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Variable Resistance Memory Devices And Methods Of Forming Variable Resistance Memory Devices App 20100173479 - Joo; Heung Jin | 2010-07-08 |
Stacked ferroelectric memory devices, methods of manufacturing the same, ferroelectric memory circuits and methods of driving the same Grant 7,586,774 - Joo , et al. September 8, 2 | 2009-09-08 |
Semiconductor devices having a metal-insulator-metal capacitor and methods of forming the same Grant 7,495,311 - Kim , et al. February 24, 2 | 2009-02-24 |
Node structures under capacitor in ferroelectric random access memory device and methods of forming the same App 20080111171 - Joo; Heung-Jin ;   et al. | 2008-05-15 |
Ferroelectric Random Access Memory And Methods Of Fabricating The Same App 20080087926 - Park; Jung-Hoon ;   et al. | 2008-04-17 |
Ferroelectric integrated circuit devices having an oxygen penetration path Grant 7,348,616 - Joo , et al. March 25, 2 | 2008-03-25 |
Contact structure having conductive oxide layer, ferroelectric random access memory device employing the same and methods of fabricating the same App 20080067566 - Choi; Do-Yeon ;   et al. | 2008-03-20 |
Semiconductor memory device and method for forming the same App 20080061334 - Jung; Ju-Young ;   et al. | 2008-03-13 |
FeRAM device and method for manufacturing the same Grant 7,294,876 - Joo , et al. November 13, 2 | 2007-11-13 |
Multiple stacked capacitors formed within an opening with thick capacitor dielectric Grant 7,262,453 - Joo August 28, 2 | 2007-08-28 |
Stacked Ferroelectric Memory Devices, Methods Of Manufacturing The Same, Ferroelectric Memory Circuits And Methods Of Driving The Same App 20070189056 - Joo; Heung-Jin ;   et al. | 2007-08-16 |
Memory Devices Employing Ferroelectric Layer as Information Storage Elements and Methods of Fabricating the Same App 20070158731 - Bae; Byoung-Jae ;   et al. | 2007-07-12 |
Semiconductor devices having capacitors of metal-insulator-metal structure with coextensive oxidation barrier pattern and lower electrode bottom and methods of forming the same Grant 7,144,772 - Lee , et al. December 5, 2 | 2006-12-05 |
Multiple stacked capacitors formed within an opening with thick capacitor dielectric App 20060261396 - Joo; Heung-Jin | 2006-11-23 |
Multiple stacked capacitors formed within an opening with thick capacitor dielectric Grant 7,105,418 - Joo September 12, 2 | 2006-09-12 |
FeRAM device and method for manufacturing the same App 20060157763 - Joo; Heung-Jin ;   et al. | 2006-07-20 |
Ferroelectric memory devices with enhanced ferroelectric properties and methods for fabricating such memory devices Grant 7,052,951 - Joo , et al. May 30, 2 | 2006-05-30 |
Ferroelectric integrated circuit devices having an oxygen penetration path and methods for manufacturing the same App 20060108622 - Joo; Heung-jin ;   et al. | 2006-05-25 |
Semiconductor devices having a metal-insulator-metal capacitor and methods of forming the same App 20060006447 - Kim; Hyun-Ho ;   et al. | 2006-01-12 |
Ferroelectric integrated circuit devices having an oxygen penetration path Grant 6,979,881 - Joo , et al. December 27, 2 | 2005-12-27 |
Multiple stacked capacitors formed within an opening with thick capacitor dielectric App 20050170599 - Joo, Heung-Jin | 2005-08-04 |
Methods for forming electronic devices including capacitor structures Grant 6,911,362 - Kim , et al. June 28, 2 | 2005-06-28 |
Ferroelectric memory devices with enhanced ferroelectric properties and methods for fabricating such memory devices App 20040164323 - Joo, Heung-Jin ;   et al. | 2004-08-26 |
Semiconductor devices having capacitors of metal-insulator-metal structure with coextensive oxidation barrier pattern and lower electrode bottom and methods of forming the same App 20040108536 - Lee, Sung-Yung ;   et al. | 2004-06-10 |
Methods for forming electronic devices including capacitor structures App 20040042134 - Kim, Ki-Nam ;   et al. | 2004-03-04 |
Ferroelectric integrated circuit devices having an oxygen penetration path and methods for manufacturing the same App 20030141527 - Joo, Heung-jin ;   et al. | 2003-07-31 |