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Patent applications and USPTO patent grants for KANG; Yoongoo.The latest application filed is for "dram device including an air gap and a sealing layer".
Patent | Date |
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Dram Device Including An Air Gap And A Sealing Layer App 20220246620 - KANG; Yoongoo ;   et al. | 2022-08-04 |
DRAM device including an air gap and a sealing layer Grant 11,335,689 - Kang , et al. May 17, 2 | 2022-05-17 |
Method For Manufacturing Semiconductor Device Including Air Gap App 20220093387 - LEE; Dain ;   et al. | 2022-03-24 |
Integrated circuit device Grant 11,177,215 - Park , et al. November 16, 2 | 2021-11-16 |
Variable resistance memory device Grant 11,037,991 - Kang , et al. June 15, 2 | 2021-06-15 |
Integrated Circuit Device App 20210066200 - Park; Kyungwook ;   et al. | 2021-03-04 |
Dram Device Including An Air Gap And A Sealing Layer App 20210066304 - KANG; Yoongoo ;   et al. | 2021-03-04 |
Variable Resistance Memory Device App 20200105832 - KANG; YOONGOO ;   et al. | 2020-04-02 |
Semiconductor memory devices having lower and upper interconnections, selection components and memory components Grant 8,853,660 - Han , et al. October 7, 2 | 2014-10-07 |
Phase-change Memory Device And Method For Fabricating The Same App 20140120685 - JEONG; Seong Hoon ;   et al. | 2014-05-01 |
Semiconductor Devices and Methods of Manufacturing the Same App 20130146830 - Han; JaeJong ;   et al. | 2013-06-13 |
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