Patent | Date |
---|
Circuit board having bypass pad Grant 9,627,360 - Han , et al. April 18, 2 | 2017-04-18 |
Circuit Board Having Bypass Pad App 20170018535 - Han; Sang-Guk ;   et al. | 2017-01-19 |
Circuit board having bypass pad Grant 9,449,716 - Han , et al. September 20, 2 | 2016-09-20 |
Methods of forming non-volatile memory devices including vertical NAND strings Grant 9,373,633 - Jin , et al. June 21, 2 | 2016-06-21 |
Circuit board having bypass pad Grant 9,171,644 - Han , et al. October 27, 2 | 2015-10-27 |
Circuit Board Having Bypass Pad App 20150257255 - Han; Sang-Guk ;   et al. | 2015-09-10 |
Circuit Board Having Bypass Pad App 20150243371 - Han; Sang-Guk ;   et al. | 2015-08-27 |
Circuit board having bypass pad Grant 9,069,036 - Han , et al. June 30, 2 | 2015-06-30 |
Methods of Forming Non-Volatile Memory Devices Including Vertical NAND Strings App 20150140813 - Jin; Beom-jun ;   et al. | 2015-05-21 |
Methods of forming non-volatile memory devices including vertical NAND strings Grant 8,971,118 - Jin , et al. March 3, 2 | 2015-03-03 |
Circuit board having bypass pad Grant 8,917,107 - Han , et al. December 23, 2 | 2014-12-23 |
Non-volatile Memory Devices Including Vertical Nand Strings And Methods Of Forming The Same App 20140141610 - Jin; Beom-jun ;   et al. | 2014-05-22 |
Non-volatile memory devices including vertical NAND strings and methods of forming the same Grant 8,659,946 - Jin , et al. February 25, 2 | 2014-02-25 |
Non-volatile Memory Devices Including Vertical Nand Strings And Methods Of Forming The Same App 20130095653 - Jin; Beom-jun ;   et al. | 2013-04-18 |
Non-volatile memory devices including vertical NAND strings and methods of forming the same Grant 8,325,527 - Jin , et al. December 4, 2 | 2012-12-04 |
Non-volatile semiconductor memory device and method of manufacturing the same Grant 7,785,964 - Park , et al. August 31, 2 | 2010-08-31 |
Non-volatile Memory Devices Including Vertical Nand Strings And Methods Of Forming The Same App 20090310415 - Jin; Beom-jun ;   et al. | 2009-12-17 |
Non-volatile semiconductor memory device and method of manufacturing the same App 20090008699 - Park; Jin-Jun ;   et al. | 2009-01-08 |
Methods of forming different gate structures in NMOS and PMOS regions and gate structures so formed Grant 7,399,670 - Jeon , et al. July 15, 2 | 2008-07-15 |
Semiconductor device test patterns and related methods for precisely measuring leakage currents in semiconductor cell transistors Grant 7,271,408 - Kim , et al. September 18, 2 | 2007-09-18 |
Gate electrode, method of forming the same, transistor having the gate electrode, method of manufacturing the same, semiconductor device having the gate electrode and method of manufacturing the same App 20070063295 - Jeon; In-Sang ;   et al. | 2007-03-22 |
MOS semiconductor devices having polysilicon gate electrodes and high dielectric constant gate dielectric layers and methods of manufacturing such devices App 20070032008 - Kim; Hye-Min ;   et al. | 2007-02-08 |
Methods of forming capacitors of semiconductor devices including silicon-germanium and metallic electrodes Grant 7,153,750 - Chung , et al. December 26, 2 | 2006-12-26 |
Semiconductor device having a barrier layer and method of manufacturing the same App 20060151826 - Jin; Beom-Jun ;   et al. | 2006-07-13 |
Semiconductor device having transistor and method of manufacturing the same Grant 7,060,575 - Jin , et al. June 13, 2 | 2006-06-13 |
Methods of manufacturing integrated circuit devices having reduced contact resistance between a substrate and a contact pad while maintaining separation of the substrate and the contact pad and integrated circuit devices formed thereby Grant 7,009,257 - Kim , et al. March 7, 2 | 2006-03-07 |
Methods of forming different gate structures in NMOS and PMOS regions and gate structures so formed App 20060030097 - Jeon; Taek-Soo ;   et al. | 2006-02-09 |
Methods of forming a thin layer including hafnium silicon oxide using atomic layer deposition and methods of forming a gate structure and a capacitor including the same App 20060019501 - Jin; Beom-Jun ;   et al. | 2006-01-26 |
Methods of forming a thin film structure, and a gate structure and a capacitor including the thin film structure App 20060013946 - Park; Hong-Bae ;   et al. | 2006-01-19 |
Semiconductor memory device having multi-layered storage node contact plug and method for fabricating the same Grant 6,984,568 - Jin , et al. January 10, 2 | 2006-01-10 |
Methods of manufacturing integrated circuit devices having contact holes using multiple insulating layers Grant 6,897,109 - Jin , et al. May 24, 2 | 2005-05-24 |
Capacitors of semiconductor devices including silicon-germanium and metallic electrodes and methods of fabricating the same App 20040259308 - Chung, Eun-ae ;   et al. | 2004-12-23 |
Methods of forming contact holes using multiple insulating layers Grant 6,818,551 - Jin , et al. November 16, 2 | 2004-11-16 |
Methods of manufacturing integrated circuit devices having contact holes using multiple insulating layers App 20040224454 - Jin, Beom-Jun ;   et al. | 2004-11-11 |
Semiconductor device test patterns and related methods for precisely measuring leakage currents in semiconductor cell transistors App 20040188745 - Kim, Young-pil ;   et al. | 2004-09-30 |
Methods of manufacturing integrated circuit devices having reduced contact resistance between a substrate and a contact pad while maintaining separation of the substrate and the contact pad and integrated circuit devices formed thereby App 20040129981 - Kim, Young-Pil ;   et al. | 2004-07-08 |
Integrated circuit devices including low dielectric side wall spacers and methods of forming same App 20040099957 - Jin, Beom-jun | 2004-05-27 |
Semiconductor memory device having multi-layered storage node contact plug and method for fabricating the same App 20040061162 - Jin, Beom-Jun ;   et al. | 2004-04-01 |
Methods of manufacturing integrated circuit devices having reduced contact resistance between a substrate and a contact pad while maintaining separation of the substrate and the contact pad Grant 6,689,654 - Kim , et al. February 10, 2 | 2004-02-10 |
Semiconductor memory device having multilayered storage node contact plug and method for fabricating the same Grant 6,664,585 - Jin , et al. December 16, 2 | 2003-12-16 |
Semiconductor device having transistor and method of manufacturing the same App 20030197229 - Jin, Beom-jun ;   et al. | 2003-10-23 |
Semiconductor device having transistor Grant 6,576,963 - Jin , et al. June 10, 2 | 2003-06-10 |
Methods of forming contact holes using multiple insulating layers and integrated circuit devices having the same App 20030048679 - Jin, Beom-Jun ;   et al. | 2003-03-13 |
Semiconductor Device Having Transistor App 20020175385 - Jin, Beom-Jun ;   et al. | 2002-11-28 |
Semiconductor memory device having multilayered storage node contact plug and method for fabricating the same App 20020093035 - Jin, Beom-jun ;   et al. | 2002-07-18 |
Methods of manufacturing integrated circuit devices having reduced contact resistance between a substrate and a contact pad while maintaining separation of the substrate and the contact pad and integrated circuit devices formed thereby App 20020090786 - Kim, Young-Pil ;   et al. | 2002-07-11 |