Kadokura; Hidekimi

Patent Applications and Registrations

Patent applications and USPTO patent grants for Kadokura; Hidekimi.The latest application filed is for "process for forming the strontium-containing thin film".

Company Profile

0.12.6

Kadokura; Hidekimi - Sakado JP
Kadokura; Hidekimi - Tokyo JP
KADOKURA; Hidekimi - Sakado-shi JP
Kadokura; Hidekimi - Niihama JP

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Process for forming the strontium-containing thin film Grant 8,293,327 - Kadokura , et al. October 23, 2	2012-10-23
Method for forming SrTiO.sub.3 film Grant 7,816,282 - Kawano , et al. October 19, 2	2010-10-19
Raw material for forming a strontium-containing thin film and process for preparing the raw material Grant 7,635,441 - Kadokura , et al. December 22, 2	2009-12-22
Raw Material For Forming A Strontium-containing Thin Film And Process For Preparing The Raw Material App 20090001618 - KADOKURA; Hidekimi ; et al.	2009-01-01
Process For Forming The Strontium-containing Thin Film App 20090004383 - KADOKURA; Hidekimi ; et al.	2009-01-01
Method For Forming Srtio3 Film App 20080175994 - KAWANO; Yumiko ; et al.	2008-07-24
High-purity lanthanum isoproxide and a process for producing the same Grant 6,930,177 - Kadokura , et al. August 16, 2	2005-08-16
Method or process for producing PZT films at low substrate temperatures by chemical vapor deposition Grant 6,872,419 - Kadokura , et al. March 29, 2	2005-03-29
Process for producing PZT films by chemical vapor deposition method App 20030153100 - Kadokura, Hidekimi ; et al.	2003-08-14
Tantalum Tertiary Amylimido Tris (dimethylamide), A Process For Producing The Same, A Solution Of Starting Material For Mocvd Using The Same, And A Method Of Forming A Tantalum Nitride Film Using The Same Grant 6,593,484 - Yasuhara , et al. July 15, 2	2003-07-15
High-purity lanthanum isopropoxide and a process for producing the same App 20030055228 - Kadokura, Hidekimi ; et al.	2003-03-20
Tantalum tertiary amylimido tris (dimethylamide), a process for producing the same, a solution of starting material for MOCVD using the same, and a method of forming a tantalum nitride film using the same App 20020115886 - Yasuhara, Sakiko ; et al.	2002-08-22
Process for producing bis(alkyl-cyclopentadienyl)ruthenium complexes and process for producing ruthenium-containing films by using the same Grant 6,002,036 - Kadokura December 14, 1	1999-12-14
Lamina and a cosmetic comprising the same Grant 5,066,530 - Kadokura , et al. November 19, 1	1991-11-19
Lamina and a cosmetic comprising the same Grant 4,882,143 - Kadokura , et al. November 21, 1	1989-11-21
Abrasive, production thereof and use thereof in magnetic recording medium Grant 4,740,423 - Kadokura , et al. April 26, 1	1988-04-26
Magnetic recording medium Grant 4,671,993 - Kadokura , et al. June 9, 1	1987-06-09
Preparation of aluminum hydrate Grant 3,954,958 - Matsui , et al. May 4, 1	1976-05-04

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