loadpatents
name:-0.021728992462158
name:-0.020510911941528
name:-0.00058603286743164
Jones; Erin C. Patent Filings

Jones; Erin C.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Jones; Erin C..The latest application filed is for "polycrystalline sige junctions for advanced devices".

Company Profile
0.21.17
  • Jones; Erin C. - Corvallis OR
  • Jones; Erin C. - Tuckahoe NY
  • Jones, Erin C. - Tuchahoe NY
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Polycrystalline SiGe Junctions for advanced devices
Grant 7,741,165 - Chan , et al. June 22, 2
2010-06-22
Low temperature fusion bonding with high surface energy using a wet chemical treatment
Grant 7,713,837 - Chan , et al. May 11, 2
2010-05-11
Low temperature fusion bonding with high surface energy using a wet chemical treatment
Grant 7,566,631 - Chan , et al. July 28, 2
2009-07-28
Polycrystalline SiGe Junctions for Advanced Devices
App 20080248635 - Chan; Kevin Kok ;   et al.
2008-10-09
Low Temperature Fusion Bonding With High Surface Energy Using A Wet Chemical Treatment
App 20080227270 - Chan; Kevin K. ;   et al.
2008-09-18
Polycrystalline SiGe junctions for advanced devices
Grant 7,387,924 - Chan , et al. June 17, 2
2008-06-17
Method of fabricating semiconductor side wall fin
Grant 7,361,556 - Adkisson , et al. April 22, 2
2008-04-22
Method of fabricating semiconductor side wall fin
Grant 7,265,417 - Adkisson , et al. September 4, 2
2007-09-04
Method of fabricating semiconductor side wall fin
App 20070026617 - Adkisson; James W. ;   et al.
2007-02-01
SOI wafers with 30-100 .ANG. buried oxide (BOX) created by wafer bonding using 30-100 .ANG. thin oxide as bonding layer
Grant 7,166,521 - Boyd , et al. January 23, 2
2007-01-23
Method of fabricating semiconductor side wall fin
Grant 7,163,864 - Adkisson , et al. January 16, 2
2007-01-16
Polycrystalline SiGe junctions for advanced devices
App 20070010076 - Chan; Kevin Kok ;   et al.
2007-01-11
Polycrystalline SiGe junctions for advanced devices
Grant 7,135,391 - Chan , et al. November 14, 2
2006-11-14
Double gate trench transistor
Grant 7,112,845 - Adkisson , et al. September 26, 2
2006-09-26
Low temperature fusion bonding with high surface energy using a wet chemical treatment
App 20060194414 - Chan; Kevin K. ;   et al.
2006-08-31
Polycrystalline SiGe junctions for advanced devices
App 20050260832 - Chan, Kevin Kok ;   et al.
2005-11-24
SOI wafers with 30-100 A buried oxide (BOX) created by wafer bonding using 30-100 A thin oxide as bonding layer
App 20050042841 - Boyd, Diane C. ;   et al.
2005-02-24
Method of fabricating semiconductor side wall fin
App 20050001216 - Adkisson, James W. ;   et al.
2005-01-06
SOI wafers with 30-100 .ANG. buried oxide (BOX) created by wafer bonding using 30-100 .ANG. thin oxide as bonding layer
Grant 6,835,633 - Boyd , et al. December 28, 2
2004-12-28
Self-aligned planar double-gate process by amorphization
Grant 6,833,569 - Dokumaci , et al. December 21, 2
2004-12-21
Method for making multiple threshold voltage FET using multiple work-function gate materials
Grant 6,797,553 - Adkisson , et al. September 28, 2
2004-09-28
Damascene double-gate FET
Grant 6,762,101 - Chan , et al. July 13, 2
2004-07-13
Low temperature fusion bonding with high surface energy using a wet chemical treatment
App 20040126993 - Chan, Kevin K. ;   et al.
2004-07-01
Self-aligned planar double-gate process by amorphization
App 20040121549 - Dokumaci, Omer H. ;   et al.
2004-06-24
Damascene double-gate MOSFET structure and its fabrication method
Grant 6,686,630 - Hanafi , et al. February 3, 2
2004-02-03
SOI wafers with 30-100 A buried oxide (box) created by wafer bonding using 30-100 A thin oxide as bonding layer
App 20040018699 - Boyd, Diane C. ;   et al.
2004-01-29
Damascene double-gate FET
App 20030193070 - Chan, Kevin K. ;   et al.
2003-10-16
Damascene double-gate FET
Grant 6,580,132 - Chan , et al. June 17, 2
2003-06-17
Method for making multiple threshold voltage fet using multiple work-function gate materials
App 20020177279 - Adkisson, James W. ;   et al.
2002-11-28
Double gate trench transistor
Grant 6,472,258 - Adkisson , et al. October 29, 2
2002-10-29
Double gate trench transistor
App 20020140039 - Adkisson, James W. ;   et al.
2002-10-03
Multiple threshold voltage FET using multiple work-function gate materials
Grant 6,448,590 - Adkisson , et al. September 10, 2
2002-09-10
Damascene double-gate mosfet structure and its fabrication method
App 20020105039 - Hanafi, Hussein Ibrahim ;   et al.
2002-08-08
Vertical trench-formed dual-gate FET device structure and method for creation
Grant 6,406,962 - Agnello , et al. June 18, 2
2002-06-18
Two-step MOSFET gate formation for high-density devices
App 20020042183 - Chan, Kevin K. ;   et al.
2002-04-11
Method utilizing CMP to fabricate double gate MOSFETS with conductive sidewall contacts
Grant 6,339,002 - Chan , et al. January 15, 2
2002-01-15
Two-step MOSFET gate formation for high-density devices
Grant 6,333,247 - Chan , et al. December 25, 2
2001-12-25
Method for protecting refractory metal thin film requiring high temperature processing in an oxidizing atmosphere and structure formed thereby
App 20010019737 - Chan, Kevin K. ;   et al.
2001-09-06

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