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Joo; Heung Jin Patent Filings

Joo; Heung Jin

Patent Applications and Registrations

Patent applications and USPTO patent grants for Joo; Heung Jin.The latest application filed is for "semiconductor device".

Company Profile
4.18.24
  • Joo; Heung Jin - Suwon-si KR
  • Joo; Heung-Jin - Gyeonggi-do KR
  • Joo; Heung-jin - Kyungki-do KR
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Three-dimensional semiconductor memory devices
Grant 10,937,797 - Seo , et al. March 2, 2
2021-03-02
Semiconductor device
Grant 10,896,917 - Song , et al. January 19, 2
2021-01-19
Semiconductor Device
App 20200127009 - SONG; Min Sung ;   et al.
2020-04-23
Semiconductor device
Grant 10,529,736 - Song , et al. J
2020-01-07
Three-dimensional Semiconductor Memory Devices
App 20190304991 - SEO; Seongjun ;   et al.
2019-10-03
Semiconductor Device
App 20190172840 - SONG; Min Sung ;   et al.
2019-06-06
Variable resistance memory devices having reduced reset current
Grant 8,748,884 - Jeong , et al. June 10, 2
2014-06-10
Methods of forming variable-resistance memory devices and devices formed thereby
Grant 8,598,010 - Joo , et al. December 3, 2
2013-12-03
Phase Change Memory Device And Method Of Manufacturing The Same
App 20120228577 - PARK; Kyusul ;   et al.
2012-09-13
Variable resistance memory devices and methods of forming variable resistance memory devices
Grant 8,071,423 - Joo December 6, 2
2011-12-06
Methods of Forming Variable-Resistance Memory Devices and Devices Formed Thereby
App 20110263093 - Joo; Heung Jin ;   et al.
2011-10-27
Variable Resistance Memory Devices And Methods For Fabricating The Same
App 20110248235 - Jeong; Ji-Hyun ;   et al.
2011-10-13
Variable Resistance Memory, Operating Method And System
App 20110188292 - JOO; Heung Jin ;   et al.
2011-08-04
Phase-Changeable Random Access Memory Devices Including Barrier Layers and Metal Silicide Layers
App 20100181549 - Kim; Song-Yi ;   et al.
2010-07-22
Variable Resistance Memory Devices And Methods Of Forming Variable Resistance Memory Devices
App 20100173479 - Joo; Heung Jin
2010-07-08
Stacked ferroelectric memory devices, methods of manufacturing the same, ferroelectric memory circuits and methods of driving the same
Grant 7,586,774 - Joo , et al. September 8, 2
2009-09-08
Semiconductor devices having a metal-insulator-metal capacitor and methods of forming the same
Grant 7,495,311 - Kim , et al. February 24, 2
2009-02-24
Node structures under capacitor in ferroelectric random access memory device and methods of forming the same
App 20080111171 - Joo; Heung-Jin ;   et al.
2008-05-15
Ferroelectric Random Access Memory And Methods Of Fabricating The Same
App 20080087926 - Park; Jung-Hoon ;   et al.
2008-04-17
Ferroelectric integrated circuit devices having an oxygen penetration path
Grant 7,348,616 - Joo , et al. March 25, 2
2008-03-25
Contact structure having conductive oxide layer, ferroelectric random access memory device employing the same and methods of fabricating the same
App 20080067566 - Choi; Do-Yeon ;   et al.
2008-03-20
Semiconductor memory device and method for forming the same
App 20080061334 - Jung; Ju-Young ;   et al.
2008-03-13
FeRAM device and method for manufacturing the same
Grant 7,294,876 - Joo , et al. November 13, 2
2007-11-13
Multiple stacked capacitors formed within an opening with thick capacitor dielectric
Grant 7,262,453 - Joo August 28, 2
2007-08-28
Stacked Ferroelectric Memory Devices, Methods Of Manufacturing The Same, Ferroelectric Memory Circuits And Methods Of Driving The Same
App 20070189056 - Joo; Heung-Jin ;   et al.
2007-08-16
Memory Devices Employing Ferroelectric Layer as Information Storage Elements and Methods of Fabricating the Same
App 20070158731 - Bae; Byoung-Jae ;   et al.
2007-07-12
Semiconductor devices having capacitors of metal-insulator-metal structure with coextensive oxidation barrier pattern and lower electrode bottom and methods of forming the same
Grant 7,144,772 - Lee , et al. December 5, 2
2006-12-05
Multiple stacked capacitors formed within an opening with thick capacitor dielectric
App 20060261396 - Joo; Heung-Jin
2006-11-23
Multiple stacked capacitors formed within an opening with thick capacitor dielectric
Grant 7,105,418 - Joo September 12, 2
2006-09-12
FeRAM device and method for manufacturing the same
App 20060157763 - Joo; Heung-Jin ;   et al.
2006-07-20
Ferroelectric memory devices with enhanced ferroelectric properties and methods for fabricating such memory devices
Grant 7,052,951 - Joo , et al. May 30, 2
2006-05-30
Ferroelectric integrated circuit devices having an oxygen penetration path and methods for manufacturing the same
App 20060108622 - Joo; Heung-jin ;   et al.
2006-05-25
Semiconductor devices having a metal-insulator-metal capacitor and methods of forming the same
App 20060006447 - Kim; Hyun-Ho ;   et al.
2006-01-12
Ferroelectric integrated circuit devices having an oxygen penetration path
Grant 6,979,881 - Joo , et al. December 27, 2
2005-12-27
Multiple stacked capacitors formed within an opening with thick capacitor dielectric
App 20050170599 - Joo, Heung-Jin
2005-08-04
Methods for forming electronic devices including capacitor structures
Grant 6,911,362 - Kim , et al. June 28, 2
2005-06-28
Ferroelectric memory devices with enhanced ferroelectric properties and methods for fabricating such memory devices
App 20040164323 - Joo, Heung-Jin ;   et al.
2004-08-26
Semiconductor devices having capacitors of metal-insulator-metal structure with coextensive oxidation barrier pattern and lower electrode bottom and methods of forming the same
App 20040108536 - Lee, Sung-Yung ;   et al.
2004-06-10
Methods for forming electronic devices including capacitor structures
App 20040042134 - Kim, Ki-Nam ;   et al.
2004-03-04
Ferroelectric integrated circuit devices having an oxygen penetration path and methods for manufacturing the same
App 20030141527 - Joo, Heung-jin ;   et al.
2003-07-31

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