| Patent | Date |
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Growth of a uniformly doped silicon ingot by doping only the initial charge
Grant 10,544,517 - Johnson Ja | 2020-01-28 |
Methods for Removing a Melt of Silicon from a Crucible and Related Wick Assemblies
App 20190203378 - Johnson; Bayard K. ; et al. | 2019-07-04 |
Silicon ingot having uniform multiple dopants and method and apparatus for producing same
Grant 10,202,705 - Johnson , et al. Feb | 2019-02-12 |
Silicon single crystal doped with gallium, indium, or aluminum
Grant 9,051,659 - DeLuca , et al. June 9, 2 | 2015-06-09 |
Silicon Ingot Having Uniform Multiple Dopants And Method And Apparatus For Producing Same
App 20120301386 - Johnson; Bayard K. ; et al. | 2012-11-29 |
Growth Of A Uniformly Doped Silicon Ingot By Doping Only The Initial Charge
App 20120279437 - Johnson; Bayard K. | 2012-11-08 |
Silicon Single Crystal Doped with Gallium, Indium, or Aluminum
App 20120056135 - DeLuca; John P. ; et al. | 2012-03-08 |
Process for forming low defect density, ideal oxygen precipitating silicon
Grant 7,442,253 - Falster , et al. October 28, 2 | 2008-10-28 |
Process For Forming Low Defect Density, Ideal Oxygen Precipitating Silicon
App 20070224783 - Falster; Robert J. ; et al. | 2007-09-27 |
Low defect density, ideal oxygen precipitating silicon
Grant 7,229,693 - Falster , et al. June 12, 2 | 2007-06-12 |
Vacancy-dominated, defect-free silicon
App 20050238905 - Falster, Robert J. ; et al. | 2005-10-27 |
Low defect density, ideal oxygen precipitating silicon
App 20050170610 - Falster, Robert J. ; et al. | 2005-08-04 |
Process for producing low defect density, ideal oxygen precipitating silicon
Grant 6,896,728 - Falster , et al. May 24, 2 | 2005-05-24 |
Vacancy, dominsated, defect-free silicon
Grant 6,840,997 - Falster , et al. January 11, 2 | 2005-01-11 |
Process for producing low defect density silicon
App 20040089224 - Falster, Robert J. ; et al. | 2004-05-13 |
Process for producing low defect density, ideal oxygen precipitating silicon
App 20040025782 - Falster, Robert J. ; et al. | 2004-02-12 |
Process for suppressing the nucleation and/or growth of interstitial type defects by controlling the cooling rate through nucleation
App 20030196587 - McCallum, Kirk D. ; et al. | 2003-10-23 |
Low defect density epitaxial wafer and a process for the preparation thereof
Grant 6,632,278 - Falster , et al. October 14, 2 | 2003-10-14 |
Vacancy, dominated, defect-free silicon
App 20030051657 - Falster, Robert J. ; et al. | 2003-03-20 |
Low Defect Density Epitaxial Wafer And A Process For The Preparation Thereof
App 20020170485 - Falster, Robert J. ; et al. | 2002-11-21 |
Vacancy, dominsated, defect-free silicon
App 20020078880 - Falster, Robert J. ; et al. | 2002-06-27 |
Low defect density, self-interstitial dominated silicon
App 20010025597 - Falster, Robert J. ; et al. | 2001-10-04 |
Low defect density, ideal oxygen precipitating silicon
Grant 6,190,631 - Falster , et al. February 20, 2 | 2001-02-20 |
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