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Kamineni; Vimal Kumar Patent Filings

Kamineni; Vimal Kumar

Patent Applications and Registrations

Patent applications and USPTO patent grants for Kamineni; Vimal Kumar.The latest application filed is for "germanium mediated de-oxidation of silicon".

Company Profile
1.6.9
  • Kamineni; Vimal Kumar - Fremont CA
  • Kamineni; Vimal Kumar - Mechanicville NY
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Germanium Mediated De-oxidation Of Silicon
App 20220270874 - Liang; Yong ;   et al.
2022-08-25
Germanium mediated de-oxidation of silicon
Grant 11,302,528 - Liang , et al. April 12, 2
2022-04-12
Method And System For Formation Of Stabilized Tetragonal Barium Titanate
App 20220107518 - Liang; Yong ;   et al.
2022-04-07
Method and system for formation of stabilized tetragonal barium titanate
Grant 11,226,507 - Liang , et al. January 18, 2
2022-01-18
Method And System For Formation Of Stabilized Tetragonal Barium Titanate
App 20210124233 - Liang; Yong ;   et al.
2021-04-29
Germanium Mediated De-oxidation Of Silicon
App 20210028015 - Liang; Yong ;   et al.
2021-01-28
Integrated circuit product having a through-substrate-via (TSV) and a metallization layer that are formed after formation of a semiconductor device
Grant 10,446,443 - Kamineni , et al. Oc
2019-10-15
Structure And Method For Capping Cobalt Contacts
App 20180277427 - SARDESAI; Viraj ;   et al.
2018-09-27
Structure and method for capping cobalt contacts
Grant 10,043,708 - Sardesai , et al. August 7, 2
2018-08-07
Corrosion and/or etch protection layer for contacts and interconnect metallization integration
Grant 10,020,260 - Ahmed , et al. July 10, 2
2018-07-10
Corrosion And/or Etch Protection Layer For Contacts And Interconnect Metallization Integration
App 20180182708 - AHMED; Shafaat ;   et al.
2018-06-28
Integrated Ciurcuit Product Having A Through-substrate-via (tsv) And A Metallization Layer That Are Formed After Formation Of A Semiconductor Device
App 20180158733 - Kamineni; Himani Suhag ;   et al.
2018-06-07
Structure And Method For Capping Cobalt Contacts
App 20180130703 - SARDESAI; Viraj ;   et al.
2018-05-10
Methods of forming a through-substrate-via (TSV) and a metallization layer after formation of a semiconductor device
Grant 9,917,009 - Kamineni , et al. March 13, 2
2018-03-13
Methods Of Forming A Through-substrate-via (tsv) And A Metallization Layer After Formation Of A Semiconductor Device
App 20180040511 - Kamineni; Himani Suhag ;   et al.
2018-02-08

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