loadpatents
name:-0.020593881607056
name:-0.023029088973999
name:-0.0012838840484619
KACHI; Tetsu Patent Filings

KACHI; Tetsu

Patent Applications and Registrations

Patent applications and USPTO patent grants for KACHI; Tetsu.The latest application filed is for "gate switching device and method manufacturing the same".

Company Profile
0.21.24
  • KACHI; Tetsu - Nagoya-shi JP
  • Kachi; Tetsu - Nagakute JP
  • Kachi; Tetsu - Nisshin JP
  • KACHI; Tetsu - Nagakute-city JP
  • KACHI; Tetsu - Nagakute-shi JP
  • Kachi; Tetsu - Nisshin-city JP
  • Kachi; Tetsu - Nisshin-shi JP
  • Kachi; Tetsu - Nissin JP
  • Kachi; Tetsu - Aichi-ken JP
  • Kachi; Tetsu - Nagoya JP
  • Kachi; Tetsu - Aichi JP
  • Kachi, Tetsu - Aichi-gun JP
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Gate Switching Device And Method Manufacturing The Same
App 20190019873 - SHIOZAKI; Koji ;   et al.
2019-01-17
Semiconductor device and method for producing same
Grant 10,121,663 - Tsuchiya , et al. November 6, 2
2018-11-06
Semiconductor device with high electron mobility transistor
Grant 9,818,856 - Hoshi , et al. November 14, 2
2017-11-14
III-V HEMT devices
Grant 9,735,260 - Sugimoto , et al. August 15, 2
2017-08-15
Semiconductor Device And Method For Producing Same
App 20170162391 - TSUCHIYA; Yoshinori ;   et al.
2017-06-08
Semiconductor device
Grant 9,337,267 - Uesugi , et al. May 10, 2
2016-05-10
III-V HEMT devices
Grant 9,184,271 - Sugimoto , et al. November 10, 2
2015-11-10
Semiconductor Device
App 20150221759 - UESUGI; Tsutomu ;   et al.
2015-08-06
Semiconductor Device
App 20140231874 - Hoshi; Shinichi ;   et al.
2014-08-21
Iii-v Hemt Devices
App 20140175518 - Sugimoto; Masahiro ;   et al.
2014-06-26
Semiconductor device having hetero junction
Grant 8,299,498 - Uesugi , et al. October 30, 2
2012-10-30
Nitride semiconductor device including gate insulating portion containing AIN
Grant 8,222,675 - Sugimoto , et al. July 17, 2
2012-07-17
Transistor
Grant 8,188,514 - Sugimoto , et al. May 29, 2
2012-05-29
Semiconductor device
Grant 8,110,870 - Sugimoto , et al. February 7, 2
2012-02-07
Semiconductor device having vertical electrodes structure
Grant 8,008,749 - Sugimoto , et al. August 30, 2
2011-08-30
Light-emitting device including light-emitting diode and stacked light-emitting phosphor layers
Grant 7,897,987 - Inoue , et al. March 1, 2
2011-03-01
Iii-v Hemt Devices
App 20100295098 - SUGIMOTO; Masahiro ;   et al.
2010-11-25
Semiconductor devices
Grant 7,800,130 - Sugimoto , et al. September 21, 2
2010-09-21
III-V hemt devices
Grant 7,777,252 - Sugimoto , et al. August 17, 2
2010-08-17
Semiconductor Device Having Hetero Junction
App 20100117119 - Uesugi; Tsutomu ;   et al.
2010-05-13
Semiconductor Device
App 20100044753 - SUGIMOTO; Masahiro ;   et al.
2010-02-25
Light-emitting device including light-emitting diode
App 20090242917 - Inoue; Mitsuhiro ;   et al.
2009-10-01
Semiconductor devices and method of manufacturing them
App 20090134456 - Sugimoto; Masahiro ;   et al.
2009-05-28
Semiconductor Devices
App 20080149964 - Sugimoto; Masahiro ;   et al.
2008-06-26
Semiconductor Devices And Method Of Manufacturing Them
App 20080128862 - Sugimoto; Masahiro ;   et al.
2008-06-05
Method for producing p-type group III nitride semiconductor and method for producing electrode for p-type group III nitride semiconductor
App 20080090395 - Sugimoto; Masahiro ;   et al.
2008-04-17
III-V Hemt Devices
App 20080073652 - Sugimoto; Masahiro ;   et al.
2008-03-27
Light source
Grant 7,342,364 - Kato , et al. March 11, 2
2008-03-11
Group III nitride semiconductor device
Grant 7,211,839 - Kachi , et al. May 1, 2
2007-05-01
Nitride semiconductor light emitting diode
Grant 7,084,432 - Kachi , et al. August 1, 2
2006-08-01
Light source
App 20060061302 - Kato; Satoru ;   et al.
2006-03-23
Light-emitting device using a group III nitride compound semiconductor and a method of manufacture
Grant 6,960,485 - Uemura , et al. November 1, 2
2005-11-01
Method of manufacturing semiconductor device and semiconductor device
Grant 6,936,484 - Kanechika , et al. August 30, 2
2005-08-30
Light-emitting device using a group III nitride compound semiconductor and a method of manufacture
App 20050133799 - Uemura, Toshiya ;   et al.
2005-06-23
Group III nitride semiconductor device
App 20040157355 - Kachi, Tetsu ;   et al.
2004-08-12
Method of manufacturing semiconductor device and semiconductor device
App 20040079962 - Kanechika, Masakazu ;   et al.
2004-04-29
Semiconductor crystal growing method and semiconductor light-emitting device
App 20040077166 - Nagal, Seiji ;   et al.
2004-04-22
Nitride semiconductor light emitting diode
App 20040016937 - Kachi, Tetsu ;   et al.
2004-01-29
Group III nitride compound semiconductor light-emitting element
Grant 6,649,943 - Shibata , et al. November 18, 2
2003-11-18
Light-emitting device using a group III nitride compound semiconductor and a method of manufacture
App 20030151058 - Uemura, Toshiya ;   et al.
2003-08-14
Semiconductor light-emitting element and optical transmission device
App 20030099445 - Kato, Satoru ;   et al.
2003-05-29
Group III nitride compound semiconductor light-emitting element
App 20030001170 - Shibata, Naoki ;   et al.
2003-01-02
Light-emitting device using a group III nitride compound semiconductor and a method of manufacture
App 20010028062 - Uemura, Toshiya ;   et al.
2001-10-11
Group III nitride compound semiconductor laser diodes
Grant 5,889,806 - Nagai , et al. March 30, 1
1999-03-30

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