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Patent applications and USPTO patent grants for KAIBARA; Kazuhiro.The latest application filed is for "semiconductor device".
Patent | Date |
---|---|
Semiconductor Device App 20210057564 - UMEDA; Hidekazu ;   et al. | 2021-02-25 |
Semiconductor device Grant 10,868,167 - Umeda , et al. December 15, 2 | 2020-12-15 |
Semiconductor Device App 20180145166 - UMEDA; Hidekazu ;   et al. | 2018-05-24 |
Semiconductor device Grant 9,911,843 - Umeda , et al. March 6, 2 | 2018-03-06 |
Semiconductor device Grant 9,698,096 - Hirano , et al. July 4, 2 | 2017-07-04 |
Semiconductor device Grant 9,245,845 - Kaibara , et al. January 26, 2 | 2016-01-26 |
Semiconductor Device App 20160005688 - HIRANO; HIROSHIGE ;   et al. | 2016-01-07 |
Nitride semiconductor device Grant 9,177,915 - Kaibara November 3, 2 | 2015-11-03 |
Semiconductor Device App 20150279781 - KAIBARA; KAZUHIRO ;   et al. | 2015-10-01 |
Semiconductor Device App 20150179741 - UMEDA; HIDEKAZU ;   et al. | 2015-06-25 |
Nitride semiconductor device Grant 8,866,231 - Kaibara , et al. October 21, 2 | 2014-10-21 |
Nitride semiconductor device with metal layer formed on active region and coupled with electrode interconnect Grant 8,748,995 - Kaibara , et al. June 10, 2 | 2014-06-10 |
Nitride Semiconductor Device App 20140124867 - KAIBARA; Kazuhiro ;   et al. | 2014-05-08 |
Nitride Semiconductor Device App 20140103537 - KAIBARA; Kazuhiro | 2014-04-17 |
Nitride Semiconductor Device App 20130119486 - KAIBARA; Kazuhiro ;   et al. | 2013-05-16 |
Transistor for preventing current collapse and having improved leakage current characteristics and method for fabricating the same Grant 7,663,161 - Kaibara , et al. February 16, 2 | 2010-02-16 |
Semiconductor memory and driving method for the same Grant 7,629,635 - Kaibara , et al. December 8, 2 | 2009-12-08 |
Transistor And Method For Fabricating The Same App 20080149965 - KAIBARA; Kazuhiro ;   et al. | 2008-06-26 |
Semiconductor memory and driving method for the same App 20070063238 - Kaibara; Kazuhiro ;   et al. | 2007-03-22 |
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