Kang; Sangbom

Patent Applications and Registrations

Patent applications and USPTO patent grants for Kang; Sangbom.The latest application filed is for "semiconductor device including mos transistor having silicided source/drain region and method of fabricating the same".

Company Profile

4.8.9

Kang; Sangbom - Seoul KR

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Semiconductor device including MOS transistor having silicided source/drain region and method of fabricating the same Grant 11,004,976 - Kang , et al. May 11, 2	2021-05-11
Semiconductor Device Including Mos Transistor Having Silicided Source/drain Region And Method Of Fabricating The Same App 20190214498 - Kang; Sungkwan ; et al.	2019-07-11
Semiconductor devices including silicide regions and methods of fabricating the same Grant 10,263,109 - Kang , et al.	2019-04-16
Semiconductor device including MOS transistor having silicided source/drain region and method of fabricating the same Grant 10,170,622 - Kang , et al. J	2019-01-01
Semiconductor Device Including Mos Transistor Having Silicided Source/drain Region And Method Of Fabricating The Same App 20170278967 - Kang; Sungkwan ; et al.	2017-09-28
Semiconductor Devices Including Silicide Regions And Methods Of Fabricating The Same App 20160133748 - Kang; Sungkwan ; et al.	2016-05-12
Semiconductor Devices Including Silicide Regions And Methods Of Fabricating The Same App 20150031183 - Kang; Sungkwan ; et al.	2015-01-29
Method of manufacturing for semiconductor device using expandable material Grant 8,906,761 - Kim , et al. December 9, 2	2014-12-09
Semiconductor devices including silicide regions and methods of fabricating the same Grant 8,835,995 - Kang , et al. September 16, 2	2014-09-16
Semiconductor device having selectively nitrided gate insulating layer and method of fabricating the same Grant 8,772,115 - Son , et al. July 8, 2	2014-07-08
Method Of Manufacturing For Semiconductor Device Using Expandable Material App 20140073125 - Kim; Shinhye ; et al.	2014-03-13
Semiconductor Device Having Selectively Nitrided Gate Insulating Layer And Method Of Fabricating The Same App 20130316525 - Son; HyeokJun ; et al.	2013-11-28
Unit For Supporting A Substrate And Apparatus For Treating A Substrate With The Unit App 20120269498 - KANG; Gonsu ; et al.	2012-10-25
Semiconductor Devices Including Silicide Regions And Methods Of Fabricating The Same App 20120056245 - Kang; Sungkwan ; et al.	2012-03-08
Recess gate transistor Grant 8,012,828 - Min , et al. September 6, 2	2011-09-06
Recess Gate Transistor App 20090173994 - Min; Ji-Young ; et al.	2009-07-09

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