loadpatents
Patent applications and USPTO patent grants for JONG; FUH-CHENG.The latest application filed is for "intelligent air purifier".
Patent | Date |
---|---|
Intelligent Air Purifier App 20180290104 - JONG; FUH-CHENG | 2018-10-11 |
Temperature power generation device and temperature power generation method Grant 7,919,709 - Jong April 5, 2 | 2011-04-05 |
Temperature Power Generation Device And Temperature Power Generation Method App 20090056783 - JONG; FUH-CHENG | 2009-03-05 |
Pillar nonvolatile memory layout methodology App 20060151841 - Jong; Fuh-cheng | 2006-07-13 |
Silicon barrier capacitor device structure Grant 7,023,038 - Jong April 4, 2 | 2006-04-04 |
Silicon barrier capacitor device structure App 20050269598 - Jong, Fuh-Cheng | 2005-12-08 |
Mask ROM Grant 6,831,851 - Jong , et al. December 14, 2 | 2004-12-14 |
Hexagonal gate structure for radiation resistant flash memory cell Grant 6,777,742 - Jong , et al. August 17, 2 | 2004-08-17 |
Nonvolatile memory cell for prevention of second bit effect Grant 6,762,467 - Jong , et al. July 13, 2 | 2004-07-13 |
Hexagonal gate structure for radiation resistant flash memory cell App 20040041197 - Jong, Fuh-Cheng ;   et al. | 2004-03-04 |
Mask ROM App 20030198074 - Jong, Fuh-Cheng ;   et al. | 2003-10-23 |
Nonvolatile memory cell for prevention from second bit effect App 20030193062 - Jong, Fuh-Cheng ;   et al. | 2003-10-16 |
EEPROM memory cell with high radiation resistance App 20030155605 - Jong, Fuh-Cheng ;   et al. | 2003-08-21 |
Twin bit cell flash memory device Grant 6,538,292 - Chang , et al. March 25, 2 | 2003-03-25 |
Method of reading two-bit memories of NROM cell Grant 6,487,114 - Jong , et al. November 26, 2 | 2002-11-26 |
Method for fabricating an ONO layer App 20020168869 - Chang, Kent Kuohua ;   et al. | 2002-11-14 |
Twin bit cell flash memory device App 20020149066 - Chang, Kent Kuohua ;   et al. | 2002-10-17 |
Method of reading two-bit memories of NROM cell App 20020118566 - Jong, Fuh-Cheng ;   et al. | 2002-08-29 |
Non-volatile flash memory cell with application of drain induced barrier lowering phenomenon App 20020074591 - Jong, Fuh-Cheng ;   et al. | 2002-06-20 |
Method for forming a nonvolatile memory with optimum bias condition Grant 6,348,381 - Jong , et al. February 19, 2 | 2002-02-19 |
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