| Patent | Date |
|---|
Semiconductor device
Grant 10,354,735 - Tanaka , et al. July 16, 2 | 2019-07-16 |
Semiconductor Device
App 20180374542 - TANAKA; Toshihiro ; et al. | 2018-12-27 |
Semiconductor device
Grant 10,115,469 - Tanaka , et al. October 30, 2 | 2018-10-30 |
Semiconductor Device
App 20180047452 - TANAKA; Toshihiro ; et al. | 2018-02-15 |
Semiconductor device
Grant 9,812,211 - Tanaka , et al. November 7, 2 | 2017-11-07 |
Semiconductor Device
App 20160336074 - TANAKA; Toshihiro ; et al. | 2016-11-17 |
Semiconductor device
Grant 9,412,459 - Tanaka , et al. August 9, 2 | 2016-08-09 |
Semiconductor Device
App 20140198577 - TANAKA; Toshihiro ; et al. | 2014-07-17 |
Semiconductor device
Grant 8,698,224 - Tanaka , et al. April 15, 2 | 2014-04-15 |
Semiconductor Device
App 20130235668 - TANAKA; Toshihiro ; et al. | 2013-09-12 |
Semiconductor device
Grant 8,426,904 - Tanaka , et al. April 23, 2 | 2013-04-23 |
Semiconductor Device
App 20110309428 - TANAKA; TOSHIHIRO ; et al. | 2011-12-22 |
Semiconductor device
Grant 8,017,986 - Tanaka , et al. September 13, 2 | 2011-09-13 |
Semiconductor Device
App 20100157689 - TANAKA; TOSHIHIRO ; et al. | 2010-06-24 |
Semiconductor device
Grant 7,700,992 - Tanaka , et al. April 20, 2 | 2010-04-20 |
Semiconductor Device
App 20090010072 - TANAKA; Toshihiro ; et al. | 2009-01-08 |
Semiconductor Integrated Circuit Device Having Single-element Type Non-volatile Memory Elements
App 20080254582 - KOMORI; Kazuhiro ; et al. | 2008-10-16 |
Semiconductor device
Grant 7,414,283 - Tanaka , et al. August 19, 2 | 2008-08-19 |
Method of manufacturing a semiconductor integrated circuit device having single-element type non-volatile memory elements
Grant 7,399,667 - Komori , et al. July 15, 2 | 2008-07-15 |
Semiconductor integrated circuit having discrete trap type memory cells
Grant 7,190,023 - Kamigaki , et al. March 13, 2 | 2007-03-13 |
Method for forming nonvolatile memory device including insulating film containing nitrogen (nitride)
Grant 7,166,508 - Katayama , et al. January 23, 2 | 2007-01-23 |
Semicondudctor device
App 20060220100 - Tanaka; Toshihiro ; et al. | 2006-10-05 |
Semiconductor integrated circuit device having single-element type non-volatile memory elements
App 20060172482 - Komori; Kazuhiro ; et al. | 2006-08-03 |
Semiconductor integrated circuit device having single-element type non-volatile memory elements
Grant 7,071,050 - Komori , et al. July 4, 2 | 2006-07-04 |
Method of manufacturing a semiconductor integrated circuit device
Grant 7,064,090 - Minami , et al. June 20, 2 | 2006-06-20 |
Nonvolatile semiconductor memory device employing transistors having different gate withstand voltages for enhanced reading speed
Grant 7,057,230 - Tanaka , et al. June 6, 2 | 2006-06-06 |
Semiconductor integrated circuit
App 20060102967 - Kamigaki; Yoshiaki ; et al. | 2006-05-18 |
Semiconductor integrated circuit
Grant 7,012,296 - Kamigaki , et al. March 14, 2 | 2006-03-14 |
Semiconductor integrated circuit device having single-element type non-volatile memory elements
App 20060014347 - Komori; Kazuhiro ; et al. | 2006-01-19 |
Semiconductor device
App 20050258474 - Tanaka, Toshihiro ; et al. | 2005-11-24 |
Method of manufacturing a semiconductor memory device having a non-volatile memory cell portion with single misfet transistor type memory cells and a peripheral circuit portion with misfets
Grant 6,960,501 - Komori , et al. November 1, 2 | 2005-11-01 |
Semiconductor integrated circuit
App 20050219900 - Kamigaki, Yoshiaki ; et al. | 2005-10-06 |
Nonvolatile memory device with multi-bit memory cells having plural side gates
Grant 6,936,888 - Katayama , et al. August 30, 2 | 2005-08-30 |
Semiconductor integrated circuit having two switch transistors formed between two diffusion-layer lines
Grant 6,894,344 - Kamigaki , et al. May 17, 2 | 2005-05-17 |
Method of manufacturing a semiconductor integrated circuit device
App 20050032298 - Minami, Shinichi ; et al. | 2005-02-10 |
Nonvolatile memory device
App 20040241944 - Katayama, Kozo ; et al. | 2004-12-02 |
Semiconductor integrated circuit device and method of manufacturing the same
Grant 6,803,644 - Minami , et al. October 12, 2 | 2004-10-12 |
Semiconductor integrated circuit device having single-element type non-volatile memory elements
App 20040191979 - Komori, Kazuhiro ; et al. | 2004-09-30 |
Method of manufacturing a semiconductor memory device having a memory cell portion including MISFETs with a floating gate and a peripheral circuit portion with MISFETs
Grant 6,777,282 - Komori , et al. August 17, 2 | 2004-08-17 |
Semiconductor integrated circuit
App 20040070026 - Kamigaki, Yoshiaki ; et al. | 2004-04-15 |
Nonvolatile memory device
App 20040065918 - Katayama, Kozo ; et al. | 2004-04-08 |
Semiconductor integrated circuit
Grant 6,674,122 - Kamigaki , et al. January 6, 2 | 2004-01-06 |
Nonvolatile memory device
Grant 6,653,685 - Katayama , et al. November 25, 2 | 2003-11-25 |
Semiconductor Integrated Circuit
App 20030155607 - Kamigaki, Yoshiaki ; et al. | 2003-08-21 |
Semiconductor integrated circuit
Grant 6,531,735 - Kamigaki , et al. March 11, 2 | 2003-03-11 |
Nonvolatile memory device
App 20030017672 - Katayama, Kozo ; et al. | 2003-01-23 |
Semiconductor integrated circuit device having single-element type non-volatile memory elements
App 20020179963 - Komori, Kazuhiro ; et al. | 2002-12-05 |
Non-volatile semiconductor memory device
App 20020131299 - Yamazoe, Takanori ; et al. | 2002-09-19 |
Method of manufacturing a semiconductor device having non-volatile memory cell portion with single transistor type memory cells and peripheral portion with MISFETs
Grant 6,451,643 - Komori , et al. September 17, 2 | 2002-09-17 |
Nonvolatile memory device
App 20020074594 - Katayama, Kozo ; et al. | 2002-06-20 |
Semiconductor integrated circuit device having single-element type non-volatile memory elements
App 20010038119 - Komori, Kazuhiro ; et al. | 2001-11-08 |
Semiconductor integrated circuit device and method of manufacturing the same
App 20010013611 - Minami, Shinichi ; et al. | 2001-08-16 |
Method of manufacturing a semiconductor IC device having single transistor type nonvolatile memory cells
Grant 5,904,518 - Komori , et al. May 18, 1 | 1999-05-18 |
Method of manufacturing a semiconductor integrated circuit device having single-element type non-volatile memory elements
Grant 5,656,522 - Komori , et al. August 12, 1 | 1997-08-12 |
Semiconductor integrated circuit device having single-element type nonvolatile memory elements
Grant 5,656,839 - Komori , et al. August 12, 1 | 1997-08-12 |
Semiconductor memory device constituted by single transistor type non-volatile cells and facilitated for both electrical erasing and writing of data
Grant 5,629,541 - Komori , et al. May 13, 1 | 1997-05-13 |
Method of making semiconductor integrated circuit device having single-element type non-volatile memory elements
Grant 5,407,853 - Komori , et al. April 18, 1 | 1995-04-18 |
Semiconductor integrated circuit device having single-element type non-volatile memory elements
Grant 5,300,802 - Komori , et al. April 5, 1 | 1994-04-05 |
Nonvolatile semiconductor memory device
Grant 5,097,446 - Shoji , et al. March 17, 1 | 1992-03-17 |
Non-volatile semiconductor memory device erasing operation
Grant 4,996,571 - Kume , et al. February 26, 1 | 1991-02-26 |
Semiconductor memory device
Grant 4,769,787 - Furusawa , et al. September 6, 1 | 1988-09-06 |
Insulated gate field effect transistor
Grant 4,656,492 - Sunami , et al. April 7, 1 | 1987-04-07 |
Programmable semiconductor integrated circuitry including a programming semiconductor element
Grant 4,455,495 - Masuhara , et al. June 19, 1 | 1984-06-19 |
Information signal transfer method and a charge transfer
Grant 4,013,897 - Kamigaki , et al. March 22, 1 | 1977-03-22 |
Charge-coupled Semiconductor Device Provided With Biasing Charges
Grant 3,852,801 - Itoh , et al. December 3, 1 | 1974-12-03 |
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