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Patent applications and USPTO patent grants for Kang; Tae Gyoung.The latest application filed is for "dram cell array using facing bar and method of fabricating the same".
Patent | Date |
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DRAM cell array using facing bar and method of fabricating the same Grant 10,811,418 - Kim , et al. October 20, 2 | 2020-10-20 |
NAND flash memory device having facing bar and method of fabricating the same Grant 10,461,091 - Kim , et al. Oc | 2019-10-29 |
Dram Cell Array Using Facing Bar And Method Of Fabricating The Same App 20190237467 - Kim; Jin Ho ;   et al. | 2019-08-01 |
Nand Flash Memory Device Having Facing Bar And Method Of Fabricating The Same App 20190148388 - KIM; Jin Ho ;   et al. | 2019-05-16 |
DRAM cell for reducing layout area and fabricating method thereof Grant 10,177,153 - Kang J | 2019-01-08 |
Dram Cell For Reducing Layout Area And Fabricating Method Thereof App 20180033791 - KANG; Tae Gyoung | 2018-02-01 |
Flash memory device reducing layout area Grant 9,087,589 - Kang , et al. July 21, 2 | 2015-07-21 |
Flash Memory Device Reducing Layout Area App 20140233313 - KANG; Tae Gyoung ;   et al. | 2014-08-21 |
Content addressable memory device Grant 7,274,580 - Kang , et al. September 25, 2 | 2007-09-25 |
Content addressable memory device App 20060062038 - Kang; Tae-gyoung ;   et al. | 2006-03-23 |
Content addressable memory device Grant 7,002,822 - Kang , et al. February 21, 2 | 2006-02-21 |
Layout method of semiconductor device Grant 6,872,990 - Kang March 29, 2 | 2005-03-29 |
Content addressable memory device App 20050024976 - Kang, Tae-Gyoung ;   et al. | 2005-02-03 |
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