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Methods of fabricating semiconductor devices having buried channel array Grant 9,276,074 - Choi , et al. March 1, 2 | 2016-03-01 |
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Methods Of Fabricating Semiconductor Devices Having Buried Channel Array App 20130288472 - Choi; Jay-Bok ;   et al. | 2013-10-31 |
Semiconductor device Grant 8,492,832 - Kim , et al. July 23, 2 | 2013-07-23 |
Semiconductor Device Having Capacitors App 20130161787 - KIM; Cheon-bae ;   et al. | 2013-06-27 |
Methods Of Forming Pattern Structures And Methods Of Forming Capacitors Using The Same App 20130140265 - KIM; Cheon-Bae ;   et al. | 2013-06-06 |
Semiconductor Device Having Vertical Channel Transistor And Methods Of Fabricating The Same App 20130113029 - Chung; Hyung-woo ;   et al. | 2013-05-09 |
Semiconductor Device App 20130037882 - Kim; Ji-young ;   et al. | 2013-02-14 |
Semiconductor device having vertical channel transistor and methods of fabricating the same Grant 8,362,536 - Chung , et al. January 29, 2 | 2013-01-29 |
Semiconductor Devices Including Dual Gate Electrode Structures And Related Methods App 20120299090 - Kim; Ji-Young ;   et al. | 2012-11-29 |
Semiconductor device including contact plug and associated methods Grant 8,264,022 - Yoon , et al. September 11, 2 | 2012-09-11 |
Semiconductor Device Having Vertical Channel Transistor And Methods Of Fabricating The Same App 20110284939 - Chung; Hyung-woo ;   et al. | 2011-11-24 |
Method of doping polysilicon layer that utilizes gate insulation layer to prevent diffusion of ion implanted impurities into underlying semiconductor substrate Grant 7,833,864 - Oh , et al. November 16, 2 | 2010-11-16 |
Semiconductor device including contact plug and associated methods App 20100207241 - Yoon; Jae-man ;   et al. | 2010-08-19 |
Integrated circuit devices having uniform silicide junctions Grant 7,737,512 - Jang , et al. June 15, 2 | 2010-06-15 |
Semiconductor device having shallow trench isolation structure comprising an upper trench and a lower trench including a void Grant 7,622,778 - Lee , et al. November 24, 2 | 2009-11-24 |
Semiconductor memory devices having contact pads with silicide caps thereon Grant 7,501,668 - Jang , et al. March 10, 2 | 2009-03-10 |
Semiconductor device and method of manufacturing the same Grant 7,465,988 - Lee , et al. December 16, 2 | 2008-12-16 |
Semiconductor Device And Method Of Manufacturing The Same App 20080036016 - LEE; Sung-Sam ;   et al. | 2008-02-14 |
Integrated circuit devices having uniform silicide junctions Grant 7,329,927 - Jang , et al. February 12, 2 | 2008-02-12 |
Integrated Circuit Devices Having Uniform Silicide Junctions App 20080001235 - Jang; Se-myeong ;   et al. | 2008-01-03 |
Methods of forming integrated circuit devices including a multi-layer poly film cell pad contact hole Grant 7,307,008 - Oh , et al. December 11, 2 | 2007-12-11 |
Method of manufacturing a semiconductor device having a switching function Grant 7,297,596 - Lee , et al. November 20, 2 | 2007-11-20 |
Double gate field effect transistor and method of manufacturing the same Grant 7,288,823 - Youn , et al. October 30, 2 | 2007-10-30 |
Method of manufacturing a transistor Grant 7,265,011 - Yoon , et al. September 4, 2 | 2007-09-04 |
Method Of Fabricating Transistor Of Dram Semiconductor Device App 20070190723 - OH; Yong-Chul ;   et al. | 2007-08-16 |
Method of fabricating transistor of DRAM semiconductor device Grant 7,223,649 - Oh , et al. May 29, 2 | 2007-05-29 |
Semiconductor Device And Method Of Manufacturing The Same App 20070108516 - LEE; Sung-Sam ;   et al. | 2007-05-17 |
Semiconductor memory devices having contact pads with silicide caps thereon App 20070037375 - Jang; Se-Myeong ;   et al. | 2007-02-15 |
Semiconductor memory devices having extending contact pads and related methods Grant 7,144,798 - Jang , et al. December 5, 2 | 2006-12-05 |
Semiconductor Device Having Shallow Trench Isolation Structure And Method Of Manufacturing The Same App 20060263991 - LEE; Sung-Sam ;   et al. | 2006-11-23 |
Double gate field effect transistor and method of manufacturing the same App 20060134868 - Yoon; Jae-Man ;   et al. | 2006-06-22 |
Method of forming fin field effect transistor Grant 7,056,781 - Yoon , et al. June 6, 2 | 2006-06-06 |
Double gate field effect transistor and method of manufacturing the same Grant 7,015,106 - Yoon , et al. March 21, 2 | 2006-03-21 |
Methods of fabricating integrated circuit devices having uniform silicide junctions Grant 6,974,752 - Jang , et al. December 13, 2 | 2005-12-13 |
Integrated circuit devices having uniform silicide junctions App 20050255653 - Jang, Se-myeong ;   et al. | 2005-11-17 |
Method of forming fin field effect transistor App 20050153490 - Yoon, Jae-Man ;   et al. | 2005-07-14 |
Methods for manufacturing integrated circuit devices including an isolation region defining an active region area Grant 6,875,649 - Oh , et al. April 5, 2 | 2005-04-05 |
Double gate field effect transistor and method of manufacturing the same App 20050056888 - Youn, Jae-Man ;   et al. | 2005-03-17 |
Method of manufacturing a transistor App 20050048729 - Yoon, Jae-Man ;   et al. | 2005-03-03 |
Method of fabricating transistor of DRAM semiconductor device App 20050042832 - Oh, Yong-Chul ;   et al. | 2005-02-24 |
Methods for manufacturing integrated circuit devices including an isolation region defining an active region area App 20040080019 - Oh, Yong-Chul ;   et al. | 2004-04-29 |
Integrated circuit devices including a multi-layer poly film cell pad contact hole and methods of forming the same App 20040036125 - Oh, Yong-Chul ;   et al. | 2004-02-26 |
Semiconductor memory devices having contact pads with silicide caps thereon and related methods App 20040029372 - Jang, Se-Myeong ;   et al. | 2004-02-12 |
Integrated circuits having adjacent P-type doped regions having shallow trench isolation structures without liner layers therein therebetween App 20040021197 - Oh, Yong-Chul ;   et al. | 2004-02-05 |
Integrated circuit devices including an isolation region defining an active region area and methods for manufacturing the same Grant 6,683,364 - Oh , et al. January 27, 2 | 2004-01-27 |
Methods of fabricating integrated circuit devices having uniform silicide junctions and integrated circuit devices fabricated thereby App 20030214000 - Jang, Se-Myeong ;   et al. | 2003-11-20 |
Integrated circuits having adjacent P-type doped regions having shallow trench isolation structures without liner layers therein therebetween and methods of forming same Grant 6,642,125 - Oh , et al. November 4, 2 | 2003-11-04 |
Integrated circuit devices including an isolation region defining an active region area and methods for manufacturing the same App 20030011044 - Oh, Yong-Chul ;   et al. | 2003-01-16 |
Integrated circuits having adjacent P-type doped regions having shallow trench isolation structures without liner layers therein therebetween and methods of forming same App 20020070420 - Oh, Yong-chul ;   et al. | 2002-06-13 |
Method for forming contact Grant 6,194,309 - Jin February 27, 2 | 2001-02-27 |