Patent | Date |
---|
Two-dimensional condensation for uniaxially strained semiconductor fins Grant 10,304,929 - Kavalieros , et al. | 2019-05-28 |
Extreme high mobility CMOS logic Grant 10,141,437 - Datta , et al. Nov | 2018-11-27 |
Germanium-based quantum well devices Grant 9,876,014 - Pillarisetty , et al. January 23, 2 | 2018-01-23 |
Two-dimensional Condensation For Uniaxially Strained Semiconductor Fins App 20170317172 - KAVALIEROS; Jack T. ;   et al. | 2017-11-02 |
Extreme High Mobility Cmos Logic App 20170309734 - DATTA; Suman ;   et al. | 2017-10-26 |
Two-dimensional condensation for uniaxially strained semiconductor fins Grant 9,711,598 - Kavalieros , et al. July 18, 2 | 2017-07-18 |
Extreme high mobility CMOS logic Grant 9,691,856 - Datta , et al. June 27, 2 | 2017-06-27 |
Extreme high mobility CMOS logic Grant 9,548,363 - Datta , et al. January 17, 2 | 2017-01-17 |
Germanium-based Quantum Well Devices App 20170012116 - Pillarisetty; Ravi ;   et al. | 2017-01-12 |
Two-dimensional Condensation For Uniaxially Strained Semiconductor Fins App 20160329403 - Kavalieros; Jack T. ;   et al. | 2016-11-10 |
Germanium-based quantum well devices Grant 9,478,635 - Pillarisetty , et al. October 25, 2 | 2016-10-25 |
Strain inducing semiconductor regions Grant 9,425,256 - Datta , et al. August 23, 2 | 2016-08-23 |
Two-dimensional condensation for uniaxially strained semiconductor fins Grant 9,419,140 - Kavalieros , et al. August 16, 2 | 2016-08-16 |
Silicon germanium and germanium multigate and nanowire structures for logic and multilevel memory applications Grant 9,343,302 - Jin , et al. May 17, 2 | 2016-05-17 |
Extreme High Mobility Cmos Logic App 20160111423 - Datta; Suman ;   et al. | 2016-04-21 |
Two-dimensional Condensation For Uniaxially Strained Semiconductor Fins App 20160049513 - Kavalieros; Jack T. ;   et al. | 2016-02-18 |
Techniques for forming non-planar germanium quantum well devices Grant 9,263,557 - Pillarisetty , et al. February 16, 2 | 2016-02-16 |
Two-dimensional condensation for uniaxially strained semiconductor fins Grant 9,159,835 - Kavalieros , et al. October 13, 2 | 2015-10-13 |
Apparatus and methods for improving parallel conduction in a quantum well device Grant 9,048,266 - Pillarisetty , et al. June 2, 2 | 2015-06-02 |
Silicon Germanium And Germanium Multigate And Nanowire Structures For Logic And Multilevel Memory Applications App 20150099349 - Jin; Been-Yih ;   et al. | 2015-04-09 |
Isolation for nanowire devices Grant 8,883,573 - Shah , et al. November 11, 2 | 2014-11-11 |
Extreme High Mobility Cmos Logic App 20140291615 - Datta; Suman ;   et al. | 2014-10-02 |
Strain-inducing semiconductor regions Grant 8,841,180 - Datta , et al. September 23, 2 | 2014-09-23 |
Extreme high mobility CMOS logic Grant 8,802,517 - Datta , et al. August 12, 2 | 2014-08-12 |
Silicon Germanium And Germanium Multigate And Nanowire Structures For Logic And Multilevel Memory Applications App 20140170817 - Jin; Been-Yih ;   et al. | 2014-06-19 |
Strain-inducing Semiconductor Regions App 20140103396 - Datta; Suman ;   et al. | 2014-04-17 |
Techniques For Forming Non-planar Germanium Quantum Well Devices App 20140054548 - Pillarisetty; Ravi ;   et al. | 2014-02-27 |
Strain-inducing Semiconductor Regions App 20130344668 - Datta; Suman ;   et al. | 2013-12-26 |
Extreme High Mobility Cmos Logic App 20130328015 - Datta; Suman ;   et al. | 2013-12-12 |
Apparatus And Methods For Improving Parallel Conduction In A Quantum Well Device App 20130313520 - Pillarisetty; Ravi ;   et al. | 2013-11-28 |
Strain inducing semiconductor regions Grant 8,530,884 - Datta , et al. September 10, 2 | 2013-09-10 |
Apparatus and methods for improving parallel conduction in a quantum well device Grant 8,525,151 - Pillarisetty , et al. September 3, 2 | 2013-09-03 |
Method of isolating nanowires from a substrate Grant 8,525,162 - Chu-Kung , et al. September 3, 2 | 2013-09-03 |
Extreme high mobility CMOS logic Grant 8,518,768 - Datta , et al. August 27, 2 | 2013-08-27 |
Strain-inducing semiconductor regions Grant 8,421,059 - Datta , et al. April 16, 2 | 2013-04-16 |
Tri-gate transistor device with stress incorporation layer and method of fabrication Grant 8,405,164 - Hareland , et al. March 26, 2 | 2013-03-26 |
Method Of Isolating Nanowires From A Substrate App 20130062594 - Chu-Kung; Benjamin ;   et al. | 2013-03-14 |
Methods of forming nanodots using spacer patterning techniques and structures formed thereby Grant 8,388,854 - Doyle , et al. March 5, 2 | 2013-03-05 |
Apparatus And Methods For Improving Parallel Conduction In A Quantum Well Device App 20120326123 - PILLARISETTY; RAVI ;   et al. | 2012-12-27 |
Isolation For Nanowire Devices App 20120309173 - Shah; Uday ;   et al. | 2012-12-06 |
CMOS devices with a single work function gate electrode and method of fabrication Grant 8,294,180 - Doyle , et al. October 23, 2 | 2012-10-23 |
Method to introduce uniaxial strain in multigate nanoscale transistors by self aligned SI to SIGE conversion processes and structures formed thereby Grant 8,288,233 - Jin , et al. October 16, 2 | 2012-10-16 |
Two-dimensional Condensation For Uniaxially Strained Semiconductor Fins App 20120241818 - Kavalieros; Jack T. ;   et al. | 2012-09-27 |
Mechanism for forming a remote delta doping layer of a quantum well structure Grant 8,264,004 - Jin , et al. September 11, 2 | 2012-09-11 |
Apparatus and methods for improving parallel conduction in a quantum well device Grant 8,242,001 - Pillarisetty , et al. August 14, 2 | 2012-08-14 |
Extreme High Mobility Cmos Logic App 20120199813 - Datta; Suman ;   et al. | 2012-08-09 |
Transistor gate electrode having conductor material layer Grant 8,237,234 - Murthy , et al. August 7, 2 | 2012-08-07 |
Two-dimensional condensation for uniaxially strained semiconductor fins Grant 8,211,772 - Kavalieros , et al. July 3, 2 | 2012-07-03 |
Germanium-based quantum well devices Grant 8,193,523 - Pillarisetty , et al. June 5, 2 | 2012-06-05 |
Extreme high mobility CMOS logic Grant 8,183,556 - May 22, 2 | 2012-05-22 |
Semiconductor on insulator Grant 8,173,495 - Jin , et al. May 8, 2 | 2012-05-08 |
Method of isolating nanowires from a substrate Grant 8,168,508 - Chu-Kung , et al. May 1, 2 | 2012-05-01 |
Substrate band gap engineered multi-gate pMOS devices Grant 8,169,027 - Doyle , et al. May 1, 2 | 2012-05-01 |
Strain-inducing Semiconductor Regions App 20120061649 - Datta; Suman ;   et al. | 2012-03-15 |
Tensile strained NMOS transistor using group III-N source/drain regions Grant 8,120,065 - Datta , et al. February 21, 2 | 2012-02-21 |
Fabrication of germanium nanowire transistors Grant 8,110,458 - Jin , et al. February 7, 2 | 2012-02-07 |
Apparatus and methods for improving parallel conduction in a quantum well device Grant 8,080,820 - Pillarisetty , et al. December 20, 2 | 2011-12-20 |
Transistor Gate Electrode Having Conductor Material Layer App 20110186912 - Murthy; Anand ;   et al. | 2011-08-04 |
Cmos Devices With A Single Work Function Gate Electrode And Method Of Fabrication App 20110180851 - Doyle; Brian S. ;   et al. | 2011-07-28 |
Germanium-based quantum well devices App 20110156005 - Pillarisetty; Ravi ;   et al. | 2011-06-30 |
Transistor gate electrode having conductor material layer Grant 7,968,957 - Murthy , et al. June 28, 2 | 2011-06-28 |
Two-dimensional Condensation For Uniaxially Strained Semiconductor Fins App 20110147811 - Kavalieros; Jack T. ;   et al. | 2011-06-23 |
Isolation for nanowire devices App 20110147697 - Shah; Uday ;   et al. | 2011-06-23 |
Techniques For Forming Shallow Trench Isolation App 20110140229 - Rachmady; Willy ;   et al. | 2011-06-16 |
Non-planar pMOS structure with a strained channel region and an integrated strained CMOS flow Grant 7,960,794 - Doyle , et al. June 14, 2 | 2011-06-14 |
Dual seed semiconductor photodetectors Grant 7,948,010 - Reshotko , et al. May 24, 2 | 2011-05-24 |
CMOS devices with a single work function gate electrode and method of fabrication Grant 7,902,014 - Doyle , et al. March 8, 2 | 2011-03-08 |
Semiconductor on Insulator App 20110039377 - Jin; Been-Yih ;   et al. | 2011-02-17 |
Tunneling field effect transistor using angled implants for forming asymmetric source/drain regions Grant 7,888,221 - Kavalieros , et al. February 15, 2 | 2011-02-15 |
Germanium on insulator (GOI) semiconductor substrates Grant 7,884,354 - Pillarisetty , et al. February 8, 2 | 2011-02-08 |
Strain-inducing Semiconductor Regions App 20110017978 - Datta; Suman ;   et al. | 2011-01-27 |
Transistor Gate Electrode Having Conductor Material Layer App 20110018031 - Murthy; Anand ;   et al. | 2011-01-27 |
Semiconductor on insulator apparatus Grant 7,875,932 - Jin , et al. January 25, 2 | 2011-01-25 |
Transistor gate electrode having conductor material layer Grant 7,871,916 - Murthy , et al. January 18, 2 | 2011-01-18 |
Silicon Germanium And Germanium Multigate And Nanowire Structures For Logic And Multilevel Memory Applications App 20110008937 - Jin; Been-Yih ;   et al. | 2011-01-13 |
Isolated Germanium nanowire on Silicon fin Grant 7,851,790 - Rachmady , et al. December 14, 2 | 2010-12-14 |
Methods Of Forming Nanodots Using Spacer Patterning Techniques And Structures Formed Thereby App 20100285279 - Doyle; Brian ;   et al. | 2010-11-11 |
Strain-inducing semiconductor regions Grant 7,825,400 - Datta , et al. November 2, 2 | 2010-11-02 |
Silicon germanium and germanium multigate and nanowire structures for logic and multilevel memory applications Grant 7,821,061 - Jin , et al. October 26, 2 | 2010-10-26 |
Apparatus and methods for improving parallel conduction in a quantum well device App 20100230658 - Pillarisetty; Ravi ;   et al. | 2010-09-16 |
Mechanism for Forming a Remote Delta Doping Layer of a Quantum Well Structure App 20100219396 - Jin; Been-Yih ;   et al. | 2010-09-02 |
Nonplanar Device With Stress Incorporation Layer And Method Of Fabrication App 20100200917 - Hareland; Scott A. ;   et al. | 2010-08-12 |
Fabrication Of Germanium Nanowire Transistors App 20100200835 - Jin; Been-Yih ;   et al. | 2010-08-12 |
Substrate Band Gap Engineered Multi-gate Pmos Devices App 20100193840 - Doyle; Brian S. ;   et al. | 2010-08-05 |
Three dimensional strained quantum wells and three dimensional strained surface channels by Ge confinement method Grant 7,767,560 - Jin , et al. August 3, 2 | 2010-08-03 |
Method Of Isolating Nanowires From A Substrate App 20100163838 - Chu-Kung; Benjamin ;   et al. | 2010-07-01 |
Tri-gate patterning using dual layer gate stack Grant 7,745,270 - Shah , et al. June 29, 2 | 2010-06-29 |
Formation of a multiple crystal orientation substrate App 20100155788 - Shaheen; Mohamad A. ;   et al. | 2010-06-24 |
Fabrication of germanium nanowire transistors Grant 7,727,830 - Jin , et al. June 1, 2 | 2010-06-01 |
Tri-gate transistor device with stress incorporation layer and method of fabrication Grant 7,714,397 - Hareland , et al. May 11, 2 | 2010-05-11 |
Mechanism for forming a remote delta doping layer of a quantum well structure Grant 7,713,803 - Jin , et al. May 11, 2 | 2010-05-11 |
Methods for inducing strain in non-planar transistor structures Grant 7,709,312 - Jin , et al. May 4, 2 | 2010-05-04 |
Semiconductor on insulator apparatus Grant 7,671,414 - Jin , et al. March 2, 2 | 2010-03-02 |
Semiconductor on Insulator Apparatus App 20100038717 - Jin; Been-Yih ;   et al. | 2010-02-18 |
Germanium On Insulator (goi) Semiconductor Substrates App 20100025822 - Pillarisetty; Ravi ;   et al. | 2010-02-04 |
Transistor gate electrode having conductor material layer Grant 7,642,610 - Murthy , et al. January 5, 2 | 2010-01-05 |
Faceted catalytic dots for directed nanotube growth Grant 7,638,383 - Jin , et al. December 29, 2 | 2009-12-29 |
Transistor Gate Electrode Having Conductor Material Layer App 20090315076 - Murthy; Anand ;   et al. | 2009-12-24 |
Tensile Strained NMOS Transistor Using Group III-N Source/Drain Regions App 20090302350 - Datta; Suman ;   et al. | 2009-12-10 |
Faceted Catalytic Dots For Directed Nanotube Growth App 20090289245 - Jin; Been-Yih ;   et al. | 2009-11-26 |
Dual Seed Semiconductor Photodetectors App 20090243023 - Reshotko; Miriam ;   et al. | 2009-10-01 |
Tensile strained NMOS transistor using group III-N source/drain regions Grant 7,592,213 - Datta , et al. September 22, 2 | 2009-09-22 |
Transistor having tensile strained channel and system including same Grant 7,569,869 - Jin , et al. August 4, 2 | 2009-08-04 |
Tri-gate patterning using dual layer gate stack App 20090170267 - Shah; Uday ;   et al. | 2009-07-02 |
Fabrication of germanium nanowire transistors App 20090170251 - Jin; Been-Yih ;   et al. | 2009-07-02 |
Dual seed semiconductor photodetectors Grant 7,553,687 - Reshotko , et al. June 30, 2 | 2009-06-30 |
Non-planar MOS structure with a strained channel region Grant 7,531,393 - Doyle , et al. May 12, 2 | 2009-05-12 |
Protection of three dimensional transistor structures during gate stack etch Grant 7,521,775 - Doyle , et al. April 21, 2 | 2009-04-21 |
Method To Introduce Uniaxial Strain In Multigate Nanoscale Transistors By Self Aligned Si To Sige Conversion Processes And Structures Formed Thereby App 20090085062 - Jin; Been-Yih ;   et al. | 2009-04-02 |
Three Dimensional Strained Quantum Wells And Three Dimensional Strained Surface Channels By Ge Confinement Method App 20090085027 - Jin; Been-Yih ;   et al. | 2009-04-02 |
Method To Fabricate Adjacent Silicon Fins Of Differing Heights App 20090057846 - Doyle; Brian S. ;   et al. | 2009-03-05 |
Abrupt junction formation by atomic layer epitaxy of in situ delta doped dopant diffusion barriers Grant 7,485,536 - Jin , et al. February 3, 2 | 2009-02-03 |
Three dimensional quantum dot array App 20090001441 - Jin; Been-Yih ;   et al. | 2009-01-01 |
Tunneling field effect transistor using angled implants for forming asymmetric source/drain regions App 20080318385 - Kavalieros; Jack T. ;   et al. | 2008-12-25 |
Semiconductor On Insulator Apparatus App 20080303116 - Jin; Been-Yih ;   et al. | 2008-12-11 |
Transistor having tensile strained channel and system including same App 20080237636 - Jin; Been-Yih ;   et al. | 2008-10-02 |
Mechanism for forming a remote delta doping layer of a quantum well structure App 20080237573 - Jin; Been-Yih ;   et al. | 2008-10-02 |
Silicon germanium and germanium multigate and nanowire structures for logic and multilevel memory applications App 20080237575 - Jin; Been-Yih ;   et al. | 2008-10-02 |
Semiconductor on insulator apparatus and method Grant 7,427,538 - Jin , et al. September 23, 2 | 2008-09-23 |
Non-planar pMOS structure with a strained channel region and an integrated strained CMOS flow App 20080169512 - Doyle; Brian S. ;   et al. | 2008-07-17 |
Strain-inducing semiconductor regions App 20080142785 - Datta; Suman ;   et al. | 2008-06-19 |
Methods for inducing strain in non-planar transistor structures App 20080079094 - Jin; Been-Yih ;   et al. | 2008-04-03 |
Non-planar pMOS structure with a strained channel region and an integrated strained CMOS flow Grant 7,348,284 - Doyle , et al. March 25, 2 | 2008-03-25 |
Dual seed semiconductor photodetectors App 20080014669 - Reshotko; Miriam ;   et al. | 2008-01-17 |
Protection of three dimensional transistor structures during gate stack etch App 20070287255 - Doyle; Brian S. ;   et al. | 2007-12-13 |
Tri-gate Transistors And Methods To Fabricate Same App 20070262389 - Chau; Robert ;   et al. | 2007-11-15 |
Substrate band gap engineered multi-gate pMOS devices App 20070235763 - Doyle; Brian S. ;   et al. | 2007-10-11 |
Formation of a multiple crystal orientation substrate App 20070215984 - Shaheen; Mohamad A. ;   et al. | 2007-09-20 |
Tri-gate transistors and methods to fabricate same Grant 7,268,058 - Chau , et al. September 11, 2 | 2007-09-11 |
Transistor gate electrode having conductor material layer App 20070170464 - Murthy; Anand ;   et al. | 2007-07-26 |
Nonplanar device with stress incorporation layer and method of fabrication Grant 7,241,653 - Hareland , et al. July 10, 2 | 2007-07-10 |
Tensile strained NMOS transistor using group III-N source/drain regions App 20070155063 - Datta; Suman ;   et al. | 2007-07-05 |
Abrupt junction formation by atomic layer epitaxy of in situ delta doped dopant diffusion barriers App 20070155142 - Jin; Been-Yih ;   et al. | 2007-07-05 |
Quantum dot nonvolatile transistor App 20070145468 - Majumdar; Amlan ;   et al. | 2007-06-28 |
Semiconductor channel on insulator structure Grant 7,235,809 - Jin , et al. June 26, 2 | 2007-06-26 |
Extreme high mobility CMOS logic App 20070138565 - Datta; Suman ;   et al. | 2007-06-21 |
Transistor gate electrode having conductor material layer Grant 7,223,679 - Murthy , et al. May 29, 2 | 2007-05-29 |
CMOS devices with a single work function gate electrode and method of fabrication App 20070090416 - Doyle; Brian S. ;   et al. | 2007-04-26 |
Narrow-body multiple-gate FET with dominant body transistor for high performance App 20070090408 - Majumdar; Amlan ;   et al. | 2007-04-26 |
Method of fabricating CMOS devices having a single work function gate electrode by band gap engineering and article made thereby App 20070069302 - Jin; Been-Yih ;   et al. | 2007-03-29 |
Non-planar MOS structure with a strained channel region Grant 7,193,279 - Doyle , et al. March 20, 2 | 2007-03-20 |
Field effect transistor and method of fabrication Grant 7,180,109 - Chau , et al. February 20, 2 | 2007-02-20 |
Field effect transistor and method of fabrication Grant 7,176,075 - Chau , et al. February 13, 2 | 2007-02-13 |
Strained field effect transistors App 20060292776 - Jin; Been-Yih ;   et al. | 2006-12-28 |
Nonplanar device with stress incorporation layer and method of fabrication App 20060261411 - Hareland; Scott A. ;   et al. | 2006-11-23 |
Semiconductor channel on insulator structure Grant 7,138,316 - Jin , et al. November 21, 2 | 2006-11-21 |
Tunneling field effect transistor using angled implants for forming asymmetric source/drain regions App 20060258072 - Kavalieros; Jack T. ;   et al. | 2006-11-16 |
Non-planar MOS structure with a strained channel region App 20060157687 - Doyle; Brian S. ;   et al. | 2006-07-20 |
Non-planar MOS structure with a strained channel region App 20060157794 - Doyle; Brian S. ;   et al. | 2006-07-20 |
Semiconductor channel on insulator structure App 20060081932 - Jin; Been-Yih ;   et al. | 2006-04-20 |
Non-planar pMOS structure with a strained channel region and an integrated strained CMOS flow App 20060033095 - Doyle; Brian S. ;   et al. | 2006-02-16 |
Nonplanar device with stress incorporation layer and method of fabrication App 20050242406 - Hareland, Scott A. ;   et al. | 2005-11-03 |
Strained silicon with reduced roughness App 20050211982 - Lei, Ryan ;   et al. | 2005-09-29 |
Tri-gate transistors and methods to fabricate same App 20050158970 - Chau, Robert ;   et al. | 2005-07-21 |
Transistor gate electrode having conductor material layer App 20050145944 - Murthy, Anand ;   et al. | 2005-07-07 |
Novel field effect transistor and method of fabrication App 20050133866 - Chau, Robert S. ;   et al. | 2005-06-23 |
Nonplanar device with stress incorporation layer and method of fabrication Grant 6,909,151 - Hareland , et al. June 21, 2 | 2005-06-21 |
Non-silicon semiconductor and high-k gate dielectric metal oxide semiconductor field effect transistors App 20050124125 - Jin, Been-Yih ;   et al. | 2005-06-09 |
Non-silicon semiconductor and high-k gate dielectric metal oxide semiconductor field effect transistors Grant 6,900,481 - Jin , et al. May 31, 2 | 2005-05-31 |
Semiconductor channel on insulator structure App 20050064616 - Jin, Been-Yih ;   et al. | 2005-03-24 |
Novel field effect transistor and method of fabrication App 20050017275 - Chau, Robert S. ;   et al. | 2005-01-27 |
Nonplanar device with stress incorporation layer and method of fabrication App 20040262692 - Hareland, Scott A. ;   et al. | 2004-12-30 |
Field effect transistor and method of fabrication Grant 6,825,506 - Chau , et al. November 30, 2 | 2004-11-30 |
Novel field effect transistor and method of fabrication App 20040113210 - Chau, Robert S. ;   et al. | 2004-06-17 |
Novel field effect transistor and method of fabrication App 20040099966 - Chau, Robert S. ;   et al. | 2004-05-27 |
Semiconductor on insulator apparatus and method App 20040031990 - Jin, Been-Yih ;   et al. | 2004-02-19 |
Non-silicon semiconductor and high-k gate dielectric metal oxide semiconductor field effect transistors App 20020168826 - Jin, Been-Yih ;   et al. | 2002-11-14 |
Integrated circuit passivation process and structure Grant 5,883,001 - Jin , et al. March 16, 1 | 1999-03-16 |
Spin-on-glass process with controlled environment Grant 5,716,673 - Yen , et al. February 10, 1 | 1998-02-10 |