Jiang; Qing Tang

Patent Applications and Registrations

Patent applications and USPTO patent grants for Jiang; Qing Tang.The latest application filed is for "method and structure for copper gap fill plating of interconnect structures for semiconductor integrated circuits".

Company Profile

0.10.12

Jiang; Qing Tang - Shanghai CN
Jiang; Qing-Tang - Austin TX

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Method and structure for copper gap fill plating of interconnect structures for semiconductor integrated circuits Grant 8,242,017 - Xiang , et al. August 14, 2	2012-08-14
In-situ co-deposition of Si in diffusion barrier material depositions with improved wettability, barrier efficiency, and device reliability Grant 7,655,555 - Faust , et al. February 2, 2	2010-02-02
Method And Structure For Copper Gap Fill Plating Of Interconnect Structures For Semiconductor Integrated Circuits App 20090227103 - Xiang; Yang Hui ; et al.	2009-09-10
Semiconductor device with a conductive layer including a copper layer with a dopant Grant 7,187,080 - Jiang , et al. March 6, 2	2007-03-06
Method and apparatus for improving adhesion between layers in integrated devices Grant 6,958,290 - Faust, Jr. , et al. October 25, 2	2005-10-25
Copper transition layer for improving copper interconnection reliability Grant 6,951,812 - Jiang , et al. October 4, 2	2005-10-04
Semiconductor devices and methods of manufacturing such semiconductor devices Grant 6,911,394 - Jiang , et al. June 28, 2	2005-06-28
Semiconductor devices and methods of manufacturing such semiconductor devices App 20050048784 - Jiang, Qing-Tang ; et al.	2005-03-03
Method for improved cu electroplating in integrated circuit fabrication Grant 6,784,104 - Jiang , et al. August 31, 2	2004-08-31
Copper transition layer for improving copper interconnection reliability App 20040132282 - Jiang, Qing-Tang ; et al.	2004-07-08
Copper transition layer for improving copper interconnection reliability Grant 6,693,356 - Jiang , et al. February 17, 2	2004-02-17
Method and apparatus for improving adhesion between layers in integrated devices App 20030207562 - Faust, Richard A. JR. ; et al.	2003-11-06
Copper transition layer for improving copper interconnection reliability App 20030186543 - Jiang, Qing-Tang ; et al.	2003-10-02
Semiconductor devices and methods of manufacturing such semiconductor devices App 20030160332 - Jiang, Qing-Tang ; et al.	2003-08-28
Reducing copper line resistivity by smoothing trench and via sidewalls Grant 6,586,334 - Jiang July 1, 2	2003-07-01
Method of fabricating interlevel connectors using only one photomask step Grant 6,548,400 - Brennan , et al. April 15, 2	2003-04-15
Method for improved cu electroplating in integrated circuit fabrication App 20030022493 - Jiang, Qing-Tang ; et al.	2003-01-30
Method of fabricating interlevel connectors using only one photomask step App 20030001272 - Brennan, Kenneth D. ; et al.	2003-01-02
Method for sealing via sidewalls in porous low-k dielectric layers App 20020177303 - Jiang, Qing-Tang ; et al.	2002-11-28
Reducing copper line resistivity by smoothing trench and via sidewalls App 20020055256 - Jiang, Qing-Tang	2002-05-09
Metal barrier for copper interconnects that incorporates silicon in the metal barrier or at the copper/metal barrier interface App 20020009880 - Jiang, Qing-Tang ; et al.	2002-01-24
In-situ co-deposition of Si iN diffusion barrier material depositions with improved wettability, barrier efficiency, and device reliability App 20020001944 - Faust, Richard A. ; et al.	2002-01-03

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