| Patent | Date |
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Metal cap layer with enhanced etch resistivity for copper-based metal regions in semiconductor devices
Grant 8,432,035 - Kahlert , et al. April 30, 2 | 2013-04-30 |
Increasing reliability of copper-based metallization structures in a microstructure device by using aluminum nitride
Grant 8,384,217 - Streck , et al. February 26, 2 | 2013-02-26 |
Increasing reliability of copper-based metallization structures in a microstructure device by using aluminum nitride
App 20120241958 - STRECK; CHRISTOF ; et al. | 2012-09-27 |
Increasing reliability of copper-based metallization structures in a microstructure device by using aluminum nitride
Grant 8,222,135 - Streck , et al. July 17, 2 | 2012-07-17 |
Method of forming a dielectric cap layer for a copper metallization by using a hydrogen based thermal-chemical treatment
Grant 8,211,795 - Hohage , et al. July 3, 2 | 2012-07-03 |
Metal Cap Layer With Enhanced Etch Resistivity For Copper-based Metal Regions In Semiconductor Devices
App 20120061839 - Kahlert; Volker ; et al. | 2012-03-15 |
Semiconductor device comprising a copper alloy as a barrier layer in a copper metallization layer
Grant 8,124,532 - Streck , et al. February 28, 2 | 2012-02-28 |
Enhancing structural integrity and defining critical dimensions of metallization systems of semiconductor devices by using ALD techniques
Grant 8,105,943 - Streck , et al. January 31, 2 | 2012-01-31 |
Method of fabricating a metal cap layer with enhanced etch resistivity for copper-based metal regions in semiconductor devices
Grant 8,084,354 - Kahlert , et al. December 27, 2 | 2011-12-27 |
Increasing reliability of copper-based metallization structures in a microstructure device by using aluminum nitride
App 20110018134 - Streck; Christof ; et al. | 2011-01-27 |
Etch stop layer for a metallization layer with enhanced adhesion, etch selectivity and hermeticity
Grant 7,867,917 - Hohage , et al. January 11, 2 | 2011-01-11 |
Method of manufracturing increasing reliability of copper-based metallization structures in a microstructure device by using aluminum nitride
Grant 7,829,460 - Streck , et al. November 9, 2 | 2010-11-09 |
Metal Cap Layer With Enhanced Etch Resistivity For Copper-based Metal Regions In Semiconductor Devices
App 20100078821 - Kahlert; Volker ; et al. | 2010-04-01 |
Technique for forming nickel silicide by depositing nickel from a gaseous precursor
Grant 7,687,398 - Streck , et al. March 30, 2 | 2010-03-30 |
Method of forming an insulating capping layer for a copper metallization layer by using a silane reaction
Grant 7,678,699 - Hohage , et al. March 16, 2 | 2010-03-16 |
Enhancing Structural Integrity And Defining Critical Dimensions Of Metallization Systems Of Semiconductor Devices By Using Ald Techniques
App 20100025855 - Streck; Christof ; et al. | 2010-02-04 |
Semiconductor structure and method of forming the same
Grant 7,638,428 - Streck , et al. December 29, 2 | 2009-12-29 |
Semiconductor Device Comprising A Copper Alloy As A Barrier Layer In A Copper Metallization Layer
App 20090305498 - Streck; Christof ; et al. | 2009-12-10 |
Semiconductor device comprising a copper alloy as a barrier layer in a copper metallization layer
Grant 7,595,269 - Streck , et al. September 29, 2 | 2009-09-29 |
Technique for strain engineering in Si-based Transistors by using embedded semiconductor layers including atoms with high covalent radius
Grant 7,544,551 - Streck , et al. June 9, 2 | 2009-06-09 |
Method of forming an insulating capping layer for a copper metallization layer
Grant 7,491,638 - Hohage , et al. February 17, 2 | 2009-02-17 |
Etch stop layer for a metallization layer with enhanced etch selectivity and hermeticity
Grant 7,476,626 - Hohage , et al. January 13, 2 | 2009-01-13 |
Method Of Forming A Dielectric Cap Layer For A Copper Metallization By Using A Hydrogen Based Thermal-chemical Treatment
App 20080286966 - Hohage; Joerg ; et al. | 2008-11-20 |
Method for forming a tungsten interconnect structure with enhanced sidewall coverage of the barrier layer
Grant 7,442,638 - Frohberg , et al. October 28, 2 | 2008-10-28 |
Method for forming a self-aligned nitrogen-containing copper silicide capping layer in a microstructure device
Grant 7,413,985 - Streck , et al. August 19, 2 | 2008-08-19 |
Increasing Reliability Of Copper-based Metallization Structures In A Microstructure Device By Using Aluminum Nitride
App 20080179741 - Streck; Christof ; et al. | 2008-07-31 |
Technique for reducing silicide defects by reducing deleterious effects of particle bombardment prior to silicidation
Grant 7,384,877 - Kahlert , et al. June 10, 2 | 2008-06-10 |
Method For Forming A Self-aligned Nitrogen-containing Copper Silicide Capping Layer In A Microstructure Device
App 20080132064 - Streck; Christof ; et al. | 2008-06-05 |
Semiconductor Structure And Method Of Forming The Same
App 20080128912 - Streck; Christof ; et al. | 2008-06-05 |
Semiconductor Device Including A Porous Low-k Material Layer Stack With Reduced Uv Sensitivity
App 20080099918 - Streck; Christof ; et al. | 2008-05-01 |
Technique For Forming A Silicon Nitride Layer Having High Intrinsic Compressive Stress
App 20070254492 - Baer; Steffen ; et al. | 2007-11-01 |
Method of forming an insulating capping layer for a copper metallization layer by using a silane reaction
App 20070123044 - Hohage; Joerg ; et al. | 2007-05-31 |
A Semiconductor Device Comprising A Copper Alloy As A Barrier Layer In A Copper Metallization Layer
App 20070123043 - Streck; Christof ; et al. | 2007-05-31 |
Technique For Strain Engineering In Si-based Transistors By Using Embedded Semiconductor Layers Including Atoms With High Covalent Radius
App 20070096194 - Streck; Christof ; et al. | 2007-05-03 |
An Etch Stop Layer For A Metallization Layer With Enhanced Adhesion, Etch Selectivity And Hermeticity
App 20070099010 - Hohage; Joerg ; et al. | 2007-05-03 |
Etch Stop Layer For A Metallization Layer With Enhanced Etch Selectivity And Hermeticity
App 20070096108 - Hohage; Joerg ; et al. | 2007-05-03 |
Method For Forming A Tungsten Interconnect Structure With Enhanced Sidewall Coverage Of The Barrier Layer
App 20070077749 - Frohberg; Kai ; et al. | 2007-04-05 |
Technique For Reducing Silicide Defects By Reducing Deleterious Effects Of Particle Bombardment Prior To Silicidation
App 20070045226 - Kahlert; Volker ; et al. | 2007-03-01 |
Method Of Forming An Insulating Capping Layer For A Copper Metallization Layer
App 20070037388 - HOHAGE; JOERG ; et al. | 2007-02-15 |
Technique For Forming Nickel Silicide By Depositing Nickel From A Gaseous Precursor
App 20070004203 - Streck; Christof ; et al. | 2007-01-04 |
Method of forming a conductive barrier layer within critical openings by a final deposition step after a re-sputter deposition
Grant 7,071,096 - Friedemann , et al. July 4, 2 | 2006-07-04 |
Method for cleaning the surface of a substrate
Grant 7,063,091 - Koschinsky , et al. June 20, 2 | 2006-06-20 |
Method of forming a conductive barrier layer having improved coverage within critical openings
Grant 6,984,294 - Friedemann , et al. January 10, 2 | 2006-01-10 |
Method of forming a conductive barrier layer within critical openings by a final deposition step after a re-sputter deposition
App 20050233582 - Friedemann, Michael ; et al. | 2005-10-20 |
Method for cleaning the surface of a substrate
App 20050230344 - Koschinsky, Frank ; et al. | 2005-10-20 |
Method of forming local interconnect barrier layers
App 20050101120 - Hause, Fred ; et al. | 2005-05-12 |
Barrier layer including a titanium nitride liner for a copper metallization layer including a low-k dielectric
App 20050093155 - Kahlert, Volker ; et al. | 2005-05-05 |
Method of forming a conductive barrier layer having improve adhesion and resistivity characteristics
Grant 6,841,468 - Friedemann , et al. January 11, 2 | 2005-01-11 |
Method of forming a conductive barrier layer having improved coverage within critical openings
App 20040168908 - Friedemann, Michael ; et al. | 2004-09-02 |
Method of forming a conductive barrier layer having improve adhesion and resistivity characteristics
App 20040137714 - Friedemann, Michael ; et al. | 2004-07-15 |
Interface void monitoring in a damascene process
Grant 6,716,650 - Langer , et al. April 6, 2 | 2004-04-06 |
Method for forming an improved metal silicide portion in a silicon-containing conductive region in an integrated circuit
App 20030186523 - Wieczorek, Karsten ; et al. | 2003-10-02 |
Metallization process sequence for a barrier metal layer
Grant 6,613,660 - Kahlert , et al. September 2, 2 | 2003-09-02 |
Metallization process sequence
App 20030054625 - Kahlert, Volker ; et al. | 2003-03-20 |
Interface void monitoring in a damascene process
App 20020168786 - Langer, Eckhard ; et al. | 2002-11-14 |
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