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Patent applications and USPTO patent grants for Jiwari; Nobuhiro.The latest application filed is for "manufacturing method for an electronic device, and the electronic device".
Patent | Date |
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Manufacturing method for an electronic device, and the electronic device Grant 7,052,624 - Matsutani , et al. May 30, 2 | 2006-05-30 |
Etching memory Grant 6,939,806 - Jiwari September 6, 2 | 2005-09-06 |
Semiconductor device and method for fabricating the same Grant 6,856,020 - Jiwari , et al. February 15, 2 | 2005-02-15 |
Method for fabricating semiconductor device Grant 6,787,445 - Jiwari , et al. September 7, 2 | 2004-09-07 |
Manufacturing method for an electronic device, and the electronic device App 20040058535 - Matsutani, Tetsuya ;   et al. | 2004-03-25 |
Semiconductor device and method for fabricating the same Grant 6,703,711 - Jiwari , et al. March 9, 2 | 2004-03-09 |
Method for fabricating semiconductor device App 20040005789 - Jiwari, Nobuhiro ;   et al. | 2004-01-08 |
Apparatus and method for fabricating semiconductor device Grant 6,669,812 - Jiwari December 30, 2 | 2003-12-30 |
Semiconductor device and method for fabricating the same App 20030094698 - Jiwari, Nobuhiro ;   et al. | 2003-05-22 |
Etching method App 20030077909 - Jiwari, Nobuhiro | 2003-04-24 |
Semiconductor device and method for fabricating the same App 20030025209 - Jiwari, Nobuhiro ;   et al. | 2003-02-06 |
Apparatus And Method For Fabricating Semiconductor Device App 20010047849 - JIWARI, NOBUHIRO ;   et al. | 2001-12-06 |
Substrate Cooling Apparatus And Semiconductor Manufacturing Apparatus App 20010008124 - JIWARI, NOBUHIRO ;   et al. | 2001-07-19 |
Apparatus and method for plasma processing Grant 6,251,216 - Okamura , et al. June 26, 2 | 2001-06-26 |
Dry etching method and semiconductor device fabrication method Grant 6,069,092 - Imai , et al. May 30, 2 | 2000-05-30 |
Method for fabricating semiconductor device and method for controlling environment inside reaction chamber of dry etching apparatus Grant 6,057,247 - Imai , et al. May 2, 2 | 2000-05-02 |
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