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Patent applications and USPTO patent grants for Kapre; Ravindra Manohar.The latest application filed is for "process for etching a controllable thickness of oxide on an integrated circuit structure on a semiconductor substrate using nitrogen plasma and plasma and an rf bias applied to the substrate".
Patent | Date |
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Process for etching a controllable thickness of oxide on an integrated circuit structure on a semiconductor substrate using nitrogen plasma and plasma and an rf bias applied to the substrate Grant 6,759,337 - Aronowitz , et al. July 6, 2 | 2004-07-06 |
Process For Forming Thin Gate Oxide With Enhanced Reliability By Nitridation Of Upper Surface Of Gate Of Oxide To Form Barrier Of Nitrogen Atoms In Upper Surface Region Of Gate Oxide, And Resulting Product Grant 6,413,881 - Aronowitz , et al. July 2, 2 | 2002-07-02 |
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