KANG; Jun Sung

Patent Applications and Registrations

Patent applications and USPTO patent grants for KANG; Jun Sung.The latest application filed is for "cavity spacer for nanowire transistors".

Company Profile

9.8.12

KANG; Jun Sung - Portland OR
Kang; Jun Sung - Hillsboro OR

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Cavity Spacer For Nanowire Transistors App 20220246721 - HSU; William ; et al.	2022-08-04
Dielectric isolation layer between a nanowire transistor and a substrate Grant 11,404,578 - Beattie , et al. August 2, 2	2022-08-02
Cavity spacer for nanowire transistors Grant 11,342,411 - Hsu , et al. May 24, 2	2022-05-24
Gate-all-around integrated circuit structures having self-aligned source or drain undercut for varied widths Grant 11,276,691 - Guha , et al. March 15, 2	2022-03-15
Self-aligned Nanowire App 20220052178 - Armstrong; Mark ; et al.	2022-02-17
Self-aligned nanowire Grant 11,205,715 - Armstrong , et al. December 21, 2	2021-12-21
Transistors with channel and sub-channel regions with distinct compositions and dimensions Grant 11,069,795 - Jambunathan , et al. July 20, 2	2021-07-20
Geometry tuning of fin based transistor Grant 10,944,006 - Glass , et al. March 9, 2	2021-03-09
Transistors With Channel And Sub-channel Regions With Distinct Compositions And Dimensions App 20200411513 - Jambunathan; Karthik ; et al.	2020-12-31
Methods of forming self aligned spacers for nanowire device structures Grant 10,672,868 - Jambunathan , et al.	2020-06-02
Self-aligned Nanowire App 20200152767 - Armstrong; Mark ; et al.	2020-05-14
Non-planar Integrated Circuit Structures Having Mitigated Source Or Drain Etch From Replacement Gate Process App 20200105757 - KANG; Jun Sung ; et al.	2020-04-02
Gate-all-around Integrated Circuit Structures Having Self-aligned Source Or Drain Undercut For Varied Widths App 20200091145 - GUHA; Biswajeet ; et al.	2020-03-19
Cavity Spacer For Nanowire Transistors App 20200006478 - Hsu; William ; et al.	2020-01-02
Dielectric Isolation Layer Between A Nanowire Transistor And A Substrate App 20190393351 - Beattie; Bruce E. ; et al.	2019-12-26
Nanowire Transistor Structure And Method Of Shaping App 20190393350 - Thompson; Erica J. ; et al.	2019-12-26
Reduced leakage transistors with germanium-rich channel regions Grant 10,516,021 - Glass , et al. Dec	2019-12-24
Geometry Tuning Of Fin Based Transistor App 20190019891 - GLASS; Glenn A. ; et al.	2019-01-17
Methods Of Forming Self Aligned Spacers For Nanowire Device Structures App 20180358436 - Jambunathan; Karthik ; et al.	2018-12-13
Reduced Leakage Transistors With Germanium-rich Channel Regions App 20180331184 - GLASS; GLENN A. ; et al.	2018-11-15

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