Johnston, Jr.; Wilbur D.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Johnston, Jr.; Wilbur D..The latest application filed is for "method of controlling dopant incorporation in high resistivity in-based compound group iii-v epitaxial layers".

Company Profile

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Johnston, Jr.; Wilbur D. - Mendham NJ
Johnston, Jr.; Wilbur D. - Middletown NJ

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Method of controlling dopant incorporation in high resistivity In-based compound Group III-V epitaxial layers Grant 4,999,315 - Johnston, Jr. , et al. March 12, 1	1991-03-12
Method of making a semiconductor-insulator-semiconductor structure Grant 4,935,382 - Johnston, Jr. , et al. June 19, 1	1990-06-19
Semiconductor devices employing high resistivity in-based compound group III-IV epitaxial layer for current confinement Grant 4,888,624 - Johnston, Jr. , et al. * December 19, 1	1989-12-19
Method of making indium phosphide devices Grant 4,738,934 - Johnston, Jr. , et al. April 19, 1	1988-04-19
MOCVD of semi-insulating indium phosphide based compositions Grant 4,716,130 - Johnston, Jr. , et al. December 29, 1	1987-12-29
Semiconductor devices employing Fe-doped MOCVD InP-based layer for current confinement Grant 4,660,208 - Johnston, Jr. , et al. April 21, 1	1987-04-21
Transverse Mode Switching And Image Amplification In Optical Masers Grant 3,576,502 - Johnston, Jr. , et al. April 27, 1	1971-04-27

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