loadpatents
name:-0.029869794845581
name:-0.028614044189453
name:-0.0048489570617676
Jung; Ryan O. Patent Filings

Jung; Ryan O.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Jung; Ryan O..The latest application filed is for "gate cut with high selectivity to preserve interlevel dielectric layer".

Company Profile
4.26.27
  • Jung; Ryan O. - Glenmont NY
  • Jung; Ryan O. - Rensselaer NY
  • Jung; Ryan O. - Albany NY US
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Gate cut with high selectivity to preserve interlevel dielectric layer
Grant 10,957,544 - Greene , et al. March 23, 2
2021-03-23
Method and structure for enabling high aspect ratio sacrificial gates
Grant 10,629,698 - Cheng , et al.
2020-04-21
Gate cut with high selectivity to preserve interlevel dielectric layer
Grant 10,586,706 - Greene , et al.
2020-03-10
Method and structure for enabling controlled spacer RIE
Grant 10,446,452 - Cheng , et al. Oc
2019-10-15
Gate Cut With High Selectivity To Preserve Interlevel Dielectric Layer
App 20180315606 - Greene; Andrew M. ;   et al.
2018-11-01
Method And Structure For Enabling High Aspect Ratio Sacrificial Gates
App 20180122643 - CHENG; Kangguo ;   et al.
2018-05-03
Method and structure for enabling high aspect ratio sacrificial gates
Grant 9,842,739 - Cheng , et al. December 12, 2
2017-12-12
Gate cut with high selectivity to preserve interlevel dielectric layer
Grant 9,837,276 - Greene , et al. December 5, 2
2017-12-05
Method to form dual channel semiconductor material fins
Grant 9,786,666 - Cheng , et al. October 10, 2
2017-10-10
Method And Structure For Enabling Controlled Spacer Rie
App 20170221773 - Cheng; Kangguo ;   et al.
2017-08-03
Gate Cut With High Selectivity To Preserve Interlevel Dielectric Layer
App 20170221721 - Greene; Andrew M. ;   et al.
2017-08-03
Gate cut with high selectivity to preserve interlevel dielectric layer
Grant 9,659,786 - Greene , et al. May 23, 2
2017-05-23
Method and structure for enabling high aspect ratio sacrificial gates
Grant 9,659,779 - Cheng , et al. May 23, 2
2017-05-23
Method and structure for enabling controlled spacer RIE
Grant 9,627,277 - Cheng , et al. April 18, 2
2017-04-18
Trench formation for dielectric filled cut region
Grant 9,601,335 - Greene , et al. March 21, 2
2017-03-21
Trench formation for dielectric filled cut region
Grant 9,601,366 - Greene , et al. March 21, 2
2017-03-21
Trench Formation For Dielectric Filled Cut Region
App 20170033196 - Greene; Andrew M. ;   et al.
2017-02-02
Trench Formation For Dielectric Filled Cut Region
App 20170033000 - Greene; Andrew M. ;   et al.
2017-02-02
Gate Cut With High Selectivity To Preserve Interlevel Dielectric Layer
App 20170018437 - Greene; Andrew M. ;   et al.
2017-01-19
Gate Cut With High Selectivity To Preserve Interlevel Dielectric Layer
App 20170018628 - Greene; Andrew M. ;   et al.
2017-01-19
Junction overlap control in a semiconductor device using a sacrificial spacer layer
Grant 9,530,864 - Bentley , et al. December 27, 2
2016-12-27
Method To Form Dual Channel Semiconductor Material Fins
App 20160372473 - Cheng; Kangguo ;   et al.
2016-12-22
Method And Structure For Enabling Controlled Spacer Rie
App 20160365292 - Cheng; Kangguo ;   et al.
2016-12-15
Method And Structure For Enabling High Aspect Ratio Sacrificial Gates
App 20160233095 - CHENG; Kangguo ;   et al.
2016-08-11
Method to form dual channel semiconductor material fins
Grant 9,362,179 - Cheng , et al. June 7, 2
2016-06-07
Wafer backside particle mitigation
Grant 9,318,347 - Bergendahl , et al. April 19, 2
2016-04-19
Method and structure for enabling high aspect ratio sacrificial gates
Grant 9,318,574 - Cheng , et al. April 19, 2
2016-04-19
Methods Of Patterning Features Having Differing Widths
App 20160064236 - Jang; Linus ;   et al.
2016-03-03
Wafer Backside Particle Mitigation
App 20160049311 - Bergendahl; Marc A. ;   et al.
2016-02-18
Junction Overlap Control In A Semiconductor Device Using A Sacrificial Spacer Layer
App 20150380514 - Bentley; Steven J. ;   et al.
2015-12-31
Method And Structure For Enabling High Aspect Ratio Sacrificial Gates
App 20150372127 - CHENG; Kangguo ;   et al.
2015-12-24
Method And Structure For Enabling High Aspect Ratio Sacrificial Gates
App 20150372113 - CHENG; Kangguo ;   et al.
2015-12-24
Methods of patterning features having differing widths
Grant 9,214,360 - Jang , et al. December 15, 2
2015-12-15
Wafer backside particle mitigation
Grant 9,184,042 - Bergendahl , et al. November 10, 2
2015-11-10
Methods Of Patterning Features Having Differing Widths
App 20140329388 - Jang; Linus ;   et al.
2014-11-06
Method of simultaneously forming multiple structures having different critical dimensions using sidewall transfer
Grant 8,735,296 - Jung , et al. May 27, 2
2014-05-27
Three photomask sidewall image transfer method
Grant 8,716,133 - Chen , et al. May 6, 2
2014-05-06
Sidewall image transfer process with multiple critical dimensions
Grant 8,673,165 - Raghunathan , et al. March 18, 2
2014-03-18
Three Photomask Sidewall Image Transfer Method
App 20140057436 - Chen; Shyng-Tsong ;   et al.
2014-02-27
Image transfer process employing a hard mask layer
Grant 8,637,406 - Jung , et al. January 28, 2
2014-01-28
Image Transfer Process Employing A Hard Mask Layer
App 20140023834 - Jung; Ryan O. ;   et al.
2014-01-23
Image Transfer Process Employing A Hard Mask Layer
App 20140024219 - Jung; Ryan O. ;   et al.
2014-01-23
Method Of Simultaneously Forming Multiple Structures Having Different Critical Dimensions Using Sidewall Transfer
App 20140024209 - Jung; Ryan O. ;   et al.
2014-01-23
Sidewall Image Transfer Process With Multiple Critical Dimensions
App 20130089984 - Raghunathan; Sudharshanan ;   et al.
2013-04-11

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