-02
Epitaxial Silicon Carbide Single Crystal Substrate And Method For Producing Same App 20130320357 - Aigo; Takashi ; et al.	2013-12-05
Production Process Of Epitaxial Silicon Carbide Single Crystal Substrate App 20130217213 - Aigo; Takashi ; et al.	2013-08-22
Epitaxial Silicon Carbide Single Crystal Substrate And Process For Producing The Same App 20130049014 - Aigo; Takashi ; et al.	2013-02-28
Process For Producing Epitaxial Silicon Carbide Single Crystal Substrate And Epitaxial Silicon Carbide Single Crystal Substrate Obtained By The Same App 20130029158 - Aigo; Takashi ; et al.	2013-01-31
Crucible For Producing Single-crystal Silicon Carbide, And Production Apparatus And Production Method For Producing Single-crystal Silicon Carbide App 20110308449 - Katsuno; Masakazu ; et al.	2011-12-22
SiC single-crystal substrate and method of producing SiC single-crystal substrate Grant 8,044,408 - Fujimoto , et al. October 25, 2	2011-10-25
Single-crystal Silicon Carbide And Single-crystal Silicon Carbide Wafer App 20110206929 - Nakabayashi; Masashi ; et al.	2011-08-25
Single-crystal silicon carbide ingot, and substrate and epitaxial wafer obtained therefrom Grant 7,972,704 - Ohtani , et al. July 5, 2	2011-07-05
Sic Single-crystal Substrate And Method Of Producing Sic Single-crystal Substrate App 20100295059 - FUJIMOTO; Tatsuo ; et al.	2010-11-25
Single-crystal Silicon Carbide Ingot, And Substrate And Epitaxial Wafer Obtained Therefrom App 20100289033 - Ohtani; Noboru ; et al.	2010-11-18
Seed crystal consisting of silicon carbide single crystal and method for producing ingot using the same App 20100089311 - Ohtani; Noboru ; et al.	2010-04-15
Seed crystal consisting of silicon carbide single crysatal and method for producing ingot using the same App 20100083897 - Ohtani; Noboru ; et al.	2010-04-08
Low resistivity single crystal silicon carbide wafer App 20100080956 - Fujimoto; Tatsuo ; et al.	2010-04-01
Apparatus For Manufacturing Single-crystal Silicon Carbide App 20090205565 - Nakabayashi; Masashi ; et al.	2009-08-20
Seed crystal consisting of silicon carbide carbide single crystal and method for producing ingot using the same App 20080020212 - Ohtani; Noboru ; et al.	2008-01-24
Seed crystal of silicon carbide single crystal and method for producing ingot using same App 20050160965 - Ohtani, Noboru ; et al.	2005-07-28

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