Kato; Hisaki

Patent Applications and Registrations

Patent applications and USPTO patent grants for Kato; Hisaki.The latest application filed is for "light-emitting semiconductor device using group iii nitrogen compound".

Company Profile

0.35.22

Kato; Hisaki - Tokyo JP
Kato; Hisaki - Nakashima-gun JP
Kato; Hisaki - Aichi-ken JP
Kato; Hisaki - Kariya JP
Kato; Hisaki - Hamamatsu JP
Kato; Hisaki - Kariya-shi JP
Kato; Hisaki - Shizuoka JP
Kato; Hisaki - Hamamatsu-shi JP
Kato; Hisaki - Okazaki JP
Kato, Hisaki - Aichi JP
Kato; Hisaki - Nishikasugai-gun JP
Kato; Hisaki - Toyohashi JP
Kato; Hisaki - Komaki JP
Kato; Hisaki - Nishikasugai JP

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Lower vessel of RH degasser Grant 9,170,052 - Nakamura , et al. October 27, 2	2015-10-27
Light-emitting Semiconductor Device Using Group Iii Nitrogen Compound App 20140239313 - Manabe; Katsuhide ; et al.	2014-08-28
Lower Vessel Of Rh Degasser App 20140015175 - Nakamura; Yoshiyuki ; et al.	2014-01-16
Light-emitting Semiconductor Device Using Group Iii Nitrogen Compound App 20120217510 - Manabe; Katsuhide ; et al.	2012-08-30
Suspension type robot whose robot body runs along traveling rail Grant 8,122,834 - Kato February 28, 2	2012-02-28
Light-emitting semiconductor device using group III nitrogen compound App 20110101412 - Manabe; Katsuhide ; et al.	2011-05-05
Industrial robot Grant 7,922,439 - Kato April 12, 2	2011-04-12
Light-emitting semiconductor device using group III nitrogen compound Grant 7,867,800 - Manabe , et al. January 11, 2	2011-01-11
Spectroscopic device Grant 7,623,243 - Kato November 24, 2	2009-11-24
Suspension type robot whose robot body runs along traveling rail App 20090245992 - Kato; Hisaki	2009-10-01
Industrial robot App 20090155027 - Kato; Hisaki	2009-06-18
Light-emitting semiconductor device using group III nitrogen compound App 20080173880 - Manabe; Katsuhide ; et al.	2008-07-24
Spectroscopic analyzing apparatus Grant 7,403,286 - Kato July 22, 2	2008-07-22
Light-emitting semiconductor device using group III nitrogen compound Grant 7,332,366 - Manabe , et al. February 19, 2	2008-02-19
Photodetector using photomultiplier and gain control method Grant 7,323,674 - Kato , et al. January 29, 2	2008-01-29
Spectroscopic device App 20070121112 - Kato; Hisaki	2007-05-31
Photodetector using photomultiplier and gain control method App 20070040096 - Kato; Hisaki ; et al.	2007-02-22
Spectroscopic analyzing apparatus App 20060279733 - Kato; Hisaki	2006-12-14
Light-emitting semiconductor device using group III nitrogen compound Grant 7,138,286 - Manabe , et al. November 21, 2	2006-11-21
Photomultiplier and photodetector including the same Grant 7,115,854 - Kato , et al. October 3, 2	2006-10-03
Photomultiplier Grant 7,102,284 - Kato , et al. September 5, 2	2006-09-05
Light-emitting semiconductor device using group III nitrogen compound App 20060118821 - Manabe; Katsuhide ; et al.	2006-06-08
Light-emitting semiconductor device using gallium nitride compound semiconductor Grant 7,045,809 - Kato , et al. May 16, 2	2006-05-16
Light-emitting aluminum gallium indium nitride compound semiconductor device having an improved luminous intensity Grant 7,001,790 - Manabe , et al. February 21, 2	2006-02-21
Method for manufacturing a gallium nitride group compound semiconductor Grant 6,984,536 - Manabe , et al. January 10, 2	2006-01-10
LIght-emitting semiconductor device using group III nitrogen compound App 20050224834 - Manabe, Katsuhide ; et al.	2005-10-13
Methods and devices using group III nitride compound semiconductor Grant 6,881,651 - Koide , et al. April 19, 2	2005-04-19
Light-emitting semiconductor device using gallium nitride compound semiconductor Grant 6,853,009 - Kato , et al. February 8, 2	2005-02-08
Method for manufacturing a gallium nitride group compound semiconductor Grant 6,830,992 - Manabe , et al. December 14, 2	2004-12-14
Photomultiplier Grant 6,794,629 - Kato , et al. September 21, 2	2004-09-21
Method for producing group III nitride compounds semiconductor App 20040169192 - Kato, Hisaki ; et al.	2004-09-02
Photomultiplier App 20040100193 - Kato, Hisaki ; et al.	2004-05-27
Photomultiplier App 20040069932 - Kato, Hisaki ; et al.	2004-04-15
Light-emitting semiconductor device using gallium nitride compound semiconductor App 20040026705 - Kato, Hisaki ; et al.	2004-02-12
Methods and devices using group III nitride compound semiconductor Grant 6,617,668 - Koide , et al. September 9, 2	2003-09-09
Light-emitting system with alicyclic epoxy sealing member Grant 6,617,787 - Kato , et al. September 9, 2	2003-09-09
Methods and devices using group III nitride compound semiconductor App 20030155586 - Koide, Norikatsu ; et al.	2003-08-21
Method for producing a light-emitting semiconductor device Grant 6,607,595 - Manabe , et al. August 19, 2	2003-08-19
Light-emitting semiconductor device using gallium nitride compound semiconductor App 20020149024 - Kato, Hisaki ; et al.	2002-10-17
Light-emitting semiconductor device using gallium nitride compound semiconductor Grant 6,423,984 - Kato , et al. July 23, 2	2002-07-23
Method for manufacturing a gallium nitride group compound semiconductor App 20020060326 - Manabe, Katsuhide ; et al.	2002-05-23
Light-emitting semiconductor device using gallium nitride group compound Grant 6,362,017 - Manabe , et al. March 26, 2	2002-03-26
Light-emitting aluminum gallium indium nitride compound semiconductor device having an improved luminous intensity App 20010019849 - Manabe, Katsuhide ; et al.	2001-09-06
Light-emitting aluminum gallium indium nitride compound semiconductor device having an improved luminous intensity Grant 6,265,726 - Manabe , et al. July 24, 2	2001-07-24
Light-emitting system App 20010008484 - Kato, Hisaki ; et al.	2001-07-19
Light emitting semiconductor device using gallium nitride group compound Grant 6,249,012 - Manabe , et al. June 19, 2	2001-06-19
Light-emitting semiconductor device using group III Nitrogen compound having emission layer doped with donor and acceptor impurities Grant 6,005,258 - Manabe , et al. December 21, 1	1999-12-21
Light emitting semiconductor device using nitrogen-Group III compound Grant 5,905,276 - Manabe , et al. May 18, 1	1999-05-18
Semiconductor device having group III nitride compound and enabling control of emission color, and flat display comprising such device Grant 5,650,641 - Sassa , et al. July 22, 1	1997-07-22
Sapphireless group III nitride semiconductor and method for making same Grant 5,620,557 - Manabe , et al. April 15, 1	1997-04-15
Group III nitride compound semiconductor laser diode and method for producing same Grant 5,604,763 - Kato , et al. February 18, 1	1997-02-18
Electron multiplier with improved dynode geometry for reduced crosstalk Grant 5,481,158 - Kato , et al. January 2, 1	1996-01-02
Light-emitting semiconductor device using gallium nitride group compound with double layer structures for the n-layer and/or the i-layer Grant 5,278,433 - Manabe , et al. January 11, 1	1994-01-11
Substrate for growing gallium nitride compound-semiconductor device and light emitting diode Grant 5,122,845 - Manabe , et al. June 16, 1	1992-06-16
Electrochromic elements and methods of manufacturing and driving the same Grant 5,007,718 - Minoura , et al. April 16, 1	1991-04-16