loadpatents
name:-0.93060302734375
name:-0.87109184265137
name:-0.042887926101685
Joh; Jungwoo Patent Filings

Joh; Jungwoo

Patent Applications and Registrations

Patent applications and USPTO patent grants for Joh; Jungwoo.The latest application filed is for "drain contact extension layout for hard switching robustness".

Company Profile
14.18.23
  • Joh; Jungwoo - Allen TX
  • Joh; Jungwoo - Richardson TX
  • Joh; Jungwoo - Daejeon KR
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Drain Contact Extension Layout For Hard Switching Robustness
App 20220231156 - Lee; Dong Seup ;   et al.
2022-07-21
Fring Capacitor, Integrated Circuit And Manufacturing Process For The Fringe Capacitor
App 20220208755 - Tipirneni; Naveen ;   et al.
2022-06-30
Normally-on Gallium Nitride Based Transistor With P-type Gate
App 20220173234 - Suh; Chang Soo ;   et al.
2022-06-02
Electronic Device With Enhancement Mode Gallium Nitride Transistor, And Method Of Making Same
App 20220130988 - Fareed; Qhalid RS ;   et al.
2022-04-28
HEMT having conduction barrier between drain fingertip and source
Grant 11,177,378 - Joh , et al. November 16, 2
2021-11-16
GALLIUM NITRIDE (GaN) BASED TRANSISTOR WITH MULTIPLE p-GaN BLOCKS
App 20210280702 - SUH; Chang Soo ;   et al.
2021-09-09
Strapped Copper Interconnect For Improved Electromigration Reliability
App 20210257312 - Joh; Jungwoo ;   et al.
2021-08-19
HEMT wafer probe current collapse screening
Grant 11,067,620 - Lee , et al. July 20, 2
2021-07-20
Gallium nitride (GaN) based transistor with multiple p-GaN blocks
Grant 11,049,960 - Suh , et al. June 29, 2
2021-06-29
Gallium Nitride Transistor With A Doped Region
App 20210159329 - LEE; Dong Seup ;   et al.
2021-05-27
Gallium nitride transistor with a doped region
Grant 10,964,803 - Lee , et al. March 30, 2
2021-03-30
Transistor with multiple GaN-based alloy layers
Grant 10,861,943 - Lee , et al. December 8, 2
2020-12-08
Hemt Having Conduction Barrier Between Drain Fingertip And Source
App 20200303535 - JOH; Jungwoo ;   et al.
2020-09-24
GALLIUM NITRIDE (GaN) BASED TRANSISTOR WITH MULTIPLE p-GaN BLOCKS
App 20200287033 - SUH; Chang Soo ;   et al.
2020-09-10
Group IIIA-N HEMT with a tunnel diode in the gate stack
Grant 10,707,324 - Suh , et al.
2020-07-07
Transistor With Multiple Gan-based Alloy Layers
App 20200185499 - LEE; Dong Seup ;   et al.
2020-06-11
HEMT having conduction barrier between drain fingertip and source
Grant 10,680,093 - Joh , et al.
2020-06-09
Gallium Nitride Transistor With A Doped Region
App 20200161461 - LEE; Dong Seup ;   et al.
2020-05-21
Hemt Wafer Probe Current Collapse Screening
App 20200064394 - Lee; Dong Seup ;   et al.
2020-02-27
Group Iiia-n Hemt With A Tunnel Diode In The Gate Stack
App 20190319111 - SUH; CHANG SOO ;   et al.
2019-10-17
Group IIIA-N HEMT with a tunnel diode in the gate stack
Grant 10,381,456 - Suh , et al. A
2019-08-13
Method and apparatus to model and monitor time dependent dielectric breakdown in multi-field plate gallium nitride devices
Grant 10,192,799 - Lee , et al. Ja
2019-01-29
Group Iiia-n Hemt With A Tunnel Diode In The Gate Stack
App 20180323297 - SUH; CHANG SOO ;   et al.
2018-11-08
Method And Apparatus To Model And Monitor Time Dependent Dielectric Breakdown In Multi-field Plate Gallium Nitride Devices
App 20180308773 - Lee; Dong Seup ;   et al.
2018-10-25
Method And Apparatus To Model And Monitor Time Dependent Dielectric Breakdown In Multi-field Plate Gallium Nitride Devices
App 20180190550 - Lee; Dong Seup ;   et al.
2018-07-05
Method and apparatus to model and monitor time dependent dielectric breakdown in multi-field plate gallium nitride devices
Grant 10,014,231 - Lee , et al. July 3, 2
2018-07-03
Hemt Having Conduction Barrier Between Drain Fingertip And Source
App 20180151713 - JOH; Jungwoo ;   et al.
2018-05-31
HEMT having conduction barrier between drain fingertip and source
Grant 9,882,041 - Joh , et al. January 30, 2
2018-01-30
III-nitride device and method having a gate isolating structure
Grant 9,553,151 - Pendharkar , et al. January 24, 2
2017-01-24
Apparatus and methods for qualifying HEMT FET devices
Grant 9,476,933 - Joh , et al. October 25, 2
2016-10-25
Iii-nitride Device And Method Having A Gate Isolating Structure
App 20150270357 - PENDHARKAR; Sameer ;   et al.
2015-09-24
FET dielectric reliability enhancement
Grant 9,112,011 - Haider , et al. August 18, 2
2015-08-18
Apparatus and Methods for Qualifying HEMT FET Devices
App 20150160285 - Joh; Jungwoo ;   et al.
2015-06-11
III-nitride device and method having a gate isolating structure
Grant 9,054,027 - Pendharkar , et al. June 9, 2
2015-06-09
Fet Dielectric Reliability Enhancement
App 20150060949 - HAIDER; Asad Mahmood ;   et al.
2015-03-05
FET dielectric reliability enhancement
Grant 8,916,427 - Haider , et al. December 23, 2
2014-12-23
Iii-nitride Transistor Layout
App 20140327011 - PENDHARKAR; Sameer ;   et al.
2014-11-06
Fet Dielectric Reliability Enhancement
App 20140327047 - HAIDER; Asad Mahmood ;   et al.
2014-11-06
System for recommending favorite channel/program based on TV watching pattern and method thereof
Grant 8,789,109 - Joh July 22, 2
2014-07-22
RESURF III-nitride HEMTs
Grant 8,759,879 - Tipirneni , et al. June 24, 2
2014-06-24
System For Recommending Favorite Channel/program Based On Tv Watching Pattern And Method Thereof
App 20130097624 - Joh; Jungwoo
2013-04-18

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