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Patent applications and USPTO patent grants for Kanarsky; Thomas Safron.The latest application filed is for "finfets and methods of making same".
Patent | Date |
---|---|
finFETs and methods of making same Grant 8,410,544 - Chan , et al. April 2, 2 | 2013-04-02 |
finFETS AND METHODS OF MAKING SAME App 20110316081 - Chan; Kevin K. ;   et al. | 2011-12-29 |
finFETS and methods of making same Grant 8,043,920 - Chan , et al. October 25, 2 | 2011-10-25 |
finFETS AND METHODS OF MAKING SAME App 20110062518 - Chan; Kevin K. ;   et al. | 2011-03-17 |
Sectional field effect devices and method of fabrication Grant 7,659,153 - Zhang , et al. February 9, 2 | 2010-02-09 |
Sectional Field Effect Devices and Method of Fabrication App 20080254577 - Zhang; Ying ;   et al. | 2008-10-16 |
Method of fabricating sectional field effect devices Grant 7,413,941 - Zhang , et al. August 19, 2 | 2008-08-19 |
Sectional field effect devices Grant 7,388,258 - Zhang , et al. June 17, 2 | 2008-06-17 |
Sectional field effect devices and method of fabrication App 20060240607 - Zhang; Ying ;   et al. | 2006-10-26 |
Sectional field effect devices and method of fabrication App 20050127362 - Zhang, Ying ;   et al. | 2005-06-16 |
Method of forming a buried bitline in a vertical DRAM device App 20010017384 - Economikos, Laertis ;   et al. | 2001-08-30 |
Method of forming a buried bitline in a vertical DRAM device Grant 6,218,236 - Economikos , et al. April 17, 2 | 2001-04-17 |
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