| Patent | Date |
|---|
Memory Devices Including Void Spaces Between Transistor Features, And Related Semiconductor Devices And Electronic Systems
App 20220302317 - Karda; Kamal M. ; et al. | 2022-09-22 |
Array Of Vertical Transistors
App 20220301941 - Pandey; Deepak Chandra ; et al. | 2022-09-22 |
Vertically Separated Storage Nodes And Access Devices For Semiconductor Devices
App 20220278105 - Karda; Kamal M. ; et al. | 2022-09-01 |
Memory Device Having 2-transistor Vertical Memory Cell And Shield Structures
App 20220278112 - Karda; Kamal M. ; et al. | 2022-09-01 |
Transistors including oxide semiconductive materials, and related microelectronic devices, memory devices, electronic systems, and methods
Grant 11,430,895 - Karda , et al. August 30, 2 | 2022-08-30 |
Programmable charge-storage transistor, an array of elevationally-extending strings of memory cells, and a method of forming an array of elevationally-extending strings of memory cells
Grant 11,424,363 - Liu , et al. August 23, 2 | 2022-08-23 |
Integrated Assemblies Having Transistor Body Regions Coupled to Carrier-Sink-Structures; and Methods of Forming Integrated Assemblies
App 20220262813 - Karda; Kamal M. ; et al. | 2022-08-18 |
Vertical transistors with channel region having vertically elongated crystal grains that individually are directly against both of the top and bottom source/drain regions
Grant 11,417,730 - Nahar , et al. August 16, 2 | 2022-08-16 |
Integrated assemblies
Grant 11,411,118 - Pulugurtha , et al. August 9, 2 | 2022-08-09 |
Access devices formed with conductive contacts
Grant 11,393,928 - Liu , et al. July 19, 2 | 2022-07-19 |
Memory Device Having Shared Access Line For 2-transistor Vertical Memory Cell
App 20220223605 - Karda; Kamal M. ; et al. | 2022-07-14 |
Vertical 3d Single Word Line Gain Cell With Shared Read/write Bit Line
App 20220208256 - Karda; Kamal M. ; et al. | 2022-06-30 |
Method of forming an array of vertical transistors
Grant 11,373,913 - Pandey , et al. June 28, 2 | 2022-06-28 |
Integrated assemblies having transistor body regions coupled to carrier-sink-structures; and methods of forming integrated assemblies
Grant 11,348,932 - Karda , et al. May 31, 2 | 2022-05-31 |
Memory device having 2-transistor memory cell and access line plate
Grant 11,335,684 - Karda , et al. May 17, 2 | 2022-05-17 |
Vertical Three-dimensional Memory With Vertical Channel
App 20220149046 - Karda; Kamal M. ; et al. | 2022-05-12 |
Memory Cells
App 20220122998 - Karda; Kamal M. ; et al. | 2022-04-21 |
Apparatuses having memory cells with two transistors and one capacitor, and having body regions of the transistors coupled with reference voltages
Grant 11,302,703 - Karda , et al. April 12, 2 | 2022-04-12 |
Memory device having shared access line for 2-transistor vertical memory cell
Grant 11,296,094 - Karda , et al. April 5, 2 | 2022-04-05 |
Integrated Assemblies
App 20220077320 - Pulugurtha; Srinivas ; et al. | 2022-03-10 |
Integrated Assemblies Containing Two-Dimensional Materials
App 20220069124 - Karda; Kamal M. ; et al. | 2022-03-03 |
Field Effect Transistor Constructions And Methods Of Programming Field Effect Transistors To One Of At Least Three Different Programmed States
App 20220068343 - Karda; Kamal M. ; et al. | 2022-03-03 |
Metal Insulator Semiconductor (mis) Contact In Three Dimensional (3d) Vertical Memory
App 20220068929 - Karda; Kamal M. ; et al. | 2022-03-03 |
Channel Formation For Vertical Three Dimensional (3d) Memory
App 20220068927 - Karda; Kamal M. ; et al. | 2022-03-03 |
Transistors comprising an electrolyte, semiconductor devices, electronic systems, and related methods
Grant 11,257,962 - Gao , et al. February 22, 2 | 2022-02-22 |
Channel Conduction In Semiconductor Devices
App 20220045165 - Karda; Kamal M. ; et al. | 2022-02-10 |
Memory cells
Grant 11,244,951 - Karda , et al. February 8, 2 | 2022-02-08 |
Apparatuses Comprising Vertical Transistors Having Gate Electrodes At Least Partially Recessed Within Channel Regions, And Related Methods And Systems
App 20220029015 - Simsek-Ege; Fatma Arzum ; et al. | 2022-01-27 |
Array Of Vertical Transistors And Method Used In Forming An Array Of Vertical Transistors
App 20220028903 - Lee; Yi Fang ; et al. | 2022-01-27 |
Vertical 3D single word line gain cell with shared read/write bit line
Grant 11,222,690 - Karda , et al. January 11, 2 | 2022-01-11 |
Transistors, memory structures and memory arrays containing two-dimensional materials between a source/drain region and a channel region
Grant 11,211,487 - Karda , et al. December 28, 2 | 2021-12-28 |
Devices Including Vertical Transistors, And Related Methods
App 20210391461 - Karda; Kamal M. ; et al. | 2021-12-16 |
Transistors Including Oxide Semiconductive Materials, And Related Microelectronic Devices, Memory Devices, Electronic Systems, And Methods
App 20210384354 - Karda; Kamal M. ; et al. | 2021-12-09 |
Microelectronic Devices Including Two-dimensional Materials, And Related Memory Devices And Electronic Systems
App 20210375893 - Karda; Kamal M. ; et al. | 2021-12-02 |
Integrated Assemblies Comprising Hydrogen Diffused Within Two or More Different Semiconductor Materials, and Methods of Forming Integrated Assemblies
App 20210375868 - Karda; Kamal M. ; et al. | 2021-12-02 |
Single Word Line Gain Cell With Complementary Read Write Channel
App 20210358538 - Karda; Kamal M. ; et al. | 2021-11-18 |
Integrated assemblies having threshold-voltage-inducing-structures proximate gated-channel-regions, and methods of forming integrated assemblies
Grant 11,177,265 - Karda , et al. November 16, 2 | 2021-11-16 |
Channel conduction in semiconductor devices
Grant 11,171,206 - Karda , et al. November 9, 2 | 2021-11-09 |
Field effect transistor constructions with gate insulator having local regions radially there-through that have different capacitance at different circumferential locations relative to a channel core periphery
Grant 11,170,835 - Karda , et al. November 9, 2 | 2021-11-09 |
Integrated assemblies having ferroelectric transistors with heterostructure active regions
Grant 11,164,889 - Karda , et al. November 2, 2 | 2021-11-02 |
Devices including vertical transistors, and related methods
Grant 11,139,396 - Karda , et al. October 5, 2 | 2021-10-05 |
Transistors including two-dimensional materials
Grant 11,127,747 - Karda , et al. September 21, 2 | 2021-09-21 |
Integrated assemblies comprising hydrogen diffused within two or more different semiconductor materials, and methods of forming integrated assemblies
Grant 11,107,817 - Karda , et al. August 31, 2 | 2021-08-31 |
Integrated Assemblies Having Polycrystalline First Semiconductor Material Adjacent Conductively-Doped Second Semiconductor Material
App 20210265467 - Karda; Kamal M. ; et al. | 2021-08-26 |
Devices And Systems With String Drivers Including High Band Gap Material And Methods Of Formation
App 20210265499 - Liu; Haitao ; et al. | 2021-08-26 |
Integrated Assemblies Having Ferroelectric Transistors with Heterostructure Active Regions
App 20210242221 - Karda; Kamal M. ; et al. | 2021-08-05 |
Single word line gain cell with complementary read write channel
Grant 11,043,260 - Karda , et al. June 22, 2 | 2021-06-22 |
Semiconductor Devices, Hybrid Transistors, And Related Methods
App 20210183951 - Karda; Kamal M. ; et al. | 2021-06-17 |
Programmable Charge-Storage Transistor, An Array Of Elevationally-Extending Strings Of Memory Cells, And A Method Of Forming An Array Of Elevationally-Extending Strings Of Memory Cells
App 20210184044 - Liu; Haitao ; et al. | 2021-06-17 |
Integrated assemblies having polycrystalline first semiconductor material adjacent conductively-doped second semiconductor material
Grant 11,038,027 - Karda , et al. June 15, 2 | 2021-06-15 |
Devices and systems with string drivers including high band gap material and methods of formation
Grant 11,018,255 - Liu , et al. May 25, 2 | 2021-05-25 |
Microelectronic Devices Including Passivation Materials, Related Electronic Devices, And Related Methods
App 20210143284 - Karda; Kamal M. ; et al. | 2021-05-13 |
Driver Placement In Memories Having Stacked Memory Arrays
App 20210134825 - Liu; Haitao ; et al. | 2021-05-06 |
Integrated assemblies having ferroelectric transistors with heterostructure active regions
Grant 10,998,338 - Karda , et al. May 4, 2 | 2021-05-04 |
Device including a vertical transistor having a large band gap channel material and void spaces adjacent gate electrodes, and related methods and systems
Grant 10,998,440 - Karda , et al. May 4, 2 | 2021-05-04 |
Integrated memory having the body region comprising a different semiconductor composition than the source/drain region
Grant 10,943,915 - Karda , et al. March 9, 2 | 2021-03-09 |
Semiconductor devices, hybrid transistors, and related methods
Grant 10,943,953 - Karda , et al. March 9, 2 | 2021-03-09 |
Memory Device Having 2-transistor Vertical Memory Cell And A Common Plate
App 20210066301 - Karda; Kamal M. ; et al. | 2021-03-04 |
Memory Device Having 2-transistor Memory Cell And Access Line Plate
App 20210066298A1 - | 2021-03-04 |
Memory Device Having 2-transistor Vertical Memory Cell And Shield Structures
App 20210066302 - Karda; Kamal M. ; et al. | 2021-03-04 |
Array Of Vertical Transistors And Method Of Forming An Array Of Vertical Transistors
App 20210066135 - Pandey; Deepak Chandra ; et al. | 2021-03-04 |
Memory Device Having 2-transistor Vertical Memory Cell And A Common Plate
App 20210066196 - Karda; Kamal M. ; et al. | 2021-03-04 |
Ferroelectric Transistors and Assemblies Comprising Ferroelectric Transistors
App 20210066502 - Karda; Kamal M. ; et al. | 2021-03-04 |
Integrated Memory Having The Body region Comprising a Different Semiconductor Composition Than The Source/Drain Region
App 20210066328 - Karda; Kamal M. ; et al. | 2021-03-04 |
Memory Device Having 2-transistor Vertical Memory Cell And Shared Channel Region
App 20210066300 - Sarpatwari; Karthik ; et al. | 2021-03-04 |
Memory cells and arrays of elevationally-extending strings of memory cells
Grant 10,937,482 - Sharma , et al. March 2, 2 | 2021-03-02 |
Programmable charge-storage transistor, an array of elevationally-extending strings of memory cells, and a method of forming an array of elevationally-extending strings of memory cells
Grant 10,937,904 - Liu , et al. March 2, 2 | 2021-03-02 |
Transistors Including Two-dimensional Materials, And Related Microelectronic Devices, Memory Devices, And Electronic Systems
App 20210057424 - Karda; Kamal M. ; et al. | 2021-02-25 |
Integrated Assemblies Containing Two-Dimensional Materials
App 20210050443 - Karda; Kamal M. ; et al. | 2021-02-18 |
Transistor And Methods Of Forming Transistors
App 20210043731 - Nahar; Manuj ; et al. | 2021-02-11 |
Gate Noble Metal Nanoparticles
App 20210035979 - Simsek-Ege; Fatma Arzum ; et al. | 2021-02-04 |
Driver placement in memories having stacked memory arrays
Grant 10,903,223 - Liu , et al. January 26, 2 | 2021-01-26 |
Channel Conduction In Semiconductor Devices
App 20210013305 - Karda; Kamal M. ; et al. | 2021-01-14 |
Access Devices Formed With Conductive Contacts
App 20200388712 - Liu; Haitao ; et al. | 2020-12-10 |
Integrated Assemblies Having Ferroelectric Transistors with Body Regions Coupled to Carrier Reservoirs; and Methods of Forming Integrated Assemblies
App 20200365606 - Karda; Kamal M. ; et al. | 2020-11-19 |
Transistors Comprising An Electrolyte, Semiconductor Devices, Electronic Systems, And Related Methods
App 20200350440 - Gao; Yunfei ; et al. | 2020-11-05 |
Memory Cells
App 20200350323 - Karda; Kamal M. ; et al. | 2020-11-05 |
Recessed access devices and DRAM constructions
Grant 10,825,816 - Gao , et al. November 3, 2 | 2020-11-03 |
Gate noble metal nanoparticles
Grant 10,818,666 - Simsek-Ege , et al. October 27, 2 | 2020-10-27 |
Integrated Assemblies Comprising Hydrogen Diffused Within Two or More Different Semiconductor Materials, and Methods of Forming Integrated Assemblies
App 20200295005 - Karda; Kamal M. ; et al. | 2020-09-17 |
Integrated Assemblies Having Transistor Body Regions Coupled To Carrier-sink-structures; And Methods Of Forming Integrated Assem
App 20200286906 - Karda; Kamal M. ; et al. | 2020-09-10 |
Methods Of Forming Integrated Assemblies
App 20200286899 - Pandey; Deepak Chandra ; et al. | 2020-09-10 |
Integrated Assemblies Having Polycrystalline First Semiconductor Material Adjacent Conductively-Doped Second Semiconductor Mater
App 20200287003 - Karda; Kamal M. ; et al. | 2020-09-10 |
Gate Noble Metal Nanoparticles
App 20200286893 - Simsek-Ege; Arzum F. ; et al. | 2020-09-10 |
Methods of forming integrated assemblies
Grant 10,756,093 - Pandey , et al. A | 2020-08-25 |
Access devices formed with conductive contacts
Grant 10,756,217 - Liu , et al. A | 2020-08-25 |
Integrated assemblies having ferroelectric transistors with body regions coupled to carrier reservoirs
Grant 10,748,931 - Karda , et al. A | 2020-08-18 |
Integrated Assemblies Having Threshold-Voltage-Inducing-Structures Proximate Gated-Channel-Regions, and Methods of Forming Integ
App 20200258887 - A1 | 2020-08-13 |
Memory cells
Grant 10,741,567 - Karda , et al. A | 2020-08-11 |
Integrated assemblies having threshold-voltage-inducing-structures proximate gated-channel-regions, and methods of forming integrated assemblies
Grant 10,734,388 - Karda , et al. | 2020-08-04 |
Driver Placement In Memories Having Stacked Memory Arrays
App 20200227428 - Liu; Haitao ; et al. | 2020-07-16 |
Integrated Assemblies Having Threshold-Voltage-Inducing-Structures Proximate Gated-Channel-Regions, and Methods of Forming Integ
App 20200227417 - Karda; Kamal M. ; et al. | 2020-07-16 |
Vertical 2-transistor Memory Cell
App 20200212045 - Karda; Kamal M. ; et al. | 2020-07-02 |
Memory Device Having Shared Access Line For 2-transistor Vertical Memory Cell
App 20200212051 - Karda; Kamal M. ; et al. | 2020-07-02 |
Single Word Line Gain Cell With Complementary Read Write Channel
App 20200211629 - Karda; Kamal M. ; et al. | 2020-07-02 |
Memory Device Having Shared Read/write Data Line For 2-transistor Vertical Memory Cell
App 20200211602 - Karda; Kamal M. ; et al. | 2020-07-02 |
Vertical 3d Single Word Line Gain Cell With Shared Read/write Bit Line
App 20200211631 - Karda; Kamal M. ; et al. | 2020-07-02 |
Memory Device Having Shared Read/write Access Line For 2-transistor Vertical Memory Cell
App 20200211615 - Sarpatwari; Karthik ; et al. | 2020-07-02 |
Apparatuses Having Memory Cells with Two Transistors and One Capacitor, and Having Body Regions of the Transistors Coupled with
App 20200203338 - Karda; Kamal M. ; et al. | 2020-06-25 |
Memory cells having a controlled conductivity region
Grant 10,665,593 - Sandhu , et al. | 2020-05-26 |
Integrated Assemblies Having Ferroelectric Transistors with Heterostructure Active Regions
App 20200152644 - Karda; Kamal M. ; et al. | 2020-05-14 |
Transistors Including Heterogeneous Channels, And Related Devices, Memory Devices, Electronic Systems, And Methods
App 20200111908 - Sills; Scott E. ; et al. | 2020-04-09 |
Devices Including Vertical Transistors, And Related Methods And Electronic Systems
App 20200111907 - Karda; Kamal M. ; et al. | 2020-04-09 |
Devices Including Vertical Transistors, And Related Methods
App 20200111916 - Karda; Kamal M. ; et al. | 2020-04-09 |
Devices Including Vertical Transistors, And Related Methods And Electronic Systems
App 20200111919 - Karda; Kamal M. ; et al. | 2020-04-09 |
Semiconductor Devices Comprising Transistors Having Increased Threshold Voltage And Related Methods And Systems
App 20200111918 - Karda; Kamal M. ; et al. | 2020-04-09 |
Apparatuses having memory cells with two transistors and one capacitor, and having body regions of the transistors coupled with reference voltages
Grant 10,607,988 - Karda , et al. | 2020-03-31 |
Integrated Assemblies Having Ferroelectric Transistors with Body Regions Coupled to Carrier Reservoirs; and Methods of Forming I
App 20190348424 - Karda; Kamal M. ; et al. | 2019-11-14 |
Memory Cells And Arrays Of Elevationally-Extending Strings Of Memory Cells
App 20190311756 - Sharma; Ankit ; et al. | 2019-10-10 |
Memory Cells
App 20190279986 - Sandhu; Gurtej S. ; et al. | 2019-09-12 |
Memory cells having a controlled-conductivity region
Grant 10,396,082 - Sandhu , et al. A | 2019-08-27 |
Apparatuses Having Memory Cells with Two Transistors and One Capacitor, and Having Body Regions of the Transistors Coupled with
App 20190259769 - Karda; Kamal M. ; et al. | 2019-08-22 |
Transistors and methods of forming transistors
Grant 10,388,864 - Karda , et al. A | 2019-08-20 |
Access Devices Formed With Conductive Contacts
App 20190252553 - Liu; Haitao ; et al. | 2019-08-15 |
Apparatuses having memory cells with two transistors and one capacitor, and having body regions of the transistors coupled with reference voltages
Grant 10,381,357 - Karda , et al. A | 2019-08-13 |
Recessed Access Devices And DRAM Constructions
App 20190206870 - Gao; Yunfei ; et al. | 2019-07-04 |
Programmable Charge Storage Transistor, An Array Of Elevationally Extending Strings Of Memory Cells, And A Method Of Forming An
App 20190198673 - Liu; Haitao ; et al. | 2019-06-27 |
Memory Cells
App 20190189626 - Karda; Kamal M. ; et al. | 2019-06-20 |
Vertical ferroelectric field effect transistor constructions, constructions comprising a pair of vertical ferroelectric field effect transistors, vertical strings of ferroelectric field effect transistors, and vertical strings of laterally opposing pairs of vertical ferroelectric field effect transi
Grant 10,297,612 - Karda , et al. | 2019-05-21 |
Apparatuses Having Memory Cells with Two Transistors and One Capacitor, and Having Body Regions of the Transistors Coupled with Reference Voltages
App 20190067298 - Karda; Kamal M. ; et al. | 2019-02-28 |
Semiconductor Devices, Hybrid Transistors, And Related Methods
App 20190067375 - Karda; Kamal M. ; et al. | 2019-02-28 |
Devices And Systems With String Drivers Including High Band Gap Material And Methods Of Formation
App 20190067475 - Liu; Haitao ; et al. | 2019-02-28 |
Memory cells
Grant 10,217,753 - Karda , et al. Feb | 2019-02-26 |
Array Of Recessed Access Gate Lines
App 20190051653 - Tang; Sanh D. ; et al. | 2019-02-14 |
Memory Cells
App 20190013319 - Sandhu; Gurtej S. ; et al. | 2019-01-10 |
Array of conductive lines individually extending transversally across and elevationally over a mid-portion of individual active area regions
Grant 10,163,908 - Tang , et al. Dec | 2018-12-25 |
Vertical ferroelectric field effect transistor constructions, constructions comprising a pair of vertical ferroelectric field effect transistors, vertical strings of ferroelectric field effect transistors, and vertical strings of laterally opposing pairs of vertical ferroelectric field effect transi
Grant 10,153,299 - Karda , et al. Dec | 2018-12-11 |
Vertical Ferroelectric Field Effect Transistor Constructions, Constructions Comprising A Pair Of Vertical Ferroelectric Field Effect Transistors, Vertical Strings Of Ferroelectric Field Effect Transistors, And Vertical Strings Of Laterally Opposing Pairs Of Vertical Ferroelectric Field Effect Transi
App 20180323214 - Karda; Kamal M. ; et al. | 2018-11-08 |
Field Effect Transistor Constructions With Gate Insulator Having Local Regions Radially There-Through That Have Different Capacitance At Different Circumferential Locations Relative To A Channel Core Periphery
App 20180308537 - Karda; Kamal M. ; et al. | 2018-10-25 |
Field effect transistor constructions with gate insulator having local regions radially there-through that have different capacitance at different circumferential locations relative to a channel core periphery
Grant 10,062,426 - Karda , et al. August 28, 2 | 2018-08-28 |
Memory Cells
App 20180145084 - Karda; Kamal M. ; et al. | 2018-05-24 |
Memory cells
Grant 9,887,204 - Karda , et al. February 6, 2 | 2018-02-06 |
Transistors and Methods of Forming Transistors
App 20170373247 - Karda; Kamal M. ; et al. | 2017-12-28 |
Multi-bit ferroelectric memory device and methods of forming the same
Grant 9,847,123 - Karda , et al. December 19, 2 | 2017-12-19 |
Transistors and methods of forming transistors
Grant 9,773,976 - Karda , et al. September 26, 2 | 2017-09-26 |
Memory Cells
App 20170236828 - Karda; Kamal M. ; et al. | 2017-08-17 |
Memory cells
Grant 9,673,203 - Karda , et al. June 6, 2 | 2017-06-06 |
Multi-bit Ferroelectric Memory Device And Methods Of Forming The Same
App 20170148512 - Karda; Kamal M. ; et al. | 2017-05-25 |
Vertical Ferroelectric Field Effect Transistor Constructions, Constructions Comprising A Pair Of Vertical Ferroelectric Field Effect Transistors, Vertical Strings Of Ferroelectric Field Effect Transistors, And Vertical Strings Of Laterally Opposing Pairs Of Vertical Ferroelectric Field Effect Transi
App 20170117295 - Karda; Kamal M. ; et al. | 2017-04-27 |
Transistors and Methods of Forming Transistors
App 20170104155 - Karda; Kamal M. ; et al. | 2017-04-13 |
Apparatuses having a vertical memory cell
Grant 9,577,092 - Karda , et al. February 21, 2 | 2017-02-21 |
Multi-bit ferroelectric memory device and methods of forming the same
Grant 9,564,576 - Karda , et al. February 7, 2 | 2017-02-07 |
Transistors and methods of forming transistors
Grant 9,559,194 - Karda , et al. January 31, 2 | 2017-01-31 |
Vertical ferroelectric field effect transistor constructions, constructions comprising a pair of vertical ferroelectric field effect transistors, vertical strings of ferroelectric field effect transistors, and vertical strings of laterally opposing pairs of vertical ferroelectric field effect transi
Grant 9,559,118 - Karda , et al. January 31, 2 | 2017-01-31 |
Arrays of vertically-oriented transistors, and memory arrays including vertically-oriented transistors
Grant 9,478,550 - Karda , et al. October 25, 2 | 2016-10-25 |
Semiconductor devices including a recessed access device and methods of forming same
Grant 9,449,978 - Karda , et al. September 20, 2 | 2016-09-20 |
Field effect transistor constructions and memory arrays
Grant 9,450,024 - Karda , et al. September 20, 2 | 2016-09-20 |
Memory Cells
App 20160240545 - Karda; Kamal M. ; et al. | 2016-08-18 |
Vertical Ferroelectric Field Effect Transistor Constructions, Constructions Comprising A Pair Of Vertical Ferroelectric Field Effect Transistors, Vertical Strings Of Ferroelectric Field Effect Transistors, And Vertical Strings Of Laterally Opposing Pairs Of Vertical Ferroelectric Field Effect Transi
App 20160225860 - Karda; Kamal M. ; et al. | 2016-08-04 |
Methods of forming transistors
Grant 9,391,206 - Pandey , et al. July 12, 2 | 2016-07-12 |
Transistors and Methods of Forming Transistors
App 20160155829 - Karda; Kamal M. ; et al. | 2016-06-02 |
Arrays Of Recessed Access Gate Lines, Arrays Of Conductive Lines,Arrays Of Recessed Access Gate Lines And Conductive Lines, And Memory Circuitry
App 20160155745 - Tang; Sanh D. ; et al. | 2016-06-02 |
Field Effect Transistor Constructions And Memory Arrays
App 20160141336 - Karda; Kamal M. ; et al. | 2016-05-19 |
Vertical ferroelectric field effect transistor constructions, constructions comprising a pair of vertical ferroelectric field effect transistors, vertical strings of ferroelectric field effect transistors, and vertical strings of laterally opposing pairs of vertical ferroelectric field effect transi
Grant 9,337,210 - Karda , et al. May 10, 2 | 2016-05-10 |
Methods of Forming Transistors
App 20160126354 - Pandey; Deepak Chandra ; et al. | 2016-05-05 |
Memory cells
Grant 9,305,929 - Karda , et al. April 5, 2 | 2016-04-05 |
Multi-bit Ferroelectric Memory Device And Methods Of Forming The Same
App 20160072044 - Karda; Kamal M. ; et al. | 2016-03-10 |
Transistors and methods of forming transistors
Grant 9,276,092 - Karda , et al. March 1, 2 | 2016-03-01 |
Field effect transistor constructions and memory arrays
Grant 9,276,134 - Karda , et al. March 1, 2 | 2016-03-01 |
Electronic device, memory cell, and method of flowing electric current
Grant 9,269,899 - Karda , et al. February 23, 2 | 2016-02-23 |
Methods of forming an array of conductive lines and methods of forming an array of recessed access gate lines
Grant 9,263,455 - Tang , et al. February 16, 2 | 2016-02-16 |
Methods of forming transistors
Grant 9,263,341 - Pandey , et al. February 16, 2 | 2016-02-16 |
Multi-bit ferroelectric memory device and methods of forming the same
Grant 9,219,225 - Karda , et al. December 22, 2 | 2015-12-22 |
Methods of Forming Transistors
App 20150364377 - Pandey; Deepak Chandra ; et al. | 2015-12-17 |
Field Effect Transistor Constructions And Methods Of Programming Field Effect Transistors To One Of At Least Three Different Programmed States
App 20150310905 - Karda; Kamal M. ; et al. | 2015-10-29 |
Methods of forming transistors
Grant 9,147,729 - Pandey , et al. September 29, 2 | 2015-09-29 |
Memory Cells and Methods Of Forming Memory Cells
App 20150249089 - Karda; Kamal M. ; et al. | 2015-09-03 |
Methods of Forming Transistors
App 20150243734 - Pandey; Deepak ; et al. | 2015-08-27 |
Field Effect Transistor Constructions And Memory Arrays
App 20150200308 - Karda; Kamal M. ; et al. | 2015-07-16 |
Field Effect Transistor Constructions And Memory Arrays
App 20150200202 - Karda; Kamal M. ; et al. | 2015-07-16 |
Semiconductor Devices Including A Recessed Access Device And Methods Of Forming Same
App 20150194430 - Karda; Kamal M. ; et al. | 2015-07-09 |
Field effect transistor constructions and memory arrays
Grant 9,076,686 - Karda , et al. July 7, 2 | 2015-07-07 |
Memory cells having capacitor dielectric directly against a transistor source/drain region
Grant 9,059,030 - Karda , et al. June 16, 2 | 2015-06-16 |
Methods of forming a vertical transistor
Grant 9,054,216 - Guha , et al. June 9, 2 | 2015-06-09 |
Multi-bit Ferroelectric Memory Device And Methods Of Forming The Same
App 20150117084 - Karda; Kamal M. ; et al. | 2015-04-30 |
Apparatuses Having A Vertical Memory Cell
App 20150054063 - Karda; Kamal M. ; et al. | 2015-02-26 |
Vertical Ferroelectric Field Effect Transistor Constructions, Constructions Comprising A Pair Of Vertical Ferroelectric Field Effect Transistors, Vertical Strings Of Ferroelectric Field Effect Transistors, And Vertical Strings Of Laterally Opposing Pairs Of Vertical Ferroelectric Field Effect Transi
App 20150041873 - Karda; Kamal M. ; et al. | 2015-02-12 |
Arrays Of Recessed Access Gate Lines, Arrays Of Conductive Lines, Arrays Of Recessed Access Gate Lines And Conductive Lines, Memory Circuitry, Methods Of Forming An Array Of Recessed Access Gate Lines, Methods Of Forming An Array Of Conductive Lines, And Methods Of Forming An Array Of Recessed Acces
App 20150028406 - Tang; Sanh D. ; et al. | 2015-01-29 |
Vertical access device and apparatuses having a body connection line, and related method of operating the same
Grant 8,878,271 - Karda , et al. November 4, 2 | 2014-11-04 |
Methods Of Forming A Vertical Transistor
App 20140315364 - Guha; Jaydip ; et al. | 2014-10-23 |
Vertical Access Device And Apparatuses Having A Body Connection Line, And Related Method Of Operating The Same
App 20140247674 - Karda; Kamal M. ; et al. | 2014-09-04 |
Methods of forming a vertical transistor, methods of forming memory cells, and methods of forming arrays of memory cells
Grant 8,790,977 - Guha , et al. July 29, 2 | 2014-07-29 |
Methods Of Forming A Vertical Transistor, Methods Of Forming Memory Cells, And Methods Of Forming Arrays Of Memory Cells
App 20140073100 - Guha; Jaydip ; et al. | 2014-03-13 |
Arrays of Vertically-Oriented Transistors, And Memory Arrays Including Vertically-Oriented Transistors
App 20140054718 - Karda; Kamal M. ; et al. | 2014-02-27 |
Methods of forming a vertical transistor and at least a conductive line electrically coupled therewith
Grant 8,609,488 - Guha , et al. December 17, 2 | 2013-12-17 |
Methods Of Forming A Vertical Transistor And At Least A Conductive Line Electrically Coupled Therewith
App 20130237023 - Guha; Jaydip ; et al. | 2013-09-12 |
Methods of forming a vertical transistor and at least a conductive line electrically coupled therewith
Grant 8,450,175 - Guha , et al. May 28, 2 | 2013-05-28 |
Memory Cells And Methods Of Forming Memory Cells
App 20130087840 - Karda; Kamal M. ; et al. | 2013-04-11 |
Methods Of Forming A Vertical Transistor And At Least A Conductive Line Electrically Coupled Therewith, Methods Of Forming Memory Cells, And Methods Of Forming Arrays Of Memory Cells
App 20120214285 - Guha; Jaydip ; et al. | 2012-08-23 |
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