Patent | Date |
---|
Deep Gate-All-Around Semiconductor Device having Germanium or Group III-V Active Layer App 20210167216 - Pillarisetty; Ravi ;   et al. | 2021-06-03 |
Deep gate-all-around semiconductor device having germanium or group III-V active layer Grant 10,950,733 - Pillarisetty , et al. March 16, 2 | 2021-03-16 |
Self-limiting and saturating chemical vapor deposition of a silicon bilayer and ALD Grant 10,553,425 - Kachian , et al. Fe | 2020-02-04 |
Methods Of Treating A Substrate To Form A Layer Thereon For Application In Selective Deposition Processes App 20190326114 - KACHIAN; JESSICA S. ;   et al. | 2019-10-24 |
Non-planar gate all-around device and method of fabrication thereof Grant 10,418,487 - Rachmady , et al. Sept | 2019-09-17 |
CVD silicon monolayer formation method and gate oxide ALD formation on semiconductor materials Grant 10,373,824 - Kummel , et al. | 2019-08-06 |
Apparatus And Method For Selective Deposition App 20190148131 - DUBE; Abhishek ;   et al. | 2019-05-16 |
Apparatus and method for selective deposition Grant 10,199,215 - Dube , et al. Fe | 2019-02-05 |
Deep Gate-all-around Semiconductor Device Having Germanium Or Group Iii-v Active Layer App 20180301563 - Pillarisetty; Ravi ;   et al. | 2018-10-18 |
Deep gate-all-around semiconductor device having germanium or group III-V active layer Grant 10,026,845 - Pillarisetty , et al. July 17, 2 | 2018-07-17 |
Semiconductor devices with germanium-rich active layers and doped transition layers Grant 10,008,565 - Rachmady , et al. June 26, 2 | 2018-06-26 |
FCVD line bending resolution by deposition modulation Grant 9,896,326 - Liang , et al. February 20, 2 | 2018-02-20 |
Cvd Silicon Monolayer Formation Method And Gate Oxide Ald Formation On Semiconductor Materials App 20180033610 - KUMMEL; Andrew C. ;   et al. | 2018-02-01 |
Self-limiting And Saturating Chemical Vapor Deposition Of A Silicon Bilayer And Ald App 20180019116 - KACHIAN; Jessica S. ;   et al. | 2018-01-18 |
Apparatus And Method For Selective Deposition App 20170352531 - DUBE; Abhishek ;   et al. | 2017-12-07 |
CVD silicon monolayer formation method and gate oxide ALD formation on III-V materials Grant 9,824,889 - Kummel , et al. November 21, 2 | 2017-11-21 |
Semiconductor Devices With Germanium-rich Active Layers And Doped Transition Layers App 20170288019 - RACHMADY; Willy ;   et al. | 2017-10-05 |
Self-limiting and saturating chemical vapor deposition of a silicon bilayer and ALD Grant 9,773,663 - Kachian , et al. September 26, 2 | 2017-09-26 |
Apparatus and method for selective deposition Grant 9,768,013 - Dube , et al. September 19, 2 | 2017-09-19 |
Deep Gate-all-around Semiconductor Device Having Germanium Or Group Iii-v Active Layer App 20170194506 - Pillarisetty; Ravi ;   et al. | 2017-07-06 |
Semiconductor devices with germanium-rich active layers and doped transition layers Grant 9,691,848 - Rachmady , et al. June 27, 2 | 2017-06-27 |
Deep gate-all-around semiconductor device having germanium or group III-V active layer Grant 9,640,671 - Pillarisetty , et al. May 2, 2 | 2017-05-02 |
Apparatus And Method For Selective Deposition App 20170084449 - DUBE; Abhishek ;   et al. | 2017-03-23 |
Semiconductor Devices With Germanium-rich Active Layers And Doped Transition Layers App 20170047401 - Rachmady; Willy ;   et al. | 2017-02-16 |
Low Temperature Ald On Semiconductor And Metallic Surfaces App 20170040158 - KACHIAN; Jessica S. ;   et al. | 2017-02-09 |
Self-limiting And Saturating Chemical Vapor Deposition Of A Silicon Bilayer And Ald App 20170040159 - KACHIAN; Jessica S. ;   et al. | 2017-02-09 |
Semiconductor devices with germanium-rich active layers and doped transition layers Grant 9,490,329 - Rachmady , et al. November 8, 2 | 2016-11-08 |
Deep Gate-all-around Semiconductor Device Having Germanium Or Group Iii-v Active Layer App 20160233344 - Pillarisetty; Ravi ;   et al. | 2016-08-11 |
Fcvd Line Bending Resolution By Deposition Modulation App 20160181089 - LIANG; Jingmei ;   et al. | 2016-06-23 |
Deep gate-all-around semiconductor device having germanium or group III-V active layer Grant 9,337,291 - Pillarisetty , et al. May 10, 2 | 2016-05-10 |
Non-planar Gate All-around Device And Method Of Fabrication Thereof App 20160079422 - Rachmady; Willy ;   et al. | 2016-03-17 |
Semiconductor devices with germanium-rich active layers & doped transition layers App 20160049476 - Rachmady; Willy ;   et al. | 2016-02-18 |
Non-planar gate all-around device and method of fabrication thereof Grant 9,252,275 - Rachmady , et al. February 2, 2 | 2016-02-02 |
Deep Gate-all-around Semiconductor Device Having Germanium Or Group Iii-v Active Layer App 20150349077 - Pillarisetty; Ravi ;   et al. | 2015-12-03 |
Cvd Silicon Monolayer Formation Method And Gate Oxide Ald Formation On Iii-v Materials App 20150303058 - KUMMEL; Andrew C. ;   et al. | 2015-10-22 |
Semiconductor devices with germanium-rich active layers and doped transition layers Grant 9,159,787 - Rachmady , et al. October 13, 2 | 2015-10-13 |
Deep gate-all-around semiconductor device having germanium or group III-V active layer Grant 9,136,343 - Pillarisetty , et al. September 15, 2 | 2015-09-15 |
Non-planar Gate All-around Device And Method Of Fabrication Thereof App 20150144880 - Rachmady; Willy ;   et al. | 2015-05-28 |
Non-planar gate all-around device and method of fabrication thereof Grant 8,987,794 - Rachmady , et al. March 24, 2 | 2015-03-24 |
Semiconductor Devices With Germanium-rich Active Layers And Doped Transition Layers App 20140291772 - RACHMADY; Willy ;   et al. | 2014-10-02 |
Non-planar Gate All-around Device And Method Of Fabrication Thereof App 20140225065 - Rachmady; Willy ;   et al. | 2014-08-14 |
Deep Gate-all-around Semiconductor Device Having Germanium Or Group Iii-v Active Layer App 20140203327 - Pillarisetty; Ravi ;   et al. | 2014-07-24 |
Semiconductor Devices With Germanium-rich Active Layers & Doped Transition Layers App 20140167108 - RACHMADY; Willy ;   et al. | 2014-06-19 |
Semiconductor devices with germanium-rich active layers and doped transition layers Grant 8,748,940 - Rachmady , et al. June 10, 2 | 2014-06-10 |
Non-planar Semiconductor Device Having Germanium-based Active Region With Release Etch-passivation Surface App 20140091279 - Kachian; Jessica S. ;   et al. | 2014-04-03 |