Kan; Jimmy Jianan

Patent Applications and Registrations

Patent applications and USPTO patent grants for Kan; Jimmy Jianan.The latest application filed is for "engineered barrier layer interface for high speed spin-transfer torque magnetic random access memory".

Company Profile

7.11.10

Kan; Jimmy Jianan - San Diego CA

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Engineered barrier layer interface for high speed spin-transfer torque magnetic random access memory Grant 10,833,254 - Park , et al. November 10, 2	2020-11-10
Message-based key generation using physical unclonable function (PUF) Grant 10,547,460 - Wang , et al. Ja	2020-01-28
Engineered barrier layer interface for high speed spin-transfer torque magnetic random access memory Grant 10,431,734 - Park , et al. O	2019-10-01
Engineered Barrier Layer Interface For High Speed Spin-transfer Torque Magnetic Random Access Memory App 20190288187 - PARK; Chando ; et al.	2019-09-19
High-speed, low power spin-orbit torque (SOT) assisted spin-transfer torque magnetic random access memory (STT-MRAM) bit cell array Grant 10,381,060 - Kan , et al. A	2019-08-13
Voltage-switched magneto-resistive random access memory (MRAM) employing separate read operation circuit paths from a shared spin torque write operation circuit path Grant 10,224,368 - Li , et al.	2019-03-05
Voltage-switched Magneto-resistive Random Access Memory (mram) Employing Separate Read Operation Circuit Paths From A Shared Spin Torque Write Operation Circuit Path App 20190006415 - Li; Xia ; et al.	2019-01-03
Magnetic tunnel junction (MTJ) devices with heterogeneous free layer structure, particularly suited for spin-torque-transfer (STT) magnetic random access memory (MRAM) (STT MRAM) Grant 10,134,808 - Kan , et al. November 20, 2	2018-11-20
Reducing or avoiding metal deposition from etching magnetic tunnel junction (MTJ) devices, including magnetic random access memory (MRAM) devices Grant 10,096,649 - Park , et al. October 9, 2	2018-10-09
Magneto-impedance (mi) Sensors Employing Current Confinement And Exchange Bias Layer(s) For Increased Sensitivity App 20180266991 - Kan; Jimmy Jianan ; et al.	2018-09-20
Engineered Barrier Layer Interface For High Speed Spin-transfer Torque Magnetic Random Access Memory App 20180212142 - PARK; Chando ; et al.	2018-07-26
Message-based Key Generation Using Physical Unclonable Function (puf) App 20180145838 - Wang; Peiyuan ; et al.	2018-05-24
High Speed, Low Power Spin-orbit Torque (sot) Assisted Spin-transfer Torque Magnetic Random Access Memory (stt-mram) Bit Cell Array App 20180061467 - KAN; Jimmy Jianan ; et al.	2018-03-01
Reducing Or Avoiding Metal Deposition From Etching Magnetic Tunnel Junction (mtj) Devices, Including Magnetic Random Access Memory (mram) Devices App 20180040668 - Park; Chando ; et al.	2018-02-08
Physically unclonable function based on comparison of MTJ resistances Grant 9,870,811 - Wang , et al. January 16, 2	2018-01-16
Physically Unclonable Function Based On Comparison Of Mtj Resistances App 20170365316 - Wang; Peiyuan ; et al.	2017-12-21
System and method to generate a random number Grant 9,824,735 - Kan , et al. November 21, 2	2017-11-21
High aspect ratio vertical interconnect access (via) interconnections in magnetic random access memory (MRAM) bit cells Grant 9,704,919 - Lu , et al. July 11, 2	2017-07-11
Magnetic Tunnel Junction (mtj) Devices With Heterogeneous Free Layer Structure, Particularly Suited For Spin-torque-transfer (stt) Magnetic Random Access Memory (mram) (stt Mram) App 20170125481 - Kan; Jimmy Jianan ; et al.	2017-05-04
Magnetic Tunnel Junction (mtj) Devices Particularly Suited For Efficient Spin-torque-transfer (stt) Magnetic Random Access Memory (mram) (stt Mram) App 20170077387 - Kan; Jimmy Jianan ; et al.	2017-03-16
Perpendicular magnetic tunnel junction (pMTJ) devices employing a thin pinned layer stack and providing a transitioning start to a body-centered cubic (BCC) crystalline / amorphous structure below an upper anti-parallel (AP) layer Grant 9,590,010 - Gottwald , et al. March 7, 2	2017-03-07

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