| Patent | Date |
|---|
Ferroelectric memory device
Grant 7,598,556 - Mikawa , et al. October 6, 2 | 2009-10-06 |
Semiconductor device and method for fabricating the same
Grant 7,557,011 - Mikawa , et al. July 7, 2 | 2009-07-07 |
Capacitor and method for fabricating the same
Grant 7,413,949 - Mikawa , et al. August 19, 2 | 2008-08-19 |
Semiconductor device and method for fabricating the same
Grant 7,326,990 - Mikawa , et al. February 5, 2 | 2008-02-05 |
Capacitor device having three-dimensional structure
App 20070235787 - Nagano; Yoshihisa ; et al. | 2007-10-11 |
Semiconductor device and method for fabricating the same
Grant 7,180,122 - Mikawa , et al. February 20, 2 | 2007-02-20 |
Method for fabricating capacitor device
Grant 7,157,348 - Mikawa , et al. January 2, 2 | 2007-01-02 |
Semiconductor device and method for fabricating the same
App 20060220091 - Mikawa; Takumi ; et al. | 2006-10-05 |
Semiconductor device and method for fabricating the same
App 20060124983 - Kutsunai; Toshie ; et al. | 2006-06-15 |
Memory device with hydrogen-blocked ferroelectric capacitor
Grant 7,060,552 - Mikawa , et al. June 13, 2 | 2006-06-13 |
Semiconductor device and method for fabricating the same
App 20060079066 - Mikawa; Takumi ; et al. | 2006-04-13 |
Semiconductor device and method for fabricating the same
App 20050285170 - Mikawa, Takumi ; et al. | 2005-12-29 |
Ferroelectric memory device and method for fabricating the same
Grant 6,963,095 - Mikawa , et al. November 8, 2 | 2005-11-08 |
Semiconductor device and method for fabricating the same
Grant 6,960,800 - Mikawa , et al. November 1, 2 | 2005-11-01 |
Capacitor and method for fabricating the same
App 20050199928 - Mikawa, Takumi ; et al. | 2005-09-15 |
Method of fabricating semiconductor device with capacitor covered by a TEOS-03 film
Grant 6,939,725 - Kutsunai , et al. September 6, 2 | 2005-09-06 |
Capacitor and method for fabricating the same
Grant 6,891,715 - Mikawa , et al. May 10, 2 | 2005-05-10 |
Semiconductor device and method for fabricating the same
App 20050087788 - Kutsunai, Toshie ; et al. | 2005-04-28 |
Semiconductor device and method for fabricating the same
App 20050082638 - Nagano, Yoshihisa ; et al. | 2005-04-21 |
Semiconductor device and method for fabricating the same
Grant 6,849,887 - Nagano , et al. February 1, 2 | 2005-02-01 |
Semiconductor device and method for fabricating the same
App 20050012133 - Mikawa, Takumi ; et al. | 2005-01-20 |
Capacitance element and method of manufacturing the same
Grant 6,818,498 - Mikawa , et al. November 16, 2 | 2004-11-16 |
Semiconductor memory device and method for manufacturing the same
App 20040206997 - Mikawa, Takumi ; et al. | 2004-10-21 |
Semiconductor device and method and system for fabricating the same
App 20040155279 - Kutsunai, Toshie ; et al. | 2004-08-12 |
Semiconductor device with an oxygen diffusion barrier layer formed from a composite nitride
Grant 6,753,566 - Kutsunai , et al. June 22, 2 | 2004-06-22 |
Semiconductor memory with hydrogen barrier
Grant 6,750,492 - Mikawa , et al. June 15, 2 | 2004-06-15 |
Semiconductor device and method and system for fabricating the same
Grant 6,737,697 - Kutsunai , et al. May 18, 2 | 2004-05-18 |
Semiconductor device and method for fabricating the same
Grant 6,723,637 - Kutsunai , et al. April 20, 2 | 2004-04-20 |
Ferroelectric memory device and method for fabricating the same
App 20040021158 - Mikawa, Takumi ; et al. | 2004-02-05 |
Capacitor and method for fabricating the same
App 20040004793 - Mikawa, Takumi ; et al. | 2004-01-08 |
Semiconductor device and method for fabricating the same
App 20030207535 - Kutsunai, Toshie ; et al. | 2003-11-06 |
Semiconductor device and method for fabricating the same
App 20030197212 - Kutsunai, Toshie ; et al. | 2003-10-23 |
Capacitance element and method of manufacturing the same
App 20030181017 - Mikawa, Takumi ; et al. | 2003-09-25 |
Method for fabricating capacitor device
App 20030175999 - Mikawa, Takumi ; et al. | 2003-09-18 |
Method for fabricating capacitor device
App 20030175998 - Nagano, Yoshihisa ; et al. | 2003-09-18 |
Method for fabricating ferroelectric memory device and method for fabricating the same
Grant 6,602,721 - Mikawa , et al. August 5, 2 | 2003-08-05 |
Semiconductor device with oxygen diffusion barrier layer termed from composite nitride
Grant 6,590,252 - Kutsunai , et al. July 8, 2 | 2003-07-08 |
Semiconductor memory device and method for manufacturing the same
App 20030042522 - Mikawa, Takumi ; et al. | 2003-03-06 |
Method of making a semiconductor device with capacitor element
App 20020155663 - Nagano, Yoshihisa ; et al. | 2002-10-24 |
Semiconductor device and method for fabricating the same
App 20020149082 - Nagano, Yoshihisa ; et al. | 2002-10-17 |
Ferroelectric memory device and method for fabricating the same
App 20020115226 - Mikawa, Takumi ; et al. | 2002-08-22 |
Semiconductor Device And Method For Fabricating The Same
App 20020056861 - NAGANO, YOSHIHISA ; et al. | 2002-05-16 |
Semiconductor device and method for fabricating the same
App 20020055223 - Kutsunai, Toshie ; et al. | 2002-05-09 |
Semiconductor device having a ferroelectric capacitor with tensile stress properties
App 20020047111 - Judai, Yuji | 2002-04-25 |
Semiconductor device and method for fabricating the same
App 20020030243 - Mikawa, Takumi ; et al. | 2002-03-14 |
Semiconductor Device Having A Ferroelectric Capacitor With Tensile Stress Properties
App 20020000588 - JUDAI, YUJI | 2002-01-03 |
Semiconductor Device With Capacitor Elements Substantially Free Of Titanium
App 20020000589 - NAGANO, YOSHIHISA ; et al. | 2002-01-03 |
Semiconductor device and method and system for fabricating the same
App 20010028074 - Kutsunai, Toshie ; et al. | 2001-10-11 |
Semiconductor Device And Method For Providing A Contact Hole Formed In An Insulating Film
App 20010023129 - NAKAO, KEISAKU ; et al. | 2001-09-20 |
Semiconductor device and method for fabricating the same
Grant 6,174,822 - Nagano , et al. January 16, 2 | 2001-01-16 |
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