Kano; Gota

Patent Applications and Registrations

Patent applications and USPTO patent grants for Kano; Gota.The latest application filed is for "ferroelectric flat panel displays".

Company Profile

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Kano; Gota - Kyoto JP
Kano; Gota - Nagaokakyo JP
Kano; Gota - Nagaoka-Kyo JP
Kano; Gota - Nagaoka JA
Kano; Gota - Uguisudai JA
Kano; Gota - Otokuni-gun JA

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Ferroelectric flat panel displays Grant 6,198,225 - Kano , et al. March 6, 2	2001-03-06
Method of making FET utilizing shadow masking and diffusion from a doped oxide Grant 4,351,099 - Takagi , et al. September 28, 1	1982-09-28
Semiconductor memory device Grant 4,143,286 - Koike , et al. March 6, 1	1979-03-06
Junction gate type GaAs field-effect transistor and method of forming Grant 4,075,652 - Umebachi , et al. February 21, 1	1978-02-21
Negative-resistance semiconductor device Grant 4,064,525 - Kano , et al. December 20, 1	1977-12-20
Negative resistance device Grant 4,053,798 - Koike , et al. October 11, 1	1977-10-11
Apparatus to prevent overcurrent or overvoltage Grant 3,992,650 - Iwasa , et al. November 16, 1	1976-11-16
Touch-operation switch Grant 3,991,329 - Iwasa , et al. November 9, 1	1976-11-09
Schottky Barrier Pressure Sensitive Semiconductor Device With Air Space Around Periphery Of Metal-semiconductor Junction Grant 3,786,320 - Kano , et al. * January 15, 1	1974-01-15
Schottky Barrier Semiconductor Device Having A Substantially Non-conductive Barrier For Preventing Undesirable Reverse-leakage Currents And Method For Making The Same Grant 3,763,408 - Kano , et al. October 2, 1	1973-10-02
Pressure-sensitive Schottky Barrier Semiconductor Device Having A Substantially Non-conductive Barrier For Preventing Undesirable Reverse-leakage Currents And Method For Making The Same Grant 3,746,950 - Kano , et al. July 17, 1	1973-07-17
Schottky Barrier Type Semiconductor Device With Improved Backward Breakdown Voltage Characteristic Grant 3,742,315 - Iizuka , et al. June 26, 1	1973-06-26
Semiconductor Device Having An Alloy Electrode And Its Manufacturing Method Grant 3,591,838 - Fujiwara , et al. July 6, 1	1971-07-06

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