Kabir; Abul Ehsanul
Patent Applications and Registrations
Patent applications and USPTO patent grants for Kabir; Abul Ehsanul.The latest application filed is for "method for controlling an n-type dopant concentration depth profile in bipolar transistor epitaxial layers".
- Kabir; Abul Ehsanul - Belmont CA
- Kabir; Abul Ehsanul - Sunnyvale CA
| Patent | Date |
|---|---|
| Method for controlling an N-type dopant concentration depth profile in bipolar transistor epitaxial layers Grant 6,346,452 - Kabir , et al. February 12, 2 | 2002-02-12 |
| Tungsten silicide/ tungsten polycide anisotropic dry etch process Grant 5,856,239 - Bashir , et al. January 5, 1 | 1999-01-05 |
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