JIN; Miao
Patent Applications and Registrations
Patent applications and USPTO patent grants for JIN; Miao.The latest application filed is for "horizontal gate-all-around device nanowire air gap spacer formation".
- JIN; Miao - San Jose CA
| Patent | Date |
|---|---|
| Horizontal Gate-all-around Device Nanowire Air Gap Spacer Formation App 20220173220 - SUN; Shiyu ; et al. | 2022-06-02 |
| Horizontal gate all around device nanowire air gap spacer formation Grant 11,282,936 - Sun , et al. March 22, 2 | 2022-03-22 |
| Horizontal Gate All Around Device Nanowire Air Gap Spacer Formation App 20200411656 - SUN; Shiyu ; et al. | 2020-12-31 |
| Horizontal gate all around device nanowire air gap spacer formation Grant 10,777,650 - Sun , et al. Sept | 2020-09-15 |
| Horizontal Gate All Around Device Nanowire Air Gap Spacer Formation App 20170309719 - SUN; Shiyu ; et al. | 2017-10-26 |
| Selective epitaxial germanium growth on silicon-trench fill and in situ doping Grant 8,652,951 - Huang , et al. February 18, 2 | 2014-02-18 |
| Selective Epitaxial Germanium Growth On Silicon-trench Fill And In Situ Doping App 20130210221 - HUANG; YI-CHIAU ; et al. | 2013-08-15 |
| Mesoporous Carbon Material For Energy Storage App 20100203391 - Lopatin; Sergey D. ; et al. | 2010-08-12 |
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