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name:-0.021684885025024
name:-0.0013229846954346
Kang; Man-Sug Patent Filings

Kang; Man-Sug

Patent Applications and Registrations

Patent applications and USPTO patent grants for Kang; Man-Sug.The latest application filed is for "method of manufacturing semiconductor device including metal-containing conductive line".

Company Profile
0.16.21
  • Kang; Man-Sug - Suwon-si KR
  • KANG; Man-sug - Gyeonggi-do KR
  • Kang; Man-Sug - Suwon KR
  • Kang, Man-Sug - Suwon-City KR
  • Kang; Man Sug - Yongin-si KR
  • Kang, Man-Sug - Yongin-city KR
  • Kang; Man-sug - Kyungki-do KR
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Semiconductor device
Grant 9,178,039 - Park , et al. November 3, 2
2015-11-03
Method Of Manufacturing Semiconductor Device Including Metal-containing Conductive Line
App 20150017797 - PARK; Jae-hwa ;   et al.
2015-01-15
Methods of manufacturing non-volatile phase-change memory devices
Grant 8,778,728 - Choi , et al. July 15, 2
2014-07-15
Semiconductor Device
App 20140159145 - PARK; Jae-Hwa ;   et al.
2014-06-12
Method of manufacturing variable resistance memory device
Grant 8,735,215 - Park , et al. May 27, 2
2014-05-27
Methods of forming a phase change layer and methods of fabricating a phase change memory device including the same
Grant 8,557,627 - Oh , et al. October 15, 2
2013-10-15
Methods Of Forming A Phase Change Layer And Methods Of Fabricating A Phase Change Memory Device Including The Same
App 20130143380 - Oh; Jin-Ho ;   et al.
2013-06-06
Semiconductor Device Including Metal-containing Conductive Line And Method Of Manufacturing The Same
App 20130075909 - PARK; Jae-hwa ;   et al.
2013-03-28
Method Of Manufacturing Variable Resistance Memory Device
App 20120149165 - Park; Jeong-Hee ;   et al.
2012-06-14
Methods Of Manufacturing Non-Volatile Phase-Change Memory Devices
App 20120088347 - Choi; Byoung-deog ;   et al.
2012-04-12
Phase Change Structure, And Phase Change Memory Device
App 20110155985 - Oh; Jin-Ho ;   et al.
2011-06-30
Method of manufacturing a capacitor and method of manufacturing a semiconductor device using the same
Grant 7,629,218 - Lee , et al. December 8, 2
2009-12-08
Methods of manufacturing a semiconductor device
Grant 7,592,227 - Lee , et al. September 22, 2
2009-09-22
Semiconductor device and method of manufacturing the same
App 20070176225 - Lee; Sang-Hoon ;   et al.
2007-08-02
Method of manufacturing a capacitor and method of manufacturing a semiconductor device using the same
App 20070111462 - Lee; Woo-Sung ;   et al.
2007-05-17
Pad structure, method of forming a pad structure, semiconductor device having a pad structure and method of manufacturing a semiconductor device
App 20070085207 - Lee; Woo-Sung ;   et al.
2007-04-19
Methods of manufacturing a semiconductor device
App 20070010068 - Lee; Yong-Sun ;   et al.
2007-01-11
Method for forming a low-k dielectric layer for a semiconductor device
Grant 6,962,876 - Ahn , et al. November 8, 2
2005-11-08
Method of forming a dielectric layer for a non-volatile memory cell and method of forming a non-volatile memory cell having the dielectric layer
App 20050153513 - Lee, Woong ;   et al.
2005-07-14
Method for forming a low-k dielectric layer for a semiconductor device
App 20050148201 - Ahn, Jae-Young ;   et al.
2005-07-07
Method for forming a gate electrode in a semiconductor device including re-oxidation for restraining the thickness of the gate oxide
Grant 6,905,927 - Ahn , et al. June 14, 2
2005-06-14
Insulating layers in semiconductor devices having a multi-layer nanolaminate structure of SiNx thin film and BN thin film and methods for forming the same
Grant 6,740,977 - Ahn , et al. May 25, 2
2004-05-25
Method for forming a gate electrode in a semiconductor device
App 20040087123 - Ahn, Jae-Young ;   et al.
2004-05-06
Method of making semiconductor memory device having a floating gate with a rounded edge
Grant 6,689,659 - Kang , et al. February 10, 2
2004-02-10
Method for forming a gate electrode in a semiconductor device
Grant 6,660,587 - Ahn , et al. December 9, 2
2003-12-09
Insulating layers in semiconductor devices having a multi-layer nanolaminate structure of SiNx thin film and BN thin film and methods for forming the same
App 20030201540 - Ahn, Jae-Young ;   et al.
2003-10-30
Method for depositing a tungsten silicide layer
Grant 6,534,400 - Ahn , et al. March 18, 2
2003-03-18
Method for forming a gate electrode in a semiconductor device
App 20030022488 - Ahn, Jae-Young ;   et al.
2003-01-30
Semiconductor memory device having a floating gate and method of manufacturing the same
App 20020179960 - Kang, Man-Sug ;   et al.
2002-12-05
Method for depositing a tungsten silicide layer
App 20020137315 - Ahn, Jae Young ;   et al.
2002-09-26
Method for self-aligned shallow trench isolation and method of manufacturing non-volatile memory device using the same
App 20020072197 - Kang, Man-Sug ;   et al.
2002-06-13
Method for forming integrated circuit capacitors including dual layer electrodes
Grant 5,963,805 - Kang , et al. October 5, 1
1999-10-05

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