loadpatents
name:-0.01360821723938
name:-0.41976594924927
name:-0.00075697898864746
Kaneko; Yawara Patent Filings

Kaneko; Yawara

Patent Applications and Registrations

Patent applications and USPTO patent grants for Kaneko; Yawara.The latest application filed is for "hologram recording medium and method for manufacturing same".

Company Profile
0.12.7
  • Kaneko; Yawara - Chigasaki JP
  • Kaneko; Yawara - Kanagawa JP
  • Kaneko, Yawara - Chigasaki-shi JP
  • Kaneko; Yawara - Tokyo JP
  • Kaneko; Yawara - Fuchu JP
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Hologram recording medium and method for manufacturing same
Grant 7,800,802 - Kaneko , et al. September 21, 2
2010-09-21
Hologram Recording Medium and Method for Manufacturing Same
App 20080316555 - Kaneko; Yawara ;   et al.
2008-12-25
III-nitride semiconductor light emitting device having a silver p-contact
Grant 7,262,436 - Kondoh , et al. August 28, 2
2007-08-28
III-Nitride semiconductor light emitting device having a silver p-contact
App 20050179051 - Kondoh, You ;   et al.
2005-08-18
Semiconductor light emitting device having a silver p-contact
Grant 6,900,472 - Kondoh , et al. May 31, 2
2005-05-31
Nitride semiconductor layer structure and a nitride semiconductor laser incorporating a portion of same
Grant 6,829,273 - Amano , et al. December 7, 2
2004-12-07
Nitride Semiconductor Layer Structure And A Nitride Semiconductor Laser Incorporating A Portion Of Same
App 20040213309 - Amano, Hiroshi ;   et al.
2004-10-28
Method for performing photolithography
Grant 6,696,223 - Hidaka , et al. February 24, 2
2004-02-24
Nitride semiconductor device
Grant 6,690,700 - Takeuchi , et al. February 10, 2
2004-02-10
Nitride semiconductor layer structure and a nitride semiconductor laser incorporating a portion of same
App 20020094002 - Amano, Hiroshi ;   et al.
2002-07-18
Method for performing photolithography
App 20020001779 - Hidaka, Tetsuya ;   et al.
2002-01-03
Nitride semiconductor device
App 20010038656 - Takeuchi, Tetsuya ;   et al.
2001-11-08
Semiconductor light emitting device having a silver p-contact
App 20010015442 - Kondoh, You ;   et al.
2001-08-23
Method for manufacturing a semiconductor light-emitting device
Grant 6,258,614 - Kaneko July 10, 2
2001-07-10
Method of making P-type group III-nitride semiconductor device having improved P contact
Grant 6,238,945 - Kaneko May 29, 2
2001-05-29
Nitride semiconductor light emitting device having a silver p-contact
Grant 6,194,743 - Kondoh , et al. February 27, 2
2001-02-27
P-type group III-nitride semiconductor device
Grant 6,150,672 - Kaneko November 21, 2
2000-11-21
Buried reflectors for light emitters in epitaxial material and method for producing same
Grant 6,046,465 - Wang , et al. April 4, 2
2000-04-04
Gas-phase etching and regrowth method for Group III-nitride crystals
Grant 5,814,239 - Kaneko , et al. September 29, 1
1998-09-29

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