loadpatents
name:-0.016046047210693
name:-0.029131889343262
name:-0.00067400932312012
Katayama; Yoshifumi Patent Filings

Katayama; Yoshifumi

Patent Applications and Registrations

Patent applications and USPTO patent grants for Katayama; Yoshifumi.The latest application filed is for "electrostatic chuck and semiconductor-liquid crystal manufacturing apparatus".

Company Profile
0.14.5
  • Katayama; Yoshifumi - Nagano JP
  • KATAYAMA; Yoshifumi - Nagano-shi JP
  • Katayama; Yoshifumi - Musashimurayama-shi JP
  • Katayama; Yoshifumi - Yamanashi JP
  • Katayama; Yoshifumi - Kitakoma-gun JP
  • Katayama, Yoshifumi - Nakakoma-gun JP
  • Katayama; Yoshifumi - Tokorozawa JP
  • Katayama; Yoshifumi - Tokyo JP
  • Katayama; Yoshifumi - Hachioji JA
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Electrostatic chuck and semiconductor-liquid crystal manufacturing apparatus
Grant 9,887,117 - Katayama , et al. February 6, 2
2018-02-06
Electrostatic Chuck And Semiconductor-liquid Crystal Manufacturing Apparatus
App 20150340261 - KATAYAMA; Yoshifumi ;   et al.
2015-11-26
Method for securing a curved circuit board in die bonder and recording medium containing program for securing a curved circuit board in die bonder
App 20100078125 - Fujino; Noboru ;   et al.
2010-04-01
Method of bonding inner leads to chip pads
Grant 6,898,848 - Ohkubo , et al. May 31, 2
2005-05-31
Wafer ring supplying and returning apparatus
Grant 6,722,840 - Fujisawa , et al. April 20, 2
2004-04-20
Semiconductor integrated circuit manufacturing method and bonding machine used for it
App 20030084563 - Ohkubo, Tatsuyuki ;   et al.
2003-05-08
Wafer ring supplying and returning apparatus
App 20020168256 - Fujisawa, Kazuhiro ;   et al.
2002-11-14
Semiconductor integrated circuit manufacturing method and bonding machine used for it
App 20010027606 - Ohkubo, Tatsuyuki ;   et al.
2001-10-11
Semiconductor device having strained superlattice buffer layers with In-doped GaAs substrate
Grant 4,835,583 - Morioka , et al. May 30, 1
1989-05-30
Semiconductor device having ultrahigh-mobility
Grant 4,796,068 - Katayama , et al. January 3, 1
1989-01-03
Semiconductor laser
Grant 4,759,030 - Murayama , et al. July 19, 1
1988-07-19
Heterojunction FET with doubly-doped channel
Grant 4,673,959 - Shiraki , et al. June 16, 1
1987-06-16
Semiconductor device
Grant 4,605,945 - Katayama , et al. August 12, 1
1986-08-12
Semiconductor device
Grant 4,559,547 - Shiraki , et al. December 17, 1
1985-12-17
Thin film solar cell
Grant 4,433,202 - Maruyama , et al. February 21, 1
1984-02-21
Semiconductor device and method of manufacturing the same
Grant 4,351,856 - Matsui , et al. September 28, 1
1982-09-28
Semiconductor laser device with facet passivation film
Grant 4,337,443 - Umeda , et al. June 29, 1
1982-06-29
Light-sensitive film
Grant 4,289,822 - Shimada , et al. September 15, 1
1981-09-15
Mos-fet Infrared Detector
Grant 3,665,190 - Kotera , et al. May 23, 1
1972-05-23

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