loadpatents
name:-0.018718957901001
name:-0.017289161682129
name:-0.00051999092102051
Kanayama; Toshihiko Patent Filings

Kanayama; Toshihiko

Patent Applications and Registrations

Patent applications and USPTO patent grants for Kanayama; Toshihiko.The latest application filed is for "compound film of tungsten and germanium, and semiconductor device".

Company Profile
0.14.13
  • Kanayama; Toshihiko - Ibaraki JP
  • Kanayama; Toshihiko - Tsukuba JP
  • Kanayama; Toshihiko - Tsukuba-shi JP
  • Kanayama; Toshihiko - Tsuchiura JP
  • Kanayama; Toshihiko - Anpachi-gun JP
  • Kanayama, Toshihiko - Tsuchiura-shi JP
  • Kanayama; Toshihiko - Niihari JP
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Compound film of tungsten and germanium, and semiconductor device
Grant 10,692,986 - Okada , et al.
2020-06-23
Compound Film Of Tungsten And Germanium, And Semiconductor Device
App 20190207007 - OKADA; Naoya ;   et al.
2019-07-04
Thin film of metal-silicon compound and process for producing the thin film of the metal-silicon compound
Grant 8,367,030 - Kanayama , et al. February 5, 2
2013-02-05
Semiconductor device using graphene and method of manufacturing the same
Grant 8,168,964 - Hiura , et al. May 1, 2
2012-05-01
Semiconductor device and method of manufacturing the same
Grant 8,093,580 - Hiura , et al. January 10, 2
2012-01-10
Thin Film Of Metal-silicon Compound And Process For Producing The Thin Film Of The Metal-silicon Compound
App 20110002833 - Kanayama; Toshihiko ;   et al.
2011-01-06
Semiconductor Device Using Graphene And Method Of Manufacturing The Same
App 20100102292 - Hiura; Hidefumi ;   et al.
2010-04-29
Dopant material, dopant material manufacturing method, and semiconductor device using the same
Grant 7,687,801 - Hiura , et al. March 30, 2
2010-03-30
Semiconductor Device And Method Of Manufacturing The Same
App 20100051902 - Hiura; Hidefumi ;   et al.
2010-03-04
Dopant Material, Dopant Material Manufacturing Method, And Semiconductor Device Using The Same
App 20100012923 - Hiura; Hidefumi ;   et al.
2010-01-21
Precursor composition for porous film and method for preparing the composition, porous film and method for preparing the porous film, and semiconductor device
App 20090053503 - Fujii; Nobutoshi ;   et al.
2009-02-26
Optical measurement method and device
Grant 7,408,635 - Pobortchi , et al. August 5, 2
2008-08-05
Doping method and semiconductor device using the same
Grant 7,247,548 - Tada , et al. July 24, 2
2007-07-24
Semiconductor device and method of manufacturing the same
App 20070161213 - Hiura; Hidefumi ;   et al.
2007-07-12
Optical measurement method and device
App 20070013907 - Pobortchi; Vladimir ;   et al.
2007-01-18
Doping method and semiconductor device fabricated using the method
Grant 7,138,688 - Kanayama , et al. November 21, 2
2006-11-21
Microsize driving device and method for preparation thereof
Grant 7,052,653 - Hiratsuka , et al. May 30, 2
2006-05-30
Doping method and semiconductor device using the same
App 20050130395 - Tada, Tetsuya ;   et al.
2005-06-16
Doping method and semiconductor device fabricated using the method
App 20040121567 - Kanayama, Toshihiko ;   et al.
2004-06-24
Coating apparatus
Grant 6,746,537 - Fukuda , et al. June 8, 2
2004-06-08
Microsize driving device and method for preparation thereof
App 20040071607 - Hiratsuka, Yuichi ;   et al.
2004-04-15
Carborane supercluster and method of producing same
Grant 6,680,411 - Kanayama , et al. January 20, 2
2004-01-20
Coating apparatus
App 20030037728 - Fukuda, Tsutomu ;   et al.
2003-02-27
Carborane supercluster and method of producing same
App 20030023118 - Kanayama, Toshihiko ;   et al.
2003-01-30
Method for producing minute particles and apparatus therefor
Grant 5,382,801 - Kanayama January 17, 1
1995-01-17
Relative-displacement measurement method
Grant 4,815,850 - Kanayama , et al. March 28, 1
1989-03-28

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