Karve; Gauri

Patent Applications and Registrations

Patent applications and USPTO patent grants for Karve; Gauri.The latest application filed is for "semiconductor device and method of forming the semiconductor device".

Company Profile

44.57.59

Karve; Gauri - Cohoes NY
Karve; Gauri - Tervuren BE
Karve; Gauri - Albany NY
Karve; Gauri - Fishkill NY

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Bilayer hardmask for direct print lithography Grant 11,398,377 - Joseph , et al. July 26, 2	2022-07-26
Semiconductor Device And Method Of Forming The Semiconductor Device App 20220140074 - Bergendahl; Marc Adam ; et al.	2022-05-05
Semiconductor device and method of forming the semiconductor device Grant 11,239,316 - Bergendahl , et al. February 1, 2	2022-02-01
Method for Processing a Laser Device App 20210384700 - Caer; Charles ; et al.	2021-12-09
Semiconductor Device And Method Of Forming The Semiconductor Device App 20210376078 - BERGENDAHL; Marc Adam ; et al.	2021-12-02
Cognitive system for automatic risk assessment, solution identification, and action enablement Grant 11,182,722 - Hubbard , et al. November 23, 2	2021-11-23
Sublithography Gate Cut Physical Unclonable Function App 20210320190 - Cheng; Kangguo ; et al.	2021-10-14
Physical Unclonable Function App 20210320070 - Cheng; Kangguo ; et al.	2021-10-14
Semiconductor device and method of forming the semiconductor device Grant 11,127,815 - Bergendahl , et al. September 21, 2	2021-09-21
Transistor gate having tapered segments positioned above the fin channel Grant 11,075,299 - Miller , et al. July 27, 2	2021-07-27
Bilayer Hardmask For Direct Print Lithography App 20210217624 - Joseph; Praveen ; et al.	2021-07-15
Substrate Isolated Vtfet Devices App 20210217669 - Miller; Eric ; et al.	2021-07-15
Structure and method for equal substrate to channel height between N and P fin-FETs Grant 11,043,494 - Clevenger , et al. June 22, 2	2021-06-22
Integration of input/output device in vertical field-effect transistor technology Grant 10,964,812 - Liu , et al. March 30, 2	2021-03-30
Sub-fin removal for SOI like isolation with uniform active fin height Grant 10,937,810 - Bergendahl , et al. March 2, 2	2021-03-02
Postal Mail Assessment System and Method App 20210019850 - LEVRAU; Elisabeth ; et al.	2021-01-21
Transistor Gate Having Tapered Segments Positioned Above The Fin Channel App 20210005749 - Miller; Eric ; et al.	2021-01-07
Integration of input/output device in vertical field-effect transistor technology Grant 10,840,373 - Liu , et al. November 17, 2	2020-11-17
Techniques to improve critical dimension width and depth uniformity between features with different layout densities Grant 10,832,945 - Saulnier , et al. November 10, 2	2020-11-10
Super long channel device within VFET architecture Grant 10,833,190 - Bergendahl , et al. November 10, 2	2020-11-10
Nanosheet transistor barrier for electrically isolating the substrate from the source or drain regions Grant 10,818,751 - Ebrish , et al. October 27, 2	2020-10-27
Utilizing multilayer gate spacer to reduce erosion of semiconductor Fin during spacer patterning Grant 10,790,393 - Greene , et al. September 29, 2	2020-09-29
Cognitive System For Automatic Risk Assessment, Solution Identification, And Action Enablement App 20200302352 - Hubbard; Alex Richard ; et al.	2020-09-24
Nanosheet Transistor Barrier For Electrically Isolating The Substrate From The Source Or Drain Regions App 20200279913 - Ebrish; Mona A. ; et al.	2020-09-03
Techniques to Improve Critical Dimension Width and Depth Uniformity Between Features with Different Layout Densities App 20200266100 - Saulnier; Nicole ; et al.	2020-08-20
Nanosheet substrate to source/drain isolation Grant 10,734,523 - Lie , et al.	2020-08-04
Magnetoresistive random access memory thin film transistor unit cell Grant 10,727,273 - Joseph , et al.	2020-07-28
Elevator Analytics Facilitating Passenger Destination Prediction And Resource Optimization App 20200130983 - Karve; Gauri ; et al.	2020-04-30
Magnetoresistive Random Access Memory Thin Film Transistor Unit Cell App 20200119093 - JOSEPH; Praveen ; et al.	2020-04-16
Dielectric gap fill evaluation for integrated circuits Grant 10,622,250 - Chu , et al.	2020-04-14
Integration of input/output device in vertical field-effect transistor technology Grant 10,615,276 - Liu , et al.	2020-04-07
Preventing strained fin relaxation Grant 10,615,278 - Cheng , et al.	2020-04-07
Integration Of Input/output Device In Vertical Field-effect Transistor Technology App 20200066906 - Liu; Xuefeng ; et al.	2020-02-27
Super long channel device within VFET architecture Grant 10,573,745 - Bergendahl , et al. Feb	2020-02-25
Nanosheet Substrate To Source/drain Isolation App 20200052107 - Lie; Fee Li ; et al.	2020-02-13
Integration Of Input/output Device In Vertical Field-effect Transistor Technology App 20200013891 - Liu; Xuefeng ; et al.	2020-01-09
Sub-Fin Removal for SOI Like Isolation with Uniform Active Fin Height App 20190371822 - Bergendahl; Marc A. ; et al.	2019-12-05
Super Long Channel Device Within Vfet Architecture App 20190341490 - Bergendahl; Marc A. ; et al.	2019-11-07
Structure And Method For Equal Substrate To Channel Height Between N And P Fin-fets App 20190326289 - CLEVENGER; Lawrence A. ; et al.	2019-10-24
Sub-fin removal for SOI like isolation with uniform active fin height Grant 10,438,972 - Bergendahl , et al. O	2019-10-08
Super long channel device within VFET architecture Grant 10,424,663 - Bergendahl , et al. Sept	2019-09-24
Semiconductor Device And Method Of Forming The Semiconductor Device App 20190259832 - BERGENDAHL; Marc Adam ; et al.	2019-08-22
Semiconductor Device And Method Of Forming The Semiconductor Device App 20190259833 - BERGENDAHL; Marc Adam ; et al.	2019-08-22
Semiconductor device and method of forming the semiconductor device Grant 10,381,437 - Bergendahl , et al. A	2019-08-13
Structure and method for equal substrate to channel height between N and P fin-FETs Grant 10,381,348 - Clevenger , et al. A	2019-08-13
Vertical transport FET with two or more gate lengths Grant 10,361,127 - Karve , et al.	2019-07-23
Vertical Transport Fet With Two Or More Gate Lengths App 20190206738 - Karve; Gauri ; et al.	2019-07-04
Integration Of Input/output Device In Vertical Field-effect Transistor Technology App 20190198667 - Liu; Xuefeng ; et al.	2019-06-27
Dielectric Gap Fill Evaluation For Integrated Circuits App 20190189503 - Chu; Isabel Cristina ; et al.	2019-06-20
Dielectric Gap Fill Evaluation For Integrated Circuits App 20190189504 - Chu; Isabel Cristina ; et al.	2019-06-20
Utilizing Multilayer Gate Spacer To Reduce Erosion Of Semiconductor Fin During Spacer Patterning App 20190172940 - Greene; Andrew M. ; et al.	2019-06-06
Dielectric gap fill evaluation for integrated circuits Grant 10,312,140 - Chu , et al.	2019-06-04
Margin for fin cut using self-aligned triple patterning Grant 10,304,689 - Karve , et al.	2019-05-28
Utilizing multilayer gate spacer to reduce erosion of semiconductor fin during spacer patterning Grant 10,243,079 - Greene , et al.	2019-03-26
Separate N and P fin etching for reduced CMOS device leakage Grant 10,229,910 - Chu , et al.	2019-03-12
Stress retention in fins of fin field-effect transistors Grant 10,211,321 - Kanakasabapathy , et al. Feb	2019-02-19
Stress retention in fins of fin field-effect transistors Grant 10,211,319 - Kanakasabapathy , et al. Feb	2019-02-19
Under-channel gate transistors Grant 10,199,503 - Bergendahl , et al. Fe	2019-02-05
Utilizing Multilayer Gate Spacer To Reduce Erosion Of Semiconductor Fin During Spacer Patterning App 20190006506 - Greene; Andrew M. ; et al.	2019-01-03
Forming MOSFET structures with work function modification Grant 10,170,477 - Bao , et al. J	2019-01-01
Forming MOSFET structures with work function modification Grant 10,147,725 - Bao , et al. De	2018-12-04
Super Long Channel Device Within Vfet Architecture App 20180342615 - Bergendahl; Marc A. ; et al.	2018-11-29
Super Long Channel Device Within Vfet Architecture App 20180342614 - Bergendahl; Marc A. ; et al.	2018-11-29
Structure and process to tuck fin tips self-aligned to gates Grant 10,121,853 - Doris , et al. November 6, 2	2018-11-06
Structure and process to tuck fin tips self-aligned to gates Grant 10,121,852 - Doris , et al. November 6, 2	2018-11-06
Under-channel Gate Transistors App 20180308978 - Bergendahl; Marc A. ; et al.	2018-10-25
FinFET device having a high germanium content fin structure and method of making same Grant 10,062,714 - Doris , et al. August 28, 2	2018-08-28
Margin For Fin Cut Using Self-aligned Triple Patterning App 20180226262 - KARVE; Gauri ; et al.	2018-08-09
Strained finFET device fabrication Grant 10,032,680 - Doris , et al. July 24, 2	2018-07-24
Channel replacement and bimodal doping scheme for bulk finFet threshold voltage modulation with reduced performance penalty Grant 10,032,885 - Karve , et al. July 24, 2	2018-07-24
Structure And Method For Equal Substrate To Channel Height Between N And P Fin-fets App 20180197858 - CLEVENGER; Lawrence A. ; et al.	2018-07-12
Margin for fin cut using self-aligned triple patterning Grant 9,997,369 - Karve , et al. June 12, 2	2018-06-12
Semiconductor Device And Method Of Forming The Semiconductor Device App 20180122947 - Bergendahl; Marc Adam ; et al.	2018-05-03
Stress Retention In Fins Of Fin Field-effect Transistors App 20180108752 - Kanakasabapathy; Sivananda K. ; et al.	2018-04-19
Separate N And P Fin Etching For Reduced Cmos Device Leakage App 20180097002 - Chu; Isabel C. ; et al.	2018-04-05
Margin For Fin Cut Using Self-aligned Triple Patterning App 20180090335 - KARVE; Gauri ; et al.	2018-03-29
Sub-Fin Removal for SOI Like Isolation with Uniform Active Fin Height App 20180076225 - Bergendahl; Marc A. ; et al.	2018-03-15
Semiconductor device and method of forming the semiconductor device Grant 9,917,196 - Bergendahl , et al. March 13, 2	2018-03-13
Strained FinFET device fabrication Grant 9,917,019 - Doris , et al. March 13, 2	2018-03-13
Preventing Strained Fin Relaxation App 20180069027 - Cheng; Kangguo ; et al.	2018-03-08
Structure And Process To Tuck Fin Tips Self-aligned To Gates App 20180061942 - Doris; Bruce B. ; et al.	2018-03-01
Structure And Process To Tuck Fin Tips Self-aligned To Gates App 20180061941 - Doris; Bruce B. ; et al.	2018-03-01
Method, Apparatus, And System For Reducing Dopant Concentrations In Channel Regions Of Finfet Devices App 20180033789 - Bentley; Steven ; et al.	2018-02-01
Preventing strained fin relaxation Grant 9,881,937 - Cheng , et al. January 30, 2	2018-01-30
Structure and process to tuck fin tips self-aligned to gates Grant 9,876,074 - Doris , et al. January 23, 2	2018-01-23
Strained finFET device fabrication Grant 9,805,991 - Doris , et al. October 31, 2	2017-10-31
Strained finFET device fabrication Grant 9,805,992 - Doris , et al. October 31, 2	2017-10-31
Stress Retention In Fins Of Fin Field-effect Transistors App 20170301770 - Kanakasabapathy; Sivananda K. ; et al.	2017-10-19
Retaining strain in finFET devices Grant 9,793,402 - Doris , et al. October 17, 2	2017-10-17
Stress retention in fins of fin field-effect transistors Grant 9,741,856 - Kanakasabapathy , et al. August 22, 2	2017-08-22
Channel replacement and bimodal doping scheme for bulk finFET threshold voltage modulation with reduced performance penalty Grant 9,735,275 - Karve , et al. August 15, 2	2017-08-15
Retaining strain in finFET devices Grant 9,728,642 - Doris , et al. August 8, 2	2017-08-08
Cutting fins and gates in CMOS devices Grant 9,721,848 - Bu , et al. August 1, 2	2017-08-01
Separate N and P fin etching for reduced CMOS device leakage Grant 9,711,507 - Chu , et al. July 18, 2	2017-07-18
Channel Replacement And Bimodal Doping Scheme For Bulk Finfet Threshold Voltage Modulation With Reduced Performance Penalty App 20170179274 - Karve; Gauri ; et al.	2017-06-22
Channel Replacement And Bimodal Doping Scheme For Bulk Finfet Threshold Voltage Modulation With Reduced Performance Penalty App 20170179254 - Karve; Gauri ; et al.	2017-06-22
Stress Retention In Fins Of Fin Field-effect Transistors App 20170162685 - Kanakasabapathy; Sivananda K. ; et al.	2017-06-08
Forming Mosfet Structures With Work Function Modification App 20170133272 - BAO; RUQIANG ; et al.	2017-05-11
Forming Mosfet Structures With Work Function Modification App 20170133372 - BAO; RUQIANG ; et al.	2017-05-11
Retaining Strain In Finfet Devices App 20170125577 - Doris; Bruce B. ; et al.	2017-05-04
Retaining Strain In Finfet Devices App 20170125590 - Doris; Bruce B. ; et al.	2017-05-04
Preventing Strained Fin Relaxation App 20170117300 - Cheng; Kangguo ; et al.	2017-04-27
Strained Finfet Device Fabrication App 20170054002 - Doris; Bruce B. ; et al.	2017-02-23
Strained Finfet Device Fabrication App 20170053838 - Doris; Bruce B. ; et al.	2017-02-23
Strained Finfet Device Fabrication App 20170053942 - Doris; Bruce B. ; et al.	2017-02-23
Strained Finfet Device Fabrication App 20170054024 - Doris; Bruce B. ; et al.	2017-02-23
Preventing strained fin relaxation by sealing fin ends Grant 9,576,979 - Cheng , et al. February 21, 2	2017-02-21
FinFET device with channel strain Grant 9,515,141 - Doris , et al. December 6, 2	2016-12-06
Preventing Strained Fin Relaxation App 20160351590 - Cheng; Kangguo ; et al.	2016-12-01
Structure And Process To Tuck Fin Tips Self-aligned To Gates App 20160343861 - Doris; Bruce B. ; et al.	2016-11-24
Strained finFET device fabrication Grant 9,502,411 - Doris , et al. November 22, 2	2016-11-22
Channel protection during fin fabrication Grant 9,496,371 - Arndt , et al. November 15, 2	2016-11-15
Finfet Device Having A High Germanium Content Fin Structure And Method Of Making Same App 20160293638 - Doris; Bruce ; et al.	2016-10-06
FinFET device having a high germanium content fin structure and method of making same Grant 9,431,514 - Liu , et al. August 30, 2	2016-08-30
Finfet Device Having A High Germanium Content Fin Structure And Method Of Making Same App 20160181395 - Liu; Qing ; et al.	2016-06-23
FinFET device with channel strain Grant 9,331,148 - Doris , et al. May 3, 2	2016-05-03

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