Katayama; Masatake
Patent Applications and Registrations
Patent applications and USPTO patent grants for Katayama; Masatake.The latest application filed is for "method of chemical vapor deposition".
- Katayama; Masatake - Gunma-ken JP
- Katayama; Masatake - Tokyo JP
- Katayama; Masatake - Takasaki JP
- Katayama; Masatake - Gunma JP
| Patent | Date |
|---|---|
| Method of chemical vapor deposition Grant 6,254,933 - Habuka , et al. July 3, 2 | 2001-07-03 |
| Method for smoothing surface of silicon single crystal substrate Grant 6,008,128 - Habuka , et al. December 28, 1 | 1999-12-28 |
| SOI wafer and method for the preparation thereof Grant 5,998,281 - Aga , et al. December 7, 1 | 1999-12-07 |
| Method for vapor phase growth Grant 5,938,840 - Habuka , et al. August 17, 1 | 1999-08-17 |
| Method for vapor phase growth Grant 5,755,878 - Habuka , et al. May 26, 1 | 1998-05-26 |
| Method of chemical vapor deposition and reactor therefor Grant 5,749,974 - Habuka , et al. May 12, 1 | 1998-05-12 |
| Method of estimating quantity of boron at bonding interface in bonded wafer Grant 5,538,904 - Mitani , et al. July 23, 1 | 1996-07-23 |
| Method of making bonded wafers Grant 5,514,235 - Mitani , et al. May 7, 1 | 1996-05-07 |
| Method and apparatus for production of extremely thin SOI film substrate Grant 5,427,052 - Ohta , et al. * June 27, 1 | 1995-06-27 |
| Dielectrically isolated substrate and a process for producing the same Grant 5,336,634 - Katayama , et al. August 9, 1 | 1994-08-09 |
| Method of fabricating SOI substrate with uniform thin silicon film Grant 5,240,883 - Abe , et al. August 31, 1 | 1993-08-31 |
| Method for controlling thickness of single crystal thin-film layer in SOI substrate Grant 5,223,080 - Ohta , et al. June 29, 1 | 1993-06-29 |
| Method for production of dielectric-separation substrate Grant 5,183,783 - Ohta , et al. February 2, 1 | 1993-02-02 |
| Method for production of dielectric-separation substrate Grant 5,124,274 - Ohki , et al. June 23, 1 | 1992-06-23 |
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